Advanced polynomial Y-function method for precise mobility characterization in 2D FETs Article Swipe

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Joon I. Jang , Yaerim Lee , Hayoung Roh , Sungho Kim ·

YOU? · · 2025 · Open Access · · DOI: https://doi.org/10.1038/s41598-025-13658-0

Accurate extraction of mobility parameters in two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) is crucial for evaluating their performance and optimizing device design. Conventional mobility extraction methods such as the field-effect mobility approach suffer from inaccuracies owing to the influence of series resistance and noise amplification. In this paper, we present an advanced polynomial Y-function methodology for the precise mobility characterization of MoS₂ FETs. This methodology enables a systematic discrimination among various scattering mechanisms while precisely extracting the threshold voltage. Through a comparative analysis of back-gate (BG) and top-gate (TG) MoS₂ FET configurations, we demonstrated the superior accuracy and consistency of the proposed method compared with conventional approaches. The results revealed that the TG-FET exhibited stronger surface-roughness scattering owing to the intensified transverse electric field from the thinner dielectric layer, leading to pronounced mobility degradation. The polynomial Y-function method successfully isolates key degradation factors, thereby enabling a more comprehensive understanding of the carrier transport mechanisms in 2D FETs. These findings provide a robust framework for optimizing 2D material-based electronic devices, facilitating their integration into next-generation nanoelectronic applications.

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Type: article
Language: en
Landing Page: https://doi.org/10.1038/s41598-025-13658-0
PDF: https://www.nature.com/articles/s41598-025-13658-0.pdf
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DOI: https://doi.org/10.1038/s41598-025-13658-0

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Title: Advanced polynomial Y-function method for precise mobility characterization in 2D FETs

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Language: en

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Publication year: 2025

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Publication date: 2025-07-31

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Authors: Joon I. Jang, Yaerim Lee, Hayoung Roh, Sungho Kim

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Landing page: https://doi.org/10.1038/s41598-025-13658-0

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Concepts: Function (biology), Characterization (materials science), Computer science, Polynomial, Mathematics, Materials science, Nanotechnology, Biology, Cell biology, Mathematical analysis

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abstract_inverted_index.(TG)	91
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abstract_inverted_index.TG-FET	115
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abstract_inverted_index.Through	82
abstract_inverted_index.carrier	154
abstract_inverted_index.crucial	16
abstract_inverted_index.design.	24
abstract_inverted_index.enables	68
abstract_inverted_index.leading	132
abstract_inverted_index.methods	28
abstract_inverted_index.precise	60
abstract_inverted_index.present	52
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abstract_inverted_index.results	111
abstract_inverted_index.thereby	146
abstract_inverted_index.thinner	129
abstract_inverted_index.various	73
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abstract_inverted_index.advanced	54
abstract_inverted_index.analysis	85
abstract_inverted_index.approach	34
abstract_inverted_index.compared	106
abstract_inverted_index.devices,	171
abstract_inverted_index.electric	125
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abstract_inverted_index.factors,	145
abstract_inverted_index.findings	161
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abstract_inverted_index.mobility	3, 26, 33, 61, 135
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abstract_inverted_index.revealed	112
abstract_inverted_index.stronger	117
abstract_inverted_index.superior	98
abstract_inverted_index.top-gate	90
abstract_inverted_index.voltage.	81
abstract_inverted_index.back-gate	87
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abstract_inverted_index.threshold	80
abstract_inverted_index.transport	155
abstract_inverted_index.Y-function	56, 139
abstract_inverted_index.dielectric	130
abstract_inverted_index.electronic	170
abstract_inverted_index.evaluating	18
abstract_inverted_index.extracting	78
abstract_inverted_index.extraction	1, 27
abstract_inverted_index.mechanisms	75, 156
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abstract_inverted_index.approaches.	109
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abstract_inverted_index.degradation	144
abstract_inverted_index.integration	174
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abstract_inverted_index.transistors	13
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abstract_inverted_index.conventional	108
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abstract_inverted_index.demonstrated	96
abstract_inverted_index.facilitating	172
abstract_inverted_index.field-effect	12, 32
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abstract_inverted_index.nanoelectronic	177
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abstract_inverted_index.configurations,	94
abstract_inverted_index.next-generation	176
abstract_inverted_index.two-dimensional	6
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countries_distinct_count	1
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citation_normalized_percentile.is_in_top_1_percent	False
citation_normalized_percentile.is_in_top_10_percent	False