An elongated quantum dot as a distributed charge sensor Article Swipe
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· 2023
· Open Access
·
· DOI: https://doi.org/10.48550/arxiv.2301.01650
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separated by an elongated quantum dot (340 nm long, 50 nm wide). We monitor charge transitions of the elongated quantum dot by measuring radiofrequency single-electron currents to a reservoir to which we connect a lumped-element resonator. We operate the dot as a single electron box to achieve charge sensing of remote quantum dots in each array, separated by a distance of 510 nm. Simultaneous charge detection on both ends of the elongated dot demonstrates that the charge is well distributed across its nominal length, supported by the simulated quantum-mechanical electron density. Our results illustrate how single-electron boxes can be realised with versatile foot- prints that may enable novel and compact quantum processor layouts, offering distributed charge sensing in addition to the possibility of mediated coupling.
Related Topics
- Type
- preprint
- Language
- en
- Landing Page
- http://arxiv.org/abs/2301.01650
- https://arxiv.org/pdf/2301.01650
- OA Status
- green
- References
- 42
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4313680024
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4313680024Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.48550/arxiv.2301.01650Digital Object Identifier
- Title
-
An elongated quantum dot as a distributed charge sensorWork title
- Type
-
preprintOpenAlex work type
- Language
-
enPrimary language
- Publication year
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2023Year of publication
- Publication date
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2023-01-04Full publication date if available
- Authors
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S. M. Patomäki, J. Williams, Fabrizio Berritta, C. Lainé, M. A. Fogarty, R. C. C. Leon, Julien Jussot, Stefan Kubicek, A. Chatterjee, B. Govoreanu, Ferdinand Kuemmeth, John J. L. Morton, M. Fernando González-ZalbaList of authors in order
- Landing page
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https://arxiv.org/abs/2301.01650Publisher landing page
- PDF URL
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https://arxiv.org/pdf/2301.01650Direct link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- OA URL
-
https://arxiv.org/pdf/2301.01650Direct OA link when available
- Concepts
-
Quantum dot, Charge (physics), Quantum point contact, Electron, Quantum dot laser, Spin (aerodynamics), Optoelectronics, Heterojunction, Physics, Semiconductor, Condensed matter physics, Materials science, Quantum well, Quantum mechanics, Thermodynamics, Laser, Semiconductor laser theoryTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
0Total citation count in OpenAlex
- References (count)
-
42Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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