A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application Perspectives Article Swipe
Susmita Mistri
,
Catherine Langpoklakpam
,
Surya Elangovan
,
Hao‐Chung Kuo
·
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.3390/electronics14224430
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.3390/electronics14224430
This review examines recent advances in Gallium Nitride (GaN) power semiconductor devices and their growing impact on the development of high-efficiency power conversion systems. It explores innovations in device design, packaging methods, and gate-driving strategies that have improved both performance and reliability. Key metrics such as switching speed, conduction losses, thermal management, and device robustness are analyzed, supported by reliability assessment techniques including Double-Pulse Testing (DPT). The discussion extends to current market dynamics and strategic industry initiatives that have catalyzed widespread GaN adoption. These combined insights highlight GaN’s role as a transformative material offering compact, efficient, and durable power solutions while identifying challenges that remain for broader implementation across diverse industries.
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A Comprehensive Study on GaN Power Devices: Reliability, Performance, and Application PerspectivesWork title
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2025Year of publication
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2025-11-13Full publication date if available
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Susmita Mistri, Catherine Langpoklakpam, Surya Elangovan, Hao‐Chung KuoList of authors in order
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https://doi.org/10.3390/electronics14224430Publisher landing page
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https://www.mdpi.com/2079-9292/14/22/4430/pdf?version=1763125101Direct link to full text PDF
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goldOpen access status per OpenAlex
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0Total citation count in OpenAlex
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111Number of works referenced by this work
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