Al/NiO/p-Si Schottky Diyotun frekansa bağlı elektriksel özellikleri ve fabrikasyonu Article Swipe

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Ömer Sevgi̇li̇ , İkram Orak , Sultan Süleyman Özel , Faruk Özel ·

YOU? · · 2025 · Open Access · · DOI: https://doi.org/10.2339/politeknik.1626006

Al/NiO/p-Si Schottky diyot (SD) üretimi bir termal buharlaştırma sistemi kullanılarak oluşturulmuştur. Bir arayüzey tabakası olarak kullanılan NiO’in yapısal analizi Taramalı Elektron Mikroskobu (SEM) kullanılarak gerçekleştirilmiş ve SEM yan kesit görüntüsünden NiO arayüzey tabakasının kalınlığı 0,0345 µm olarak bulunmuştur. Al/NiO/p-Si SD’nin elektriksel özelliklerini frekansa bağlı karakterize etmek amacıyla C-V ve G/-V ölçümleri 50-5000 kHz frekans aralığında ve -3 V ile +3 V aralığında gerçekleştirilmiştir. Seri direnci (Rs) hesaplamak için Nicollian-Brews yöntemi kullanılırken, arayüzey durumlarını (Nss) hesaplamak için yüksek-düşük frekans kapasitans yöntemi (CHF-CLF) kullanılmıştır. Nss değerinin 1012 eV-1cm-2 mertebesinde olduğu belirlenmiştir. Bu bulgular, NiO'nun elektronik cihazlardaki geleneksel yalıtkan katmanlara umut verici bir alternatif olduğunu göstermektedir.

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Type: article
Landing Page: https://doi.org/10.2339/politeknik.1626006
PDF: https://dergipark.org.tr/tr/download/article-file/4548068
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DOI: https://doi.org/10.2339/politeknik.1626006

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Title: Al/NiO/p-Si Schottky Diyotun frekansa bağlı elektriksel özellikleri ve fabrikasyonu

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Publication year: 2025

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Publication date: 2025-10-29

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Authors: Ömer Sevgi̇li̇, İkram Orak, Sultan Süleyman Özel, Faruk Özel

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Landing page: https://doi.org/10.2339/politeknik.1626006

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abstract_inverted_index.V	57, 60
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