Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy Article Swipe
Payam Rajabi Kalvani
,
A. Parisini
,
M. Pavesi
,
Francesco Mattei
,
Piero Mazzolini
,
Kingsley Egbo
,
Oliver Bierwagen
,
Abderrahim Moumen
,
Salvatore Vantaggio
,
Samaneh Shapouri
,
Matteo Bosi
,
L. Seravalli
,
R. Fornari
·
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1002/aelm.202500072
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1002/aelm.202500072
The impact of thermal treatments on the trapping phenomena in (001) Si‐doped κ‐Ga 2 O 3 epi‐layers, via optical admittance spectroscopy technique, is reported. Two Pt/κ‐Ga 2 O 3 Schottky contacts are investigated: one made on top of an as‐grown Si‐doped κ‐Ga 2 O 3 layer and the other on a thermally treated one. Three different illumination conditions, including monochromatic UV‐C ( λ = 254 nm), UV‐B ( λ = 312 nm), and UV‐A ( λ = 365 nm), are employed for the capacitance–voltage ( C–V ) measurements at different bias and AC frequencies to investigate traps and deep levels in κ‐Ga 2 O 3 :Si. The net donor density profiles in dark and approximate density of photoionized traps of the as‐grown and thermally treated samples are extracted from the C–V curves in the dual‐frequency mode under different illumination conditions. A SnO/κ‐Ga 2 O 3 p‐n heterojunction, where the κ‐Ga 2 O 3 :Si layer underwent a double thermal treatment, is also investigated to better understand the relation between thermal treatment and distribution of trap density. The transient photocapacitance and photocurrent measurements are performed under the same illumination conditions to evaluate the response times of traps. This study provides a better understanding of the trapping phenomena in the as‐grown and thermally treated κ‐Ga 2 O 3 :Si epi‐layers, which are important for UV‐C detection applications.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1002/aelm.202500072
- https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202500072
- OA Status
- gold
- References
- 56
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4412009629
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Raw OpenAlex JSON
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https://openalex.org/W4412009629Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1002/aelm.202500072Digital Object Identifier
- Title
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Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance SpectroscopyWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2025Year of publication
- Publication date
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2025-07-03Full publication date if available
- Authors
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Payam Rajabi Kalvani, A. Parisini, M. Pavesi, Francesco Mattei, Piero Mazzolini, Kingsley Egbo, Oliver Bierwagen, Abderrahim Moumen, Salvatore Vantaggio, Samaneh Shapouri, Matteo Bosi, L. Seravalli, R. FornariList of authors in order
- Landing page
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https://doi.org/10.1002/aelm.202500072Publisher landing page
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https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202500072Direct link to full text PDF
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YesWhether a free full text is available
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goldOpen access status per OpenAlex
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https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.202500072Direct OA link when available
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Materials science, Trapping, Doping, Admittance, Spectroscopy, Optoelectronics, Analytical Chemistry (journal), Electrical engineering, Ecology, Engineering, Physics, Quantum mechanics, Electrical impedance, Chromatography, Biology, ChemistryTop concepts (fields/topics) attached by OpenAlex
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0Total citation count in OpenAlex
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56Number of works referenced by this work
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10Other works algorithmically related by OpenAlex
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