A Novel Vertical Si TFET With Dual Doping-Less Tunneling Junction: A Simulation Study Including Trap-Related Non-Idealities Article Swipe

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Iman Chahardah Cherik , Saeed Mohammadi ·

YOU? · · 2023 · Open Access · · DOI: https://doi.org/10.1109/access.2023.3303198

In this article, we propose a novel vertical TFET that benefits from dual doping-less tunneling junction. Due to the low on-state current of silicon-based TFETs, we employ a dual-source configuration and a high-k dielectric material in the oxide region. The performance assessment of our device is thoroughly investigated using the Silvaco ATLAS device simulator. By activating models such as trap-assisted tunneling and interface trap charge for all the simulations our obtained results are less-ideal but closer to the experimental expectations. We also investigate the impact of Yttrium-doped hafnium, a well-known negative capacitance material, on our device performance. Parameters such as of and ratio of show that our Si-based device is a notable candidate for CMOS applications.

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Doping Quantum tunnelling Trap (plumbing) CMOS Capacitance Physics Optoelectronics Materials science Quantum mechanics Electrode Meteorology

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Type: article
Language: en
Landing Page: https://doi.org/10.1109/access.2023.3303198
PDF: https://ieeexplore.ieee.org/ielx7/6287639/6514899/10210567.pdf
OA Status: gold
Cited By: 4
References: 34
Related Works: 10
OpenAlex ID: https://openalex.org/W4385627170

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DOI: https://doi.org/10.1109/access.2023.3303198

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Title: A Novel Vertical Si TFET With Dual Doping-Less Tunneling Junction: A Simulation Study Including Trap-Related Non-Idealities

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Type: article

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Language: en

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Publication year: 2023

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Publication date: 2023-01-01

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Authors: Iman Chahardah Cherik, Saeed Mohammadi

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Landing page: https://doi.org/10.1109/access.2023.3303198

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Concepts: Doping, Quantum tunnelling, Trap (plumbing), CMOS, Capacitance, Physics, Optoelectronics, Materials science, Quantum mechanics, Electrode, Meteorology

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Cited by: 4

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Citations by year (recent): 2025: 2, 2024: 1, 2023: 1

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