All-nanocellulose nonvolatile resistive memory Article Swipe
Umberto Celano
,
Kazuki Nagashima
,
Hirotaka Koga
,
Masaya Nogi
,
Fuwei Zhuge
,
Gang Meng
,
Yong He
,
Jo De Boeck
,
M. Jurczak
,
Wilfried Vandervorst
,
Takeshi Yanagida
·
YOU?
·
· 2016
· Open Access
·
· DOI: https://doi.org/10.1038/am.2016.144
YOU?
·
· 2016
· Open Access
·
· DOI: https://doi.org/10.1038/am.2016.144
Single-use disposable nonvolatile memory devices hold promise for novel applications in internet of everything (IoE) technology by storing the health status of individual humans in daily life. However, conventional memory devices are not disposable because they are mostly composed of non-renewable, non-biodegradable and sometimes toxic materials, causing serious damage to ecological systems when they are released to the environment. Here, we demonstrate an environment-friendly, disposable nonvolatile memory device composed of 99.3 vol.% nanocellulose. Our memory device consists of a nanocellulose-based resistive-switching layer and a nanopaper substrate. The device exhibited nonvolatile resistive switching with the capability of multilevel storage and potential scalability down to the single nanofiber level (ca. 15 nm). The biodegradability of our memory device was confirmed by burying it in natural soil for 26 days. Environmentally friendly memory cells that use 'nanopaper' substrates instead of silicon have been produced by an international team. The rising use of networked devices in consumer packaging and biomedical implants has created a need for recyclable electronic materials. By manipulating nanoscale cellulose fibres into extremely flat, paper-like substrates, Takeshi Yanagida from Kyushu University in Japan and co-workers have produced a nonvolatile memory device that can be composted. The team's technique first turned wood chips into nanopaper through a spraying and casting routine. Then, coating opposite sides of the nanopaper with silver and indium tin oxide electrodes produced a see-through, resistive switching device capable of multilevel persistent memory storage. Following water-based treatments to remove the electrodes, the nanopaper substrates biodegraded completely after being buried in soil for 26 days. Conventional memory devices are not disposable as they are mostly composed of non-renewable, non-biodegradable and some toxic materials, causing a serious damage for ecological system when they are emitted to the environment. Here we demonstrate an environment-friendly, disposable nonvolatile memory device composed of 99.3 vol.% nanocellulose. Our device consists of a nanocellulose-based resistive-switching layer and nanopaper substrate. The device exhibited the nonvolatile resistive switching with the capability of multilevel storage and the potential scalability down to single nanofiber level. Furthermore, the biodegradability of our memory device was confirmed by burying it into the natural soil for 26 days.
Related Topics
Concepts
Nanocellulose
Materials science
Non-volatile memory
Resistive random-access memory
Nanotechnology
Substrate (aquarium)
Nanofiber
Resistive touchscreen
Indium tin oxide
Layer (electronics)
Electrode
Optoelectronics
Cellulose
Computer science
Chemical engineering
Physical chemistry
Geology
Engineering
Oceanography
Chemistry
Computer vision
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1038/am.2016.144
- https://www.nature.com/articles/am2016144.pdf
- OA Status
- gold
- Cited By
- 77
- References
- 43
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2519313591
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W2519313591Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1038/am.2016.144Digital Object Identifier
- Title
-
All-nanocellulose nonvolatile resistive memoryWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2016Year of publication
- Publication date
-
2016-09-01Full publication date if available
- Authors
-
Umberto Celano, Kazuki Nagashima, Hirotaka Koga, Masaya Nogi, Fuwei Zhuge, Gang Meng, Yong He, Jo De Boeck, M. Jurczak, Wilfried Vandervorst, Takeshi YanagidaList of authors in order
- Landing page
-
https://doi.org/10.1038/am.2016.144Publisher landing page
- PDF URL
-
https://www.nature.com/articles/am2016144.pdfDirect link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
-
https://www.nature.com/articles/am2016144.pdfDirect OA link when available
- Concepts
-
Nanocellulose, Materials science, Non-volatile memory, Resistive random-access memory, Nanotechnology, Substrate (aquarium), Nanofiber, Resistive touchscreen, Indium tin oxide, Layer (electronics), Electrode, Optoelectronics, Cellulose, Computer science, Chemical engineering, Physical chemistry, Geology, Engineering, Oceanography, Chemistry, Computer visionTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
77Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 7, 2024: 5, 2023: 5, 2022: 8, 2021: 13Per-year citation counts (last 5 years)
- References (count)
-
43Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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