Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature Article Swipe
O. Daoudi
,
Emmanuel Nolot
,
Mélanie Dartois
,
M. Tessaire
,
F. Aussenac
,
Nicolas Bernier
,
Nicolas Gauthier
,
N. Rochat
,
F. Fillot
,
Van‐Hoan Le
,
H. Renevier
,
G. Navarro
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1002/pssr.202300448
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1002/pssr.202300448
Ge‐rich GeSbTe chalcogenide alloys have gained significant attention in the field of phase‐change materials due to their remarkable thermal stability and thus their suitability for integration in nonvolatile memories targeting embedded automotive applications. Herein, the effects of different encapsulating materials on the evolution and on the crystallization kinetic of N‐doped Ge‐rich GeSbTe films are focused on. These films are annealed with temperatures compatible with the back‐end‐of‐line of the complementary metal‐oxide‐semiconductor (CMOS) fabrication. First, it shows how the encapsulation layer thickness should be tuned in order to protect the layer from oxidation and at the same time to avoid delamination phenomena. TaN, C, TiN, SiC, and SiN used as encapsulating layers are compared. The segregation and crystallization of Ge‐rich GeSbTe alloys appear more homogeneous in the case of C, TiN, and SiC. On the contrary, the effects of an interfacial heterogeneous nucleation in the case of TaN and SiN are observed. It results in a different final morphology of the chalcogenide layer after annealing depending on the encapsulation, with different grain sizes and kinetic of phase separation.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1002/pssr.202300448
- https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/pssr.202300448
- OA Status
- hybrid
- Cited By
- 1
- References
- 30
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4391375387
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Raw OpenAlex JSON
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https://openalex.org/W4391375387Canonical identifier for this work in OpenAlex
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https://doi.org/10.1002/pssr.202300448Digital Object Identifier
- Title
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Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High TemperatureWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2024Year of publication
- Publication date
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2024-01-30Full publication date if available
- Authors
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O. Daoudi, Emmanuel Nolot, Mélanie Dartois, M. Tessaire, F. Aussenac, Nicolas Bernier, Nicolas Gauthier, N. Rochat, F. Fillot, Van‐Hoan Le, H. Renevier, G. NavarroList of authors in order
- Landing page
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https://doi.org/10.1002/pssr.202300448Publisher landing page
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https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/pssr.202300448Direct link to full text PDF
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YesWhether a free full text is available
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hybridOpen access status per OpenAlex
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https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/pssr.202300448Direct OA link when available
- Concepts
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Encapsulation (networking), Phase change, Materials science, Engineering physics, Nanotechnology, Computer science, Physics, Computer networkTop concepts (fields/topics) attached by OpenAlex
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1Total citation count in OpenAlex
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10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.suitability | 23 |
| abstract_inverted_index.chalcogenide | 2, 159 |
| abstract_inverted_index.delamination | 98 |
| abstract_inverted_index.fabrication. | 71 |
| abstract_inverted_index.temperatures | 61 |
| abstract_inverted_index.applications. | 32 |
| abstract_inverted_index.complementary | 68 |
| abstract_inverted_index.encapsulating | 38, 108 |
| abstract_inverted_index.encapsulation | 77 |
| abstract_inverted_index.heterogeneous | 139 |
| abstract_inverted_index.encapsulation, | 166 |
| abstract_inverted_index.phase‐change | 12 |
| abstract_inverted_index.crystallization | 46, 115 |
| abstract_inverted_index.back‐end‐of‐line | 65 |
| abstract_inverted_index.metal‐oxide‐semiconductor | 69 |
| cited_by_percentile_year.max | 95 |
| cited_by_percentile_year.min | 91 |
| countries_distinct_count | 1 |
| institutions_distinct_count | 12 |
| citation_normalized_percentile.value | 0.40595479 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |