3-D Simulation of Nanoscale SOI n-FinFET at a Gate Length of 8 nm Using ATLAS SILVACO Article Swipe
Nour El I. Boukortt
,
Baghdad Hadri
,
Alina Caddemi
,
Giovanni Crupi
,
Salvatore Patanè
·
YOU?
·
· 2015
· Open Access
·
· DOI: https://doi.org/10.4313/teem.2015.16.3.156
YOU?
·
· 2015
· Open Access
·
· DOI: https://doi.org/10.4313/teem.2015.16.3.156
In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects of variations of the device’s key electrical parameters, such as threshold voltage, subthreshold slope, transconductance, drain induced barrier lowering, oncurrent, leakage current and on/off current ratio are presented and analyzed. We will also describe some simulation results related to the influence of the gate work function variations on the considered structure. These variations have a direct impact on the electrical device characteristics. The results show that the threshold voltage decreases when we reduce the gate metal work function Φm. As a consequence, the behavior of the leakage current improves with increased Φm. Therefore, the short channel effects in real 3-D FinFET structures can reasonably be controlled and improved by proper adjustment of the gate metal work function.
Related Topics
Concepts
Materials science
Transconductance
Threshold voltage
Subthreshold slope
Metal gate
Drain-induced barrier lowering
Optoelectronics
Silicon on insulator
Work function
Leakage (economics)
Nanoscopic scale
Short-channel effect
Subthreshold conduction
Silicon
Voltage
MOSFET
Transistor
Metal
Electrical engineering
Nanotechnology
Gate oxide
Engineering
Metallurgy
Economics
Macroeconomics
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.4313/teem.2015.16.3.156
- http://koreascience.or.kr:80/article/JAKO201525961593891.pdf
- OA Status
- bronze
- Cited By
- 21
- References
- 8
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2294745921
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W2294745921Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.4313/teem.2015.16.3.156Digital Object Identifier
- Title
-
3-D Simulation of Nanoscale SOI n-FinFET at a Gate Length of 8 nm Using ATLAS SILVACOWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2015Year of publication
- Publication date
-
2015-06-25Full publication date if available
- Authors
-
Nour El I. Boukortt, Baghdad Hadri, Alina Caddemi, Giovanni Crupi, Salvatore PatanèList of authors in order
- Landing page
-
https://doi.org/10.4313/teem.2015.16.3.156Publisher landing page
- PDF URL
-
https://koreascience.or.kr:80/article/JAKO201525961593891.pdfDirect link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
bronzeOpen access status per OpenAlex
- OA URL
-
https://koreascience.or.kr:80/article/JAKO201525961593891.pdfDirect OA link when available
- Concepts
-
Materials science, Transconductance, Threshold voltage, Subthreshold slope, Metal gate, Drain-induced barrier lowering, Optoelectronics, Silicon on insulator, Work function, Leakage (economics), Nanoscopic scale, Short-channel effect, Subthreshold conduction, Silicon, Voltage, MOSFET, Transistor, Metal, Electrical engineering, Nanotechnology, Gate oxide, Engineering, Metallurgy, Economics, MacroeconomicsTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
21Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 4, 2024: 2, 2023: 4, 2022: 2, 2021: 6Per-year citation counts (last 5 years)
- References (count)
-
8Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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