Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching Article Swipe

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Tetramethylammonium hydroxide Materials science Etching (microfabrication) Heterojunction Optoelectronics Transistor Threshold voltage Surface finish Surface roughness Gate dielectric Dielectric Voltage Layer (electronics) Nanotechnology Electrical engineering Composite material Engineering

Yu Li , Guohao Yu , Heng Wang , Jiaan Zhou , Zheming Wang , Runxian Xing , S.L. Lu , Yang An , Bingliang Zhang , Yong Cai , Zhongming Zeng , Baoshun Zhang ·

YOU? · · 2023 · Open Access · · DOI: https://doi.org/10.35848/1882-0786/ad1199 · OA: W4389274689

The effect of tetramethylammonium hydroxide (TMAH) treatment prior to gate dielectric deposition on the performance of recessed-gate AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) was investigated. Through the use of TMAH wet etching, a low roughness etched surface of 0.173 nm was obtained. The capacitance–voltage characteristics of MIS heterostructures showed that the interface states reduced by one order of magnitude. When the temperature was increased to 473 K, the treated MIS-HEMTs delivered a small threshold voltage shift (Δ V TH ) of ∼−0.53 V. From the dynamic measurement, the Δ V TH obtained without treatment was observed more severely (∼−1 V) when compared to the treated one (∼−0.01 V).