Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers Article Swipe
Linqu Luo
,
Mohamad Insan Nugraha
,
Hendrik Faber
,
Shaoxian Li
,
Chrysa Aivalioti
,
Bahaaeddin Irziqat
,
Ricardo Ruvalcaba
,
Temur Maksudov
,
Yuying Yang
,
Harold F. Mazo‐Mantilla
,
Lazaros Panagiotidis
,
Mohamed Nejib Hedhili
,
Furkan H. Isikgor
,
Leonidas Tsetseris
,
Shadi Fatayer
,
Martin Heeney
,
Thomas D. Anthopoulos
·
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1002/adfm.202418863
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1002/adfm.202418863
The self‐aligned gate (SAG) transistor architecture is attractive for electronic circuit applications due to its enabling attributes, including low parasitic capacitances and higher frequency operation. However, SAG transistors often rely on complex manufacturing, which limits their practical utilization. Herein, we overcome this bottleneck and demonstrate organic SAG transistors in which the self‐aligned source/drain (S/D) electrodes are separated by the gate (G) terminal with sub‐20 nm gaps. The SAG architecture eliminates parasitic overlaps while minimizing access resistance for the injected carriers. Moreover, precise work function engineering of the self‐aligned Au S/D contacts is demonstrated using phosphonic acid (PA) self‐assembled monolayers (SAMs) functionalized directly onto Au. Analysis of the Au surface corroborated by Density Functional Theory calculations and scanning tunneling microscopy reveal the unexpected formation of PA SAMs directly onto Au for the first time. Combining different organic semiconductors with appropriate SAMs enables the development of hole and electron‐transporting SAG transistors with enhanced performance. Integrating the n‐ and p‐channel transistors yields complementary logic circuitry with high gain and noise margins, showcasing the effectiveness of this approach. The work highlights the enormous potential of combining the SAG transistor platform with work function modifying PA SAMs to develop printed electronics with improved functionality.
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Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1002/adfm.202418863
- OA Status
- hybrid
- Cited By
- 2
- References
- 53
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4407560214
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4407560214Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1002/adfm.202418863Digital Object Identifier
- Title
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Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled MonolayersWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2025Year of publication
- Publication date
-
2025-02-14Full publication date if available
- Authors
-
Linqu Luo, Mohamad Insan Nugraha, Hendrik Faber, Shaoxian Li, Chrysa Aivalioti, Bahaaeddin Irziqat, Ricardo Ruvalcaba, Temur Maksudov, Yuying Yang, Harold F. Mazo‐Mantilla, Lazaros Panagiotidis, Mohamed Nejib Hedhili, Furkan H. Isikgor, Leonidas Tsetseris, Shadi Fatayer, Martin Heeney, Thomas D. AnthopoulosList of authors in order
- Landing page
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https://doi.org/10.1002/adfm.202418863Publisher landing page
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YesWhether a free full text is available
- OA status
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hybridOpen access status per OpenAlex
- OA URL
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https://doi.org/10.1002/adfm.202418863Direct OA link when available
- Concepts
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Materials science, Transistor, Self-assembled monolayer, Monolayer, Optoelectronics, Electronic circuit, Work function, Passivation, Nanotechnology, Electrical engineering, Layer (electronics), Voltage, EngineeringTop concepts (fields/topics) attached by OpenAlex
- Cited by
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2Total citation count in OpenAlex
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2025: 2Per-year citation counts (last 5 years)
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53Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.applications | 12 |
| abstract_inverted_index.architecture | 6, 69 |
| abstract_inverted_index.calculations | 115 |
| abstract_inverted_index.capacitances | 21 |
| abstract_inverted_index.corroborated | 110 |
| abstract_inverted_index.demonstrated | 93 |
| abstract_inverted_index.performance. | 152 |
| abstract_inverted_index.source/drain | 53 |
| abstract_inverted_index.utilization. | 38 |
| abstract_inverted_index.complementary | 160 |
| abstract_inverted_index.effectiveness | 171 |
| abstract_inverted_index.functionality. | 199 |
| abstract_inverted_index.functionalized | 101 |
| abstract_inverted_index.manufacturing, | 33 |
| abstract_inverted_index.self‐aligned | 2, 52, 88 |
| abstract_inverted_index.semiconductors | 137 |
| abstract_inverted_index.self‐assembled | 98 |
| abstract_inverted_index.electron‐transporting | 147 |
| cited_by_percentile_year.max | 97 |
| cited_by_percentile_year.min | 95 |
| corresponding_author_ids | https://openalex.org/A5008771526, https://openalex.org/A5054370604 |
| countries_distinct_count | 3 |
| institutions_distinct_count | 17 |
| corresponding_institution_ids | https://openalex.org/I28407311, https://openalex.org/I3130352432, https://openalex.org/I4387154144, https://openalex.org/I71920554 |
| citation_normalized_percentile.value | 0.86492175 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | True |