Emitter Patterning for IBC-SHJ Solar Cell Using Laser Hard Mask Writing and Self-aligning Article Swipe
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· 2015
· Open Access
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· DOI: https://doi.org/10.4229/eupvsec20152015-2av.2.36
· OA: W2896966172
We present a novel process scheme for emitter patterning for IBC-SHJ solar cells, employing laser based single step patterning of a dielectric hard mask, and self-alignment for further depositions. With the presented process sequence, we aim at developing a simple, lithography free and contactless emitter patterning method for industrial applications. Laser writing of the hard mask is performed using a picosecond laser operating at 355 nm to reduce the laser damage at the surface of the samples, which then allows for short damage etch durations. We demonstrate the feasibility of this process scheme for IBC-SHJ solar cells. Proof-of-concept cells on planar substrates show a short circuit current density of 33.2 mA/cm2, but still suffer from both low open circuit voltage and low fill factor, the latter being mainly due to a high series resistance. At the current stage of development, analysis of the etched contact groove reveals a rough surface in the overlap zone of the laser pulses, which very likely causes recombination and reduces both open-circuit voltage and fill factor.
