Comparative Evaluation of Memory Technologies for Synaptic Crossbar Arrays -- Part I: Robustness-driven Device-Circuit Co-Design and System Implications Article Swipe
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· 2023
· Open Access
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· DOI: https://doi.org/10.48550/arxiv.2307.04261
In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) have been explored as synaptic device candidates, each with its own pros and cons. In this work, we perform a design space exploration and comparative evaluation of four technologies viz. 8T SRAMs, ferroelectric transistors (FeFETs), resistive RAMs (ReRAMs) and spin-orbit torque magnetic RAMs (SOT-MRAMs) in the context of IMC robustness and DNN accuracy. For a fair comparison, we carefully optimize each technology specifically for synaptic crossbar design accounting for device and circuit non-idealities. By integrating different technologies into a cross-layer simulation flow based on physical models of synaptic devices and interconnects, we present insights into various device-circuit interactions. Based on the optimized designs, we obtain inference results for ResNet-20 on CIFAR-10 dataset. Among the four technologies, we show that FeFETs-based DNNs achieve the highest accuracy (followed closely by ReRAMs) and the largest resilience to process variations due to the compactness and high ON/OFF current ratio of FeFET bit-cells. In Part II of this paper, we expand the technology evaluation considering various device-circuit design knobs used for crossbar arrays.
Related Topics
- Type
- preprint
- Language
- en
- Landing Page
- http://arxiv.org/abs/2307.04261
- https://arxiv.org/pdf/2307.04261
- OA Status
- green
- Cited By
- 1
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4384075502
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4384075502Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.48550/arxiv.2307.04261Digital Object Identifier
- Title
-
Comparative Evaluation of Memory Technologies for Synaptic Crossbar Arrays -- Part I: Robustness-driven Device-Circuit Co-Design and System ImplicationsWork title
- Type
-
preprintOpenAlex work type
- Language
-
enPrimary language
- Publication year
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2023Year of publication
- Publication date
-
2023-07-09Full publication date if available
- Authors
-
Chunguang Wang, Jeffry Victor, Sumeet Kumar GuptaList of authors in order
- Landing page
-
https://arxiv.org/abs/2307.04261Publisher landing page
- PDF URL
-
https://arxiv.org/pdf/2307.04261Direct link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- OA URL
-
https://arxiv.org/pdf/2307.04261Direct OA link when available
- Concepts
-
Crossbar switch, Computer science, CMOS, Power network design, Context (archaeology), Electronic engineering, Node (physics), Robustness (evolution), Computer architecture, Embedded system, Engineering, Chip, Telecommunications, Paleontology, Gene, Structural engineering, Chemistry, Biochemistry, BiologyTop concepts (fields/topics) attached by OpenAlex
- Cited by
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1Total citation count in OpenAlex
- Citations by year (recent)
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2024: 1Per-year citation counts (last 5 years)
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10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.synaptic | 4, 25, 85, 108 |
| abstract_inverted_index.(FeFETs), | 55 |
| abstract_inverted_index.(followed | 146 |
| abstract_inverted_index.In-memory | 0 |
| abstract_inverted_index.ResNet-20 | 129 |
| abstract_inverted_index.accuracy. | 73 |
| abstract_inverted_index.carefully | 79 |
| abstract_inverted_index.computing | 1 |
| abstract_inverted_index.different | 96 |
| abstract_inverted_index.inference | 126 |
| abstract_inverted_index.optimized | 122 |
| abstract_inverted_index.promising | 8 |
| abstract_inverted_index.resistive | 56 |
| abstract_inverted_index.utilizing | 3 |
| abstract_inverted_index.accounting | 88 |
| abstract_inverted_index.bit-cells. | 168 |
| abstract_inverted_index.evaluation | 46, 179 |
| abstract_inverted_index.post-CMOS) | 20 |
| abstract_inverted_index.resilience | 153 |
| abstract_inverted_index.robustness | 70 |
| abstract_inverted_index.simulation | 101 |
| abstract_inverted_index.spin-orbit | 60 |
| abstract_inverted_index.technology | 82, 178 |
| abstract_inverted_index.variations | 156 |
| abstract_inverted_index.(SOT-MRAMs) | 64 |
| abstract_inverted_index.candidates, | 27 |
| abstract_inverted_index.compactness | 160 |
| abstract_inverted_index.comparative | 45 |
| abstract_inverted_index.comparison, | 77 |
| abstract_inverted_index.considering | 180 |
| abstract_inverted_index.cross-layer | 100 |
| abstract_inverted_index.exploration | 43 |
| abstract_inverted_index.integrating | 95 |
| abstract_inverted_index.transistors | 54 |
| abstract_inverted_index.FeFETs-based | 140 |
| abstract_inverted_index.specifically | 83 |
| abstract_inverted_index.technologies | 17, 49, 97 |
| abstract_inverted_index.accelerators. | 15 |
| abstract_inverted_index.ferroelectric | 53 |
| abstract_inverted_index.interactions. | 118 |
| abstract_inverted_index.technologies, | 136 |
| abstract_inverted_index.device-circuit | 117, 182 |
| abstract_inverted_index.interconnects, | 111 |
| abstract_inverted_index.non-idealities. | 93 |
| abstract_inverted_index.energy-efficient | 10 |
| cited_by_percentile_year | |
| countries_distinct_count | 0 |
| institutions_distinct_count | 3 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/7 |
| sustainable_development_goals[0].score | 0.8899999856948853 |
| sustainable_development_goals[0].display_name | Affordable and clean energy |
| citation_normalized_percentile |