Bi ₂ O ₂ Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance Article Swipe

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Chi-Chun Cheng , H.C. Chien , Tai‐Ting Lee , Huynh-Uyen-Phuong Nguyen , Yung‐Chang Lin , Chang-Hong Shen , Yu‐Lun Chueh , M. Y. Chou ·

YOU? · · 2025 · Open Access · · DOI: https://doi.org/10.1021/acsnano.5c14437

The continuous scaling of conventional floating-gate memories faces major challenges due to charge leakage and complex multilayer architectures. Here, we report a monolithic nonvolatile memory (NVM) device constructed using a single 2D material, Bi₂O₂Se, that integrates channel, charge storage, and tunneling functions within the same material system. Upon UV-ozone treatment, semiconducting Bi₂O₂Se (s-BOS) forms a conformal and crystalline β-Bi₂SeO₅ shell. Subsequent thermal annealing introduces selenium vacancies into the core, converting it to metallic Bi₂O₂Se (m-BOS), which serves as a floating-gate capable of efficient charge trapping, while the crystalline BOS oxide shell provides robust tunneling insulation and suppresses leakage. This monolithic structure integrates channel (s-BOS), storage (m-BOS), and tunneling functions (BOS oxide) within a single material system. The devices exhibit a large memory window, a high charge storage density (∼5 × 10¹³ cm^-2), and a current ON/OFF ratio exceeding 10⁸. They also show fast programming/erasing with ±12 V, 100 ms pulses, robust endurance over 2000 cycles, and charge retention exceeding 10⁴ seconds. Compared with other 2D NVMs employing separate materials for each functional layer, this single-material platform enables simplified fabrication and improved scalability in the 2D memory device design.

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Type: article
Language: en
Landing Page: https://doi.org/10.1021/acsnano.5c14437
OA Status: hybrid
References: 45
OpenAlex ID: https://openalex.org/W4416295571

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DOI: https://doi.org/10.1021/acsnano.5c14437

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Title: Bi ₂ O ₂ Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance

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Type: article

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Language: en

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Publication year: 2025

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Publication date: 2025-11-17

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Authors: Chi-Chun Cheng, H.C. Chien, Tai‐Ting Lee, Huynh-Uyen-Phuong Nguyen, Yung‐Chang Lin, Chang-Hong Shen, Yu‐Lun Chueh, M. Y. Chou

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Landing page: https://doi.org/10.1021/acsnano.5c14437

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OA status: hybrid

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OA URL: https://doi.org/10.1021/acsnano.5c14437

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References (count): 45

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abstract_inverted_index.employing	166
abstract_inverted_index.endurance	151
abstract_inverted_index.exceeding	137, 158
abstract_inverted_index.functions	41, 108
abstract_inverted_index.material,	32
abstract_inverted_index.materials	168
abstract_inverted_index.retention	157
abstract_inverted_index.structure	100
abstract_inverted_index.trapping,	84
abstract_inverted_index.tunneling	40, 93, 107
abstract_inverted_index.vacancies	65
abstract_inverted_index.Subsequent	60
abstract_inverted_index.challenges	9
abstract_inverted_index.continuous	1
abstract_inverted_index.converting	69
abstract_inverted_index.functional	171
abstract_inverted_index.insulation	94
abstract_inverted_index.integrates	35, 101
abstract_inverted_index.introduces	63
abstract_inverted_index.monolithic	22, 99
abstract_inverted_index.multilayer	16
abstract_inverted_index.simplified	177
abstract_inverted_index.suppresses	96
abstract_inverted_index.treatment,	49
abstract_inverted_index.constructed	27
abstract_inverted_index.crystalline	57, 87
abstract_inverted_index.fabrication	178
abstract_inverted_index.nonvolatile	23
abstract_inverted_index.scalability	181
abstract_inverted_index.conventional	4
abstract_inverted_index.floating-gate	5, 79
abstract_inverted_index.10<sup>4</sup>	159
abstract_inverted_index.architectures.	17
abstract_inverted_index.semiconducting	50
abstract_inverted_index.10<sup>13</sup>	130
abstract_inverted_index.10<sup>8</sup>.	138
abstract_inverted_index.single-material	174
abstract_inverted_index.cm<sup>-2</sup>),	131
abstract_inverted_index.programming/erasing	143
abstract_inverted_index.Bi<sub>2</sub>O<sub>2</sub>Se	51, 73
abstract_inverted_index.Bi<sub>2</sub>O<sub>2</sub>Se,	33
abstract_inverted_index.β-Bi<sub>2</sub>SeO<sub>5</sub>	58
cited_by_percentile_year
countries_distinct_count	2
institutions_distinct_count	8
citation_normalized_percentile

Bi 2 O 2 Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance Article Swipe

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Bi ₂ O ₂ Se-Based Monolithic Floating-Gate Nonvolatile Memory with Enhanced Charge Retention and Switching Performance Article Swipe