Defects in polysilicon channel: Insight from first principles and multi-scale modelling Article Swipe
Rita Maji
,
Tommaso Rollo
,
Shruba Gangopadhyay
,
Eleonora Luppi
,
Elena Degoli
,
F. Nardi
,
Luca Larcher
,
Milan Pešić
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1016/j.sse.2024.109031
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1016/j.sse.2024.109031
With increasing demand for essential components in the field of electronic devices, enabling advancements in display technology, flexible electronics, and various industrial applications, thin-film transistors (TFTs) are significant. Their versatility and compatibility with low-temperature fabrication processes make them a vital element in advanced electronic systems. The use of polycrystalline silicon (Poly-Si) as the channel material is specific to TFT applications unlike single-crystal/epitaxial Si in high-performance integrated circuit transistors. Poly-Si is characterized by the presence of defects such as voids, grain boundaries (GBs), and dislocations, that exert detrimental influence on electrical conductivity and then on device performance. Understanding of these would help engineer the novel TFT devices with superior reliability. In this context, Fundamental properties of the GBs are calculated using density functional theory (DFT) and their impact on poly-Si TFTs performance and figures of merit is assessed using the Ginestra (R) simulation platform. To account the process contaminations, the impact of known lighter impurities on GBs is comprehensively studied. In this paper we show how material properties from DFT can be effectively virtualized to predict electronic device performance, enable fast and reliable evaluation of device sensitivity to material changes, and how outputs of this multi-scale modelling process agree with experiments.
Related Topics
Concepts
Polysilicon depletion effect
Scale (ratio)
Channel (broadcasting)
Materials science
Computer science
Engineering physics
Engineering
Electrical engineering
Telecommunications
Geography
Cartography
Transistor
Gate oxide
Voltage
Metadata
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- Landing Page
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- OA Status
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All OpenAlex metadata
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https://doi.org/10.1016/j.sse.2024.109031Digital Object Identifier
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Defects in polysilicon channel: Insight from first principles and multi-scale modellingWork title
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articleOpenAlex work type
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enPrimary language
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2024Year of publication
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2024-11-24Full publication date if available
- Authors
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Rita Maji, Tommaso Rollo, Shruba Gangopadhyay, Eleonora Luppi, Elena Degoli, F. Nardi, Luca Larcher, Milan PešićList of authors in order
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https://doi.org/10.1016/j.sse.2024.109031Publisher landing page
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hybridOpen access status per OpenAlex
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https://doi.org/10.1016/j.sse.2024.109031Direct OA link when available
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Polysilicon depletion effect, Scale (ratio), Channel (broadcasting), Materials science, Computer science, Engineering physics, Engineering, Electrical engineering, Telecommunications, Geography, Cartography, Transistor, Gate oxide, VoltageTop concepts (fields/topics) attached by OpenAlex
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| abstract_inverted_index.how | 164, 190 |
| abstract_inverted_index.the | 7, 52, 72, 102, 115, 138, 145, 148 |
| abstract_inverted_index.use | 46 |
| abstract_inverted_index.TFTs | 129 |
| abstract_inverted_index.With | 0 |
| abstract_inverted_index.fast | 179 |
| abstract_inverted_index.from | 167 |
| abstract_inverted_index.help | 100 |
| abstract_inverted_index.make | 36 |
| abstract_inverted_index.show | 163 |
| abstract_inverted_index.such | 76 |
| abstract_inverted_index.that | 84 |
| abstract_inverted_index.them | 37 |
| abstract_inverted_index.then | 92 |
| abstract_inverted_index.this | 110, 160, 193 |
| abstract_inverted_index.with | 32, 106, 198 |
| abstract_inverted_index.(DFT) | 123 |
| abstract_inverted_index.Their | 28 |
| abstract_inverted_index.agree | 197 |
| abstract_inverted_index.exert | 85 |
| abstract_inverted_index.field | 8 |
| abstract_inverted_index.grain | 79 |
| abstract_inverted_index.known | 151 |
| abstract_inverted_index.merit | 134 |
| abstract_inverted_index.novel | 103 |
| abstract_inverted_index.paper | 161 |
| abstract_inverted_index.their | 125 |
| abstract_inverted_index.these | 98 |
| abstract_inverted_index.using | 119, 137 |
| abstract_inverted_index.vital | 39 |
| abstract_inverted_index.would | 99 |
| abstract_inverted_index.(GBs), | 81 |
| abstract_inverted_index.(TFTs) | 25 |
| abstract_inverted_index.demand | 2 |
| abstract_inverted_index.device | 94, 176, 184 |
| abstract_inverted_index.enable | 178 |
| abstract_inverted_index.impact | 126, 149 |
| abstract_inverted_index.theory | 122 |
| abstract_inverted_index.unlike | 60 |
| abstract_inverted_index.voids, | 78 |
| abstract_inverted_index.Poly-Si | 68 |
| abstract_inverted_index.account | 144 |
| abstract_inverted_index.channel | 53 |
| abstract_inverted_index.circuit | 66 |
| abstract_inverted_index.defects | 75 |
| abstract_inverted_index.density | 120 |
| abstract_inverted_index.devices | 105 |
| abstract_inverted_index.display | 15 |
| abstract_inverted_index.element | 40 |
| abstract_inverted_index.figures | 132 |
| abstract_inverted_index.lighter | 152 |
| abstract_inverted_index.outputs | 191 |
| abstract_inverted_index.poly-Si | 128 |
| abstract_inverted_index.predict | 174 |
| abstract_inverted_index.process | 146, 196 |
| abstract_inverted_index.silicon | 49 |
| abstract_inverted_index.various | 20 |
| abstract_inverted_index.Ginestra | 139 |
| abstract_inverted_index.advanced | 42 |
| abstract_inverted_index.assessed | 136 |
| abstract_inverted_index.changes, | 188 |
| abstract_inverted_index.context, | 111 |
| abstract_inverted_index.devices, | 11 |
| abstract_inverted_index.enabling | 12 |
| abstract_inverted_index.engineer | 101 |
| abstract_inverted_index.flexible | 17 |
| abstract_inverted_index.material | 54, 165, 187 |
| abstract_inverted_index.presence | 73 |
| abstract_inverted_index.reliable | 181 |
| abstract_inverted_index.specific | 56 |
| abstract_inverted_index.studied. | 158 |
| abstract_inverted_index.superior | 107 |
| abstract_inverted_index.systems. | 44 |
| abstract_inverted_index.(Poly-Si) | 50 |
| abstract_inverted_index.essential | 4 |
| abstract_inverted_index.influence | 87 |
| abstract_inverted_index.modelling | 195 |
| abstract_inverted_index.platform. | 142 |
| abstract_inverted_index.processes | 35 |
| abstract_inverted_index.thin-film | 23 |
| abstract_inverted_index.boundaries | 80 |
| abstract_inverted_index.calculated | 118 |
| abstract_inverted_index.components | 5 |
| abstract_inverted_index.electrical | 89 |
| abstract_inverted_index.electronic | 10, 43, 175 |
| abstract_inverted_index.evaluation | 182 |
| abstract_inverted_index.functional | 121 |
| abstract_inverted_index.impurities | 153 |
| abstract_inverted_index.increasing | 1 |
| abstract_inverted_index.industrial | 21 |
| abstract_inverted_index.integrated | 65 |
| abstract_inverted_index.properties | 113, 166 |
| abstract_inverted_index.simulation | 141 |
| abstract_inverted_index.Fundamental | 112 |
| abstract_inverted_index.detrimental | 86 |
| abstract_inverted_index.effectively | 171 |
| abstract_inverted_index.fabrication | 34 |
| abstract_inverted_index.multi-scale | 194 |
| abstract_inverted_index.performance | 130 |
| abstract_inverted_index.sensitivity | 185 |
| abstract_inverted_index.technology, | 16 |
| abstract_inverted_index.transistors | 24 |
| abstract_inverted_index.versatility | 29 |
| abstract_inverted_index.virtualized | 172 |
| abstract_inverted_index.advancements | 13 |
| abstract_inverted_index.applications | 59 |
| abstract_inverted_index.conductivity | 90 |
| abstract_inverted_index.electronics, | 18 |
| abstract_inverted_index.experiments. | 199 |
| abstract_inverted_index.performance, | 177 |
| abstract_inverted_index.performance. | 95 |
| abstract_inverted_index.reliability. | 108 |
| abstract_inverted_index.significant. | 27 |
| abstract_inverted_index.transistors. | 67 |
| abstract_inverted_index.Understanding | 96 |
| abstract_inverted_index.applications, | 22 |
| abstract_inverted_index.characterized | 70 |
| abstract_inverted_index.compatibility | 31 |
| abstract_inverted_index.dislocations, | 83 |
| abstract_inverted_index.comprehensively | 157 |
| abstract_inverted_index.contaminations, | 147 |
| abstract_inverted_index.low-temperature | 33 |
| abstract_inverted_index.polycrystalline | 48 |
| abstract_inverted_index.high-performance | 64 |
| abstract_inverted_index.single-crystal/epitaxial | 61 |
| cited_by_percentile_year | |
| countries_distinct_count | 0 |
| institutions_distinct_count | 8 |
| citation_normalized_percentile.value | 0.24026293 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |