Element-specific, non-destructive profiling of layered heterostructures Article Swipe

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Nicolò D'Anna , Jamie Bragg , Elizabeth Skoropata , Nazaret Ortiz Hernández , Anne McConnell , Matthew Clemence , Hiroki Ueda , Procopios Constantinou , Kieran Spruce , Taylor J. Z. Stock , Sarah Fearn , Steven R. Schofield , Neil J. Curson , Darío Ferreira Sánchez , Daniel Grolimund , U. Staub , Guy Matmon , Simon Gerber , G. Aeppli ·

YOU? · · 2024 · Open Access · · DOI: https://doi.org/10.48550/arxiv.2410.00241

Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high energy X-ray photoemission spectroscopy, and secondary ion mass spectrometry. However, profiling thin layers with nm or sub-nm thickness, e.g. atomically thin dopant layers ($δ$-layers), of impurities required for modulation doping and spin-based quantum and classical information technologies is more challenging. Here, we present theory and experiment showing how resonant-contrast X-ray reflectometry meets this challenge. The technique takes advantage of the change in the scattering factor of atoms as their core level resonances are scanned by varying the X-ray energy. We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $δ$-layers within silicon, and show that the sub-nm electronic thickness of the $δ$-layers corresponds to sub-nm chemical thickness. In combination with X-ray fluorescence imaging, this enables non-destructive three-dimensional characterization of nano-structured quantum devices. Due to the strong resonances at soft X-ray wavelengths, the technique is also ideally suited to characterize layered quantum materials, such as cuprates or the topical infinite-layer nickelates.

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Profiling (computer programming) Materials science Heterojunction Element (criminal law) Composite material Computer science Optoelectronics Political science Programming language Law

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Type: preprint
Language: en
Landing Page: http://arxiv.org/abs/2410.00241
PDF: https://arxiv.org/pdf/2410.00241
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DOI: https://doi.org/10.48550/arxiv.2410.00241

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Title: Element-specific, non-destructive profiling of layered heterostructures

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Publication year: 2024

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Publication date: 2024-09-30

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Authors: Nicolò D'Anna, Jamie Bragg, Elizabeth Skoropata, Nazaret Ortiz Hernández, Anne McConnell, Matthew Clemence, Hiroki Ueda, Procopios Constantinou, Kieran Spruce, Taylor J. Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Darío Ferreira Sánchez, Daniel Grolimund, U. Staub, Guy Matmon, Simon Gerber, G. Aeppli

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Landing page: https://arxiv.org/abs/2410.00241

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Concepts: Profiling (computer programming), Materials science, Heterojunction, Element (criminal law), Composite material, Computer science, Optoelectronics, Political science, Programming language, Law

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abstract_inverted_index.secondary	61
abstract_inverted_index.technique	111, 191
abstract_inverted_index.thickness	157
abstract_inverted_index.atomically	75
abstract_inverted_index.capability	138
abstract_inverted_index.challenge.	109
abstract_inverted_index.consisting	34
abstract_inverted_index.electronic	156
abstract_inverted_index.experiment	101
abstract_inverted_index.impurities	81
abstract_inverted_index.materials,	200
abstract_inverted_index.modulation	84
abstract_inverted_index.relatively	24
abstract_inverted_index.resonances	127, 185
abstract_inverted_index.scattering	119
abstract_inverted_index.spin-based	87
abstract_inverted_index.thickness,	73
abstract_inverted_index.thickness.	165
abstract_inverted_index.$δ$-layers	148, 160
abstract_inverted_index.Fabrication	0
abstract_inverted_index.combination	167
abstract_inverted_index.corresponds	161
abstract_inverted_index.demonstrate	136
abstract_inverted_index.information	91
abstract_inverted_index.nickelates.	208
abstract_inverted_index.thicknesses	42
abstract_inverted_index.challenging.	95
abstract_inverted_index.characterize	27, 197
abstract_inverted_index.diffraction,	54
abstract_inverted_index.fluorescence	170
abstract_inverted_index.profilometry	144
abstract_inverted_index.technologies	92
abstract_inverted_index.wavelengths,	189
abstract_inverted_index.applications.	20
abstract_inverted_index.photoemission	58
abstract_inverted_index.reflectometry	106
abstract_inverted_index.semiconductor	2, 39
abstract_inverted_index.sophisticated	49
abstract_inverted_index.spectrometry.	64
abstract_inverted_index.spectroscopy,	59
abstract_inverted_index.($δ$-layers),	79
abstract_inverted_index.infinite-layer	207
abstract_inverted_index.nano-structured	178
abstract_inverted_index.non-destructive	143, 174
abstract_inverted_index.straightforward	25
abstract_inverted_index.characterization	176
abstract_inverted_index.heterostructures	3, 33
abstract_inverted_index.resonant-contrast	104
abstract_inverted_index.three-dimensional	175
abstract_inverted_index.element-selective,	142
cited_by_percentile_year
countries_distinct_count	0
institutions_distinct_count	19
citation_normalized_percentile