Electrical properties of Si-doped GaN prepared using pulsed sputtering Article Swipe
Yasuaki Arakawa
,
Kohei Ueno
,
Hideyuki Imabeppu
,
Atsushi Kobayashi
,
Jitsuo Ohta
,
Hiroshi Fujioka
·
YOU?
·
· 2017
· Open Access
·
· DOI: https://doi.org/10.1063/1.4975056
YOU?
·
· 2017
· Open Access
·
· DOI: https://doi.org/10.1063/1.4975056
In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range between 1.5 × 1016 and 2.0 × 1020 cm−3. For lightly Si-doped GaN ([Si] = 2.1 × 1016 cm−3), the room temperature (RT) electron mobility was as high as 1008 cm2 V−1 s−1, which was dominantly limited by polar optical phonon scattering. Moreover, we found that heavily Si-doped GaN prepared using PSD exhibited an RT mobility as high as 110 cm2 V−1 s−1 at an electron concentration of 2 × 1020 cm−3, which indicated that the resistivity of this film was almost as small as those of typical transparent conductive oxides such as indium tin oxide. At lower temperatures, the electron mobility increased to 1920 cm2 V−1 s−1 at 136 K, and the temperature dependence was well explained by conventional scattering models. These results indicate that Si-doped GaN prepared using PSD is promising not only for the fabrication of GaN-based power devices but also for use as epitaxial transparent electrode materials for nitride based optical devices.
Related Topics
Concepts
Materials science
Wurtzite crystal structure
Doping
Electron mobility
Optoelectronics
Sputtering
Electrical resistivity and conductivity
Wide-bandgap semiconductor
Sputter deposition
Indium
Thin film
Analytical Chemistry (journal)
Nanotechnology
Zinc
Chemistry
Metallurgy
Engineering
Chromatography
Electrical engineering
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1063/1.4975056
- https://aip.scitation.org/doi/pdf/10.1063/1.4975056
- OA Status
- hybrid
- Cited By
- 68
- References
- 24
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2582760665
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W2582760665Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1063/1.4975056Digital Object Identifier
- Title
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Electrical properties of Si-doped GaN prepared using pulsed sputteringWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2017Year of publication
- Publication date
-
2017-01-23Full publication date if available
- Authors
-
Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi FujiokaList of authors in order
- Landing page
-
https://doi.org/10.1063/1.4975056Publisher landing page
- PDF URL
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https://aip.scitation.org/doi/pdf/10.1063/1.4975056Direct link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
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hybridOpen access status per OpenAlex
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https://aip.scitation.org/doi/pdf/10.1063/1.4975056Direct OA link when available
- Concepts
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Materials science, Wurtzite crystal structure, Doping, Electron mobility, Optoelectronics, Sputtering, Electrical resistivity and conductivity, Wide-bandgap semiconductor, Sputter deposition, Indium, Thin film, Analytical Chemistry (journal), Nanotechnology, Zinc, Chemistry, Metallurgy, Engineering, Chromatography, Electrical engineeringTop concepts (fields/topics) attached by OpenAlex
- Cited by
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68Total citation count in OpenAlex
- Citations by year (recent)
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2025: 4, 2024: 8, 2023: 10, 2022: 13, 2021: 7Per-year citation counts (last 5 years)
- References (count)
-
24Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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