Solid-State Electronics • Vol 223
Defects in polysilicon channel: Insight from first principles and multi-scale modelling
November 2024 • Rita Maji, Tommaso Rollo, Shruba Gangopadhyay, Eleonora Luppi, Elena Degoli, F. Nardi, Luca Larcher, Milan Pešić
With increasing demand for essential components in the field of electronic devices, enabling advancements in display technology, flexible electronics, and various industrial applications, thin-film transistors (TFTs) are significant. Their versatility and compatibility with low-temperature fabrication processes make them a vital element in advanced electronic systems. The use of polycrystalline silicon (Poly-Si) as the channel material is specific to TFT applications unlike single-crystal/epitaxial Si in high-perf…