A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital Converter Article Swipe
Vinod Kurian Jacob
,
Jiyue Yang
,
Haoran He
,
Puneet Gupta
,
Kang L. Wang
,
Sudhakar Pamarti
·
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1109/jxcdc.2023.3258431
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.1109/jxcdc.2023.3258431
Compute-in-memory (CIM) accelerator has become a popular solution to achieve high energy efficiency for deep learning applications in edge devices. Recent works have demonstrated CIM macros using nonvolatile memories [spin transfer torque (STT)-MRAM and resistive random access memory (RRAM)] to take advantages of their nonvolatility and high density. However, effective computation dynamic range is far lower than their static random access memory (SRAM)-CIM counterparts due to low device ON/ OFF ratio. In this work, we combine a nonvolatile memory based on a voltage-controlled magnetic tunneling junction (VC-MTJ) device, called voltage-controlled MRAM or VC-MRAM, and accurate switched-capacitor-based CIM using a novel in situ magnetic-to-digital converter (MDC). The VC-MTJ device has demonstrated lower write energy and switching time compared to STT-MRAM device and has comparable density, read energy, and read latency. The in situ MDCs embedded inside each VC-MRAM row convert magnetically stored weight information to CMOS logic levels and enable switched-capacitor-based multiply–accumulate (MAC) operation with accuracy comparable to the state-of-the-art SRAM-CIM. This article describes the schematic and layout level design of a VC-MRAM CIM macro in 28 nm. This is the first nonvolatile CIM design to enable analog MAC computation with 256 parallel rows turned ON simultaneously without degradation in dynamic range (< 1 LSB). Detailed circuit simulations including experimentally validated VC-MTJ compact models show higher energy efficiency and higher density compared to the state-of-the-art SRAM-based CIM.
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Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1109/jxcdc.2023.3258431
- https://ieeexplore.ieee.org/ielx7/6570653/7076742/10075423.pdf
- OA Status
- gold
- Cited By
- 8
- References
- 28
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4327808078
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4327808078Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1109/jxcdc.2023.3258431Digital Object Identifier
- Title
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A Nonvolatile Compute-in-Memory Macro Using Voltage-Controlled MRAM and In Situ Magnetic-to-Digital ConverterWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2023Year of publication
- Publication date
-
2023-03-17Full publication date if available
- Authors
-
Vinod Kurian Jacob, Jiyue Yang, Haoran He, Puneet Gupta, Kang L. Wang, Sudhakar PamartiList of authors in order
- Landing page
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https://doi.org/10.1109/jxcdc.2023.3258431Publisher landing page
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https://ieeexplore.ieee.org/ielx7/6570653/7076742/10075423.pdfDirect link to full text PDF
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YesWhether a free full text is available
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goldOpen access status per OpenAlex
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https://ieeexplore.ieee.org/ielx7/6570653/7076742/10075423.pdfDirect OA link when available
- Concepts
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Magnetoresistive random-access memory, Static random-access memory, Schematic, Computer science, Computer hardware, Capacitor, Non-volatile memory, Voltage, CMOS, Electrical engineering, Engineering, Random access memoryTop concepts (fields/topics) attached by OpenAlex
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8Total citation count in OpenAlex
- Citations by year (recent)
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2025: 2, 2024: 4, 2023: 2Per-year citation counts (last 5 years)
- References (count)
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28Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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