Design and performance analysis of Si-SiGe heterostructure based double gate feedback FET Article Swipe
Subir Das
,
Sai Shirov Katta
,
Pushp Raj
,
Jawar Singh
,
Pramod Kumar Tiwari
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1088/1402-4896/ad1a31
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1088/1402-4896/ad1a31
The design and performance analysis of a Si-SiGe heterostructure-based double gate feedback field-effect transistor (HDG FBFET) are presented in this paper. The proposed HDG FBFET is capable of providing high on current (3 × 10 −4 A/ μ m) with a large I ON / I OFF ratio (3 × 10 11 ) and is scalable up to 20 nm channel length. Its exceptionally steep switching characteristics (SS < 1 mV/decade) and ability to switch ON/OFF at lower gate voltage due to the use of smaller band-gap material (Si 1− x Ge x ) in channel-2 and drain regions make it suitable for use in low power applications. A significant hysteresis window of 4.99 V is also achieved by the device, which can be extremely helpful for memory applications. Moreover, a comprehensive investigation of the nature of hysteresis in relation to the different device parameters has also been carried out. The designing of the device structure and all of the electrical performance characterization have been done using the Sentaurus TCAD tool.
Related Topics
Concepts
Materials science
Heterojunction
Optoelectronics
Transistor
Hysteresis
Scalability
Channel (broadcasting)
Silicon-germanium
Characterization (materials science)
Voltage
Computer science
Electrical engineering
Nanotechnology
Silicon
Physics
Condensed matter physics
Telecommunications
Engineering
Database
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1088/1402-4896/ad1a31
- OA Status
- hybrid
- Cited By
- 6
- References
- 36
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4390586823
All OpenAlex metadata
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https://openalex.org/W4390586823Canonical identifier for this work in OpenAlex
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https://doi.org/10.1088/1402-4896/ad1a31Digital Object Identifier
- Title
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Design and performance analysis of Si-SiGe heterostructure based double gate feedback FETWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2024Year of publication
- Publication date
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2024-01-04Full publication date if available
- Authors
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Subir Das, Sai Shirov Katta, Pushp Raj, Jawar Singh, Pramod Kumar TiwariList of authors in order
- Landing page
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https://doi.org/10.1088/1402-4896/ad1a31Publisher landing page
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YesWhether a free full text is available
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hybridOpen access status per OpenAlex
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https://doi.org/10.1088/1402-4896/ad1a31Direct OA link when available
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Materials science, Heterojunction, Optoelectronics, Transistor, Hysteresis, Scalability, Channel (broadcasting), Silicon-germanium, Characterization (materials science), Voltage, Computer science, Electrical engineering, Nanotechnology, Silicon, Physics, Condensed matter physics, Telecommunications, Engineering, DatabaseTop concepts (fields/topics) attached by OpenAlex
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6Total citation count in OpenAlex
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2025: 5, 2024: 1Per-year citation counts (last 5 years)
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10Other works algorithmically related by OpenAlex
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