Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy Article Swipe

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Steve Johnston , Dirk Jordan , Dana B. Kern , Dylan J. Colvin , Kristopher O. Davis , Helio Moutinho , George F. Kroeger ·

YOU? · · 2023 · Open Access · · DOI: https://doi.org/10.1016/j.solmat.2023.112527

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Deep-level transient spectroscopy Materials science Heterojunction Silicon Optoelectronics Passivation Crystalline silicon Wafer Amorphous silicon Photoluminescence Depletion region Amorphous solid Analytical Chemistry (journal) Layer (electronics) Semiconductor Chemistry Nanotechnology Crystallography Chromatography

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Type: article
Language: en
Landing Page: https://doi.org/10.1016/j.solmat.2023.112527
OA Status: green
Cited By: 4
References: 40
Related Works: 10
OpenAlex ID: https://openalex.org/W4386501071

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DOI: https://doi.org/10.1016/j.solmat.2023.112527

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Title: Degradation-related defect level in weathered silicon heterojunction modules characterized by deep level transient spectroscopy

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Type: article

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Language: en

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Publication year: 2023

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Publication date: 2023-09-07

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Authors: Steve Johnston, Dirk Jordan, Dana B. Kern, Dylan J. Colvin, Kristopher O. Davis, Helio Moutinho, George F. Kroeger

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Landing page: https://doi.org/10.1016/j.solmat.2023.112527

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Concepts: Deep-level transient spectroscopy, Materials science, Heterojunction, Silicon, Optoelectronics, Passivation, Crystalline silicon, Wafer, Amorphous silicon, Photoluminescence, Depletion region, Amorphous solid, Analytical Chemistry (journal), Layer (electronics), Semiconductor, Chemistry, Nanotechnology, Crystallography, Chromatography

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Cited by: 4

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