Controlled Rotation of Electrically Injected Spins in a Nonballistic Spin-Field-Effect Transistor Article Swipe

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Franz Eberle , Dieter Schuh , Benedikt Grünewald , Dominique Bougeard , D. Weiß , M. Ciorga ·

YOU? · · 2023 · Open Access · · DOI: https://doi.org/10.1021/acs.nanolett.3c00369

Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin-field-effect transistor (sFET). To date, there have been only a few reports on electrically controlled spin precession in sFET-like devices. These devices operate in the ballistic regime, as postulated in the original sFET proposal, and hence need high SOC channel materials in practice. Here, we demonstrate gate-controlled precession of spins in a nonballistic sFET using an array of narrow diffusive wires as a channel between a spin source and a spin drain. Our study shows that spins traveling in a semiconducting channel can be coherently rotated on a distance far exceeding the electrons' mean free path, and spin-transistor functionality can be thus achieved in nonballistic channels with relatively low SOC, relaxing two major constraints of the original sFET proposal.

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Spinster

Precession

Transistor

Condensed Matter Physics

Artificial Intelligence

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Spins Spintronics Spin transistor Precession Transistor Condensed matter physics Spin (aerodynamics) Physics Field-effect transistor Rotation (mathematics) Spin Hall effect Ballistic conduction Realization (probability) Electron Optoelectronics Spin polarization Voltage Ferromagnetism Quantum mechanics Computer science Statistics Mathematics Thermodynamics Artificial intelligence

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Type: article
Language: en
Landing Page: https://doi.org/10.1021/acs.nanolett.3c00369
OA Status: green
Cited By: 8
References: 47
Related Works: 10
OpenAlex ID: https://openalex.org/W4378801598

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DOI: https://doi.org/10.1021/acs.nanolett.3c00369

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Title: Controlled Rotation of Electrically Injected Spins in a Nonballistic Spin-Field-Effect Transistor

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Type: article

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Language: en

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Publication year: 2023

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Publication date: 2023-05-31

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Authors: Franz Eberle, Dieter Schuh, Benedikt Grünewald, Dominique Bougeard, D. Weiß, M. Ciorga

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Landing page: https://doi.org/10.1021/acs.nanolett.3c00369

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OA URL: https://pmc.ncbi.nlm.nih.gov/articles/PMC10274824/pdf/nl3c00369.pdf

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Concepts: Spins, Spintronics, Spin transistor, Precession, Transistor, Condensed matter physics, Spin (aerodynamics), Physics, Field-effect transistor, Rotation (mathematics), Spin Hall effect, Ballistic conduction, Realization (probability), Electron, Optoelectronics, Spin polarization, Voltage, Ferromagnetism, Quantum mechanics, Computer science, Statistics, Mathematics, Thermodynamics, Artificial intelligence

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Cited by: 8

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Citations by year (recent): 2025: 4, 2024: 2, 2023: 2

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