Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates Article Swipe
Wenwu Pan
,
Renjie Gu
,
Z. K. Zhang
,
Wen Lei
,
Gilberto A. Umana‐Membreno
,
David J. Smith
,
J. Antoszewski
,
L. Faraone
·
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1007/s11664-022-09725-1
YOU?
·
· 2022
· Open Access
·
· DOI: https://doi.org/10.1007/s11664-022-09725-1
Demand for high-performance HgCdTe infrared detectors with larger array size and lower cost has fuelled the heteroepitaxial growth of HgCdTe on CdTe buffer layers on lattice-mismatched alternative substrates such as Si, Ge, GaAs and GaSb. However, the resulting high threading dislocation (TD) density in HgCdTe/CdTe limits their ultimate application. Herein, strained CdZnTe/CdTe superlattice layers have been used as dislocation filtering layers (DFL) to reduce the TDs in CdTe buffer layers grown on GaAs (211)B substrates (14.4% lattice-mismatch) by molecular beam epitaxy (MBE). Cross-sectional microstructure characterization indicates that the DFLs suppress the propagation of TDs. For optimal Zn content combined with thermal annealing, the DFLs effectively reduce the defect density of the upper-most CdTe layer from low-10 7 cm −2 to the critical level of below 10 6 cm −2 . In comparison to conventional buffer CdTe layers, the in-plane lattice of the CdTe layers in/near the DFL region is compressively strained, leading to a spread in x-ray double-crystal rocking curve full-width at half-maximum values but better in-plane lattice-matching with HgCdTe. The combined advantages of lower dislocation density and better lattice-matching with HgCdTe indicate that the DFL approach is a promising path towards achieving heteroepitaxy of high-quality HgCdTe on large-area lattice-mismatched substrates for fabricating next-generation infrared detectors.
Related Topics
Concepts
Molecular beam epitaxy
Etch pit density
Cadmium telluride photovoltaics
Materials science
Dislocation
Optoelectronics
Superlattice
Annealing (glass)
Epitaxy
Layer (electronics)
Nanotechnology
Etching (microfabrication)
Composite material
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1007/s11664-022-09725-1
- https://link.springer.com/content/pdf/10.1007/s11664-022-09725-1.pdf
- OA Status
- hybrid
- Cited By
- 17
- References
- 56
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4281847024
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4281847024Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1007/s11664-022-09725-1Digital Object Identifier
- Title
-
Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B SubstratesWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2022Year of publication
- Publication date
-
2022-06-10Full publication date if available
- Authors
-
Wenwu Pan, Renjie Gu, Z. K. Zhang, Wen Lei, Gilberto A. Umana‐Membreno, David J. Smith, J. Antoszewski, L. FaraoneList of authors in order
- Landing page
-
https://doi.org/10.1007/s11664-022-09725-1Publisher landing page
- PDF URL
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https://link.springer.com/content/pdf/10.1007/s11664-022-09725-1.pdfDirect link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
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hybridOpen access status per OpenAlex
- OA URL
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https://link.springer.com/content/pdf/10.1007/s11664-022-09725-1.pdfDirect OA link when available
- Concepts
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Molecular beam epitaxy, Etch pit density, Cadmium telluride photovoltaics, Materials science, Dislocation, Optoelectronics, Superlattice, Annealing (glass), Epitaxy, Layer (electronics), Nanotechnology, Etching (microfabrication), Composite materialTop concepts (fields/topics) attached by OpenAlex
- Cited by
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17Total citation count in OpenAlex
- Citations by year (recent)
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2025: 1, 2024: 6, 2023: 8, 2022: 2Per-year citation counts (last 5 years)
- References (count)
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56Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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