A JL-SDR-IMPATT Device with Improved Efficiency Article Swipe
Dipan Bandyopadhyay
,
Subir Kumar Sarkar
·
YOU?
·
· 2017
· Open Access
·
· DOI: https://doi.org/10.1590/2179-10742017v16i2682
YOU?
·
· 2017
· Open Access
·
· DOI: https://doi.org/10.1590/2179-10742017v16i2682
An attempt has been made to present a new device which will function as a highly efficient SDR (Single Drift Region) P+-N- N+ IMPATT diode utilizing the advantages of a junctionless field effect transistor. The basic idea is to convert a uniform N+ region into a (P+-N-N+) structure without any requirement of physical doping. As the present device works on the principle of a junctionless channel, variability and short channel effects are significantly reduced as compared to the conventional TFET though the requirement of an extra gate increases a few fabrication steps. Further, efficiency more than conventional SDR IMPATT diode is achievable without any physical doping.
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Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1590/2179-10742017v16i2682
- http://www.scielo.br/pdf/jmoea/v16n2/2179-1074-jmoea-16-02-0323.pdf
- OA Status
- diamond
- Cited By
- 1
- References
- 24
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2609044143
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W2609044143Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1590/2179-10742017v16i2682Digital Object Identifier
- Title
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A JL-SDR-IMPATT Device with Improved EfficiencyWork title
- Type
-
articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2017Year of publication
- Publication date
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2017-04-01Full publication date if available
- Authors
-
Dipan Bandyopadhyay, Subir Kumar SarkarList of authors in order
- Landing page
-
https://doi.org/10.1590/2179-10742017v16i2682Publisher landing page
- PDF URL
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https://www.scielo.br/pdf/jmoea/v16n2/2179-1074-jmoea-16-02-0323.pdfDirect link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
-
diamondOpen access status per OpenAlex
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https://www.scielo.br/pdf/jmoea/v16n2/2179-1074-jmoea-16-02-0323.pdfDirect OA link when available
- Concepts
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IMPATT diode, Doping, Diode, Optoelectronics, Fabrication, Channel (broadcasting), Transistor, Electrical engineering, Materials science, Field-effect transistor, Computer science, Electronic engineering, Physics, Engineering, Voltage, Medicine, Alternative medicine, PathologyTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
1Total citation count in OpenAlex
- Citations by year (recent)
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2021: 1Per-year citation counts (last 5 years)
- References (count)
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24Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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