Dynamic deformation modeling for the interfaces of growth, etching, and deposition under switching flow in TSSG-SiC growth Article Swipe

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Xinjun Liu , Zhicheng Guan , Tomoaki Furusho , Kentaro Kutsukake , Shunta Harada , Toru Ujihara ·

YOU? · · 2025 · Open Access · · DOI: https://doi.org/10.1039/d5ce00314h

A flatter growth interface and a more acceptable growth rate can be achieved with the imbalanced switching flow for long-term SiC crystal growth.

Related Topics

Etching (Microfabrication)

Concepts

Flow (mathematics) Etching (microfabrication) Materials science Deformation (meteorology) Optoelectronics Nanotechnology Composite material Mechanics Physics Layer (electronics)

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Type: article
Language: en
Landing Page: https://doi.org/10.1039/d5ce00314h
PDF: https://pubs.rsc.org/en/content/articlepdf/2025/ce/d5ce00314h
OA Status: hybrid
Cited By: 1
References: 21
Related Works: 10
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DOI: https://doi.org/10.1039/d5ce00314h

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Title: Dynamic deformation modeling for the interfaces of growth, etching, and deposition under switching flow in TSSG-SiC growth

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Type: article

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Language: en

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Publication year: 2025

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Publication date: 2025-01-01

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Authors: Xinjun Liu, Zhicheng Guan, Tomoaki Furusho, Kentaro Kutsukake, Shunta Harada, Toru Ujihara

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Landing page: https://doi.org/10.1039/d5ce00314h

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PDF URL: https://pubs.rsc.org/en/content/articlepdf/2025/ce/d5ce00314h

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Concepts: Flow (mathematics), Etching (microfabrication), Materials science, Deformation (meteorology), Optoelectronics, Nanotechnology, Composite material, Mechanics, Physics, Layer (electronics)

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Cited by: 1

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