Defect accumulation in β-Ga2O3 implanted with Yb Article Swipe

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Mahwish Sarwar , R. Ratajczak , Cyprian Mieszczyński , A. Wierzbicka , Sylwia Gierałtowska , René Heller , Stefan Eisenwinder , Wojciech Wozniak , E. Guziewicz ·

YOU? · · 2024 · Open Access · · DOI: https://doi.org/10.1016/j.actamat.2024.119760

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$Diffraction$

Crystallographic Defect

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Materials science Fluence Annealing (glass) Radiation damage Ion Ion implantation Rutherford backscattering spectrometry Crystallography Irradiation Single crystal Analytical Chemistry (journal) Crystal structure Diffraction Crystallographic defect Nanotechnology Thin film Optics Metallurgy Chemistry Physics Organic chemistry Chromatography Nuclear physics

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Type: article
Language: en
Landing Page: https://doi.org/10.1016/j.actamat.2024.119760
OA Status: green
Cited By: 17
References: 42
Related Works: 10
OpenAlex ID: https://openalex.org/W4391888605

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DOI: https://doi.org/10.1016/j.actamat.2024.119760

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Title: Defect accumulation in β-Ga2O3 implanted with Yb

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Type: article

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Language: en

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Publication year: 2024

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Publication date: 2024-02-16

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Authors: Mahwish Sarwar, R. Ratajczak, Cyprian Mieszczyński, A. Wierzbicka, Sylwia Gierałtowska, René Heller, Stefan Eisenwinder, Wojciech Wozniak, E. Guziewicz

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Landing page: https://doi.org/10.1016/j.actamat.2024.119760

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Open access: Yes

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OA status: green

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OA URL: https://arxiv.org/pdf/2503.18466

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Concepts: Materials science, Fluence, Annealing (glass), Radiation damage, Ion, Ion implantation, Rutherford backscattering spectrometry, Crystallography, Irradiation, Single crystal, Analytical Chemistry (journal), Crystal structure, Diffraction, Crystallographic defect, Nanotechnology, Thin film, Optics, Metallurgy, Chemistry, Physics, Organic chemistry, Chromatography, Nuclear physics

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Cited by: 17

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Citations by year (recent): 2025: 11, 2024: 6

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