Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor Article Swipe
Jonathan Parion
,
Romain Scaffidi
,
Filip Duerinckx
,
Hariharsudan Sivaramakrishnan Radhakrishnan
,
Denis Flandre
,
Jef Poortmans
,
Bart Vermang
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1063/5.0203484
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1063/5.0203484
Lithium fluoride (LiF) is currently a very popular dielectric material used as a passivation or transport layer in a variety of applications, especially in high-efficiency solar cells. Despite this, its conduction properties and interface behavior with silicon remain largely unexplored. In this work, a LiF metal–insulator–semiconductor (MIS) structure is fabricated and characterized, and its properties are compared to the well-understood aluminum oxide (Al2O3) MIS structure. First, a higher current density in LiF compared to Al2O3 is highlighted, as well as its PN junction-like behavior with n-type silicon (n-Si), being rather unconventional for a dielectric layer. C–V measurements showcase the likely presence of an interface defect, causing an increase in the apparent doping and a shift in the flatband voltage VFB by +70 meV. This defect is found to be of the acceptor type, which renders the interface fixed charge more negative and improves the field-effect passivation in the case of a negative Qf. Finally, a density of interface states Dit≈2×1011 cm−2 eV−1 was found for LiF/n-Si, which is a low value showing appropriate chemical passivation at the interface. Overall, this work enables us to shed more light on the interface properties of LiF on n-Si, which is an essential step toward its wider use in state-of-the-art solar cells and other silicon-based devices.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1063/5.0203484
- https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0203484/19864766/142901_1_5.0203484.pdf
- OA Status
- bronze
- Cited By
- 2
- References
- 24
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4393411985
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4393411985Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1063/5.0203484Digital Object Identifier
- Title
-
Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitorWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2024Year of publication
- Publication date
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2024-04-01Full publication date if available
- Authors
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Jonathan Parion, Romain Scaffidi, Filip Duerinckx, Hariharsudan Sivaramakrishnan Radhakrishnan, Denis Flandre, Jef Poortmans, Bart VermangList of authors in order
- Landing page
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https://doi.org/10.1063/5.0203484Publisher landing page
- PDF URL
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https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0203484/19864766/142901_1_5.0203484.pdfDirect link to full text PDF
- Open access
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YesWhether a free full text is available
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bronzeOpen access status per OpenAlex
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https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0203484/19864766/142901_1_5.0203484.pdfDirect OA link when available
- Concepts
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Passivation, Silicon, Capacitor, Materials science, Optoelectronics, Interface (matter), Nanotechnology, Electrical engineering, Composite material, Voltage, Engineering, Capillary action, Layer (electronics), Capillary numberTop concepts (fields/topics) attached by OpenAlex
- Cited by
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2Total citation count in OpenAlex
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2025: 2Per-year citation counts (last 5 years)
- References (count)
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24Number of works referenced by this work
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10Other works algorithmically related by OpenAlex
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