Effect of Oxide Thickness on GaN-based Double Gate MOSFETs Article Swipe

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YOU? · · 2020 · Open Access · · DOI: https://doi.org/10.53799/ajse.v16i2.72

The effect of oxide thickness (EOT) on GaN-based double gate (DG) MOSFETs have been explored for low power switching device. The gate length (LG) of 8 nm with 4 nm underlap is considered. The device is turned off and on for gate voltage (VGS) of 0 V and 1 V, respectively. The effective oxide thickness (EOT) is varied from 1 nm to 0.5 nm and the device performance is evaluated. For EOT = 0.5 nm, the OFF-state current (IOFF), subthreshold slope (SS) and drain induced barrier lowering (DIBL) are obtained 2.97×10-8 A/μm, 69.67 mV/dec and 21.753 mV/V, respectively. These results indicate that, it is possible to minimize short channel effects (SCEs) by using smaller value of EOT.

Related Topics

Electrical Engineering

Transistor

Engineering

Metallurgy

Concepts

Materials science Drain-induced barrier lowering Subthreshold slope Optoelectronics Oxide Threshold voltage Gate oxide Subthreshold conduction MOSFET Equivalent oxide thickness Voltage Electrical engineering Transistor Engineering Metallurgy

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Type: article
Language: en
Landing Page: https://doi.org/10.53799/ajse.v16i2.72
PDF: http://ajse.aiub.edu/index.php/ajse/article/download/72/53
OA Status: diamond
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DOI: https://doi.org/10.53799/ajse.v16i2.72

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Title: Effect of Oxide Thickness on GaN-based Double Gate MOSFETs

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Language: en

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Publication year: 2020

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Publication date: 2020-01-06

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Authors: Safayet Ahmed, Md. Tanvir Hasan

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Landing page: https://doi.org/10.53799/ajse.v16i2.72

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Concepts: Materials science, Drain-induced barrier lowering, Subthreshold slope, Optoelectronics, Oxide, Threshold voltage, Gate oxide, Subthreshold conduction, MOSFET, Equivalent oxide thickness, Voltage, Electrical engineering, Transistor, Engineering, Metallurgy

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