Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting Article Swipe
Oliver Steuer
,
Daniel Schwarz
,
Michael Oehme
,
Jörg Schulze
,
Herbert S. Mączko
,
R. Kudrawiec
,
Inga Anita Fischer
,
René Heller
,
René Hübner
,
Muhammad Murtaza Khan
,
Yordan M. Georgiev
,
Shengqiang Zhou
,
M. Helm
,
Sławomir Prucnal
·
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1088/1361-648x/aca3ea
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1088/1361-648x/aca3ea
The pseudomorphic growth of Ge 1− x Sn x on Ge causes in-plane compressive strain, which degrades the superior properties of the Ge 1− x Sn x alloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in Ge 1− x Sn x alloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman and x-ray diffraction (XRD) show that the initial in-plane compressive strain is removed. Moreover, for PLM energy densities higher than 0.5 J cm −2 , the Ge 0.89 Sn 0.11 layer becomes tensile strained. Simultaneously, as revealed by Rutherford Backscattering spectrometry, cross-sectional transmission electron microscopy investigations and XRD the crystalline quality and Sn-distribution in PLM-treated Ge 0.89 Sn 0.11 layers are only slightly affected. Additionally, the change of the band structure after PLM is confirmed by low-temperature photoreflectance measurements. The presented results prove that post-growth ns-range PLM is an effective way for band-gap and strain engineering in highly-mismatched alloys.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1088/1361-648x/aca3ea
- https://iopscience.iop.org/article/10.1088/1361-648X/aca3ea/pdf
- OA Status
- hybrid
- Cited By
- 14
- References
- 32
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4309368955
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- OpenAlex ID
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https://openalex.org/W4309368955Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1088/1361-648x/aca3eaDigital Object Identifier
- Title
-
Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser meltingWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2022Year of publication
- Publication date
-
2022-11-17Full publication date if available
- Authors
-
Oliver Steuer, Daniel Schwarz, Michael Oehme, Jörg Schulze, Herbert S. Mączko, R. Kudrawiec, Inga Anita Fischer, René Heller, René Hübner, Muhammad Murtaza Khan, Yordan M. Georgiev, Shengqiang Zhou, M. Helm, Sławomir PrucnalList of authors in order
- Landing page
-
https://doi.org/10.1088/1361-648x/aca3eaPublisher landing page
- PDF URL
-
https://iopscience.iop.org/article/10.1088/1361-648X/aca3ea/pdfDirect link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
-
hybridOpen access status per OpenAlex
- OA URL
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https://iopscience.iop.org/article/10.1088/1361-648X/aca3ea/pdfDirect OA link when available
- Concepts
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Materials science, Strain engineering, Band gap, Substrate (aquarium), Raman spectroscopy, Strain (injury), Laser, Diffraction, Scanning electron microscope, Optoelectronics, Ultimate tensile strength, Composite material, Optics, Silicon, Oceanography, Geology, Internal medicine, Physics, MedicineTop concepts (fields/topics) attached by OpenAlex
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14Total citation count in OpenAlex
- Citations by year (recent)
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2025: 5, 2024: 5, 2023: 4Per-year citation counts (last 5 years)
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32Number of works referenced by this work
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10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.microscopy | 109 |
| abstract_inverted_index.nanosecond | 59 |
| abstract_inverted_index.properties | 20 |
| abstract_inverted_index.Micro-Raman | 64 |
| abstract_inverted_index.PLM-treated | 119 |
| abstract_inverted_index.compressive | 14, 74 |
| abstract_inverted_index.crystalline | 114 |
| abstract_inverted_index.diffraction | 67 |
| abstract_inverted_index.engineering | 32, 43, 160 |
| abstract_inverted_index.post-growth | 58, 149 |
| abstract_inverted_index.transmission | 107 |
| abstract_inverted_index.Additionally, | 129 |
| abstract_inverted_index.measurements. | 143 |
| abstract_inverted_index.pseudomorphic | 2 |
| abstract_inverted_index.spectrometry, | 105 |
| abstract_inverted_index.Backscattering | 104 |
| abstract_inverted_index.investigations | 110 |
| abstract_inverted_index.Simultaneously, | 99 |
| abstract_inverted_index.Sn-distribution | 117 |
| abstract_inverted_index.cross-sectional | 106 |
| abstract_inverted_index.low-temperature | 141 |
| abstract_inverted_index.photoreflectance | 142 |
| abstract_inverted_index.highly-mismatched | 162 |
| cited_by_percentile_year.max | 98 |
| cited_by_percentile_year.min | 97 |
| corresponding_author_ids | https://openalex.org/A5036710688 |
| countries_distinct_count | 3 |
| institutions_distinct_count | 14 |
| corresponding_institution_ids | https://openalex.org/I2801798921 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/7 |
| sustainable_development_goals[0].score | 0.75 |
| sustainable_development_goals[0].display_name | Affordable and clean energy |
| citation_normalized_percentile.value | 0.81078284 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |