Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devices Article Swipe
YOU?
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· 2021
· Open Access
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· DOI: https://doi.org/10.48550/arxiv.2103.04622
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK ~ 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.
Related Topics
- Type
- preprint
- Language
- en
- Landing Page
- http://arxiv.org/abs/2103.04622
- https://arxiv.org/pdf/2103.04622
- OA Status
- green
- Cited By
- 5
- References
- 8
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W3133571401
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W3133571401Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.48550/arxiv.2103.04622Digital Object Identifier
- Title
-
Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devicesWork title
- Type
-
preprintOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2021Year of publication
- Publication date
-
2021-03-08Full publication date if available
- Authors
-
Anže Mraz, Rok Venturini, Michele Diego, Andrej Kranjec, Damjan Svetin, Yaroslav A. Gerasimenko, Vitomir Sever, Ian A. Mihailovic, Jan Ravnik, Igor Vaskivskyi, Maria D’Antuono, Daniela Stornaiulo, F. Tafuri, Dimitrios Kazazis, Yasin Ekinci, D. MihailovićList of authors in order
- Landing page
-
https://arxiv.org/abs/2103.04622Publisher landing page
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https://arxiv.org/pdf/2103.04622Direct link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
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greenOpen access status per OpenAlex
- OA URL
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https://arxiv.org/pdf/2103.04622Direct OA link when available
- Concepts
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Non-volatile memory, Metastability, Charge (physics), Materials science, Optoelectronics, Computer science, Physics, Quantum mechanicsTop concepts (fields/topics) attached by OpenAlex
- Cited by
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5Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 1, 2023: 2, 2022: 1, 2021: 1Per-year citation counts (last 5 years)
- References (count)
-
8Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.range | 188 |
| abstract_inverted_index.small | 175 |
| abstract_inverted_index.speed | 182, 236 |
| abstract_inverted_index.store | 25, 70, 135 |
| abstract_inverted_index.their | 205 |
| abstract_inverted_index.<11 | 184 |
| abstract_inverted_index.bubble | 168 |
| abstract_inverted_index.change | 57 |
| abstract_inverted_index.charge | 35, 76 |
| abstract_inverted_index.costly | 65 |
| abstract_inverted_index.device | 112 |
| abstract_inverted_index.domain | 127, 154 |
| abstract_inverted_index.energy | 44, 177, 239 |
| abstract_inverted_index.memory | 11, 54, 58, 110, 223 |
| abstract_inverted_index.orders | 193 |
| abstract_inverted_index.ratio, | 212 |
| abstract_inverted_index.relies | 114 |
| abstract_inverted_index.simple | 206 |
| abstract_inverted_index.states | 77 |
| abstract_inverted_index.stored | 93 |
| abstract_inverted_index.within | 146 |
| abstract_inverted_index.crystal | 66, 118, 133 |
| abstract_inverted_index.current | 36 |
| abstract_inverted_index.device, | 149 |
| abstract_inverted_index.devices | 16, 59, 171, 219 |
| abstract_inverted_index.domains | 23 |
| abstract_inverted_index.melting | 119 |
| abstract_inverted_index.memory. | 169 |
| abstract_inverted_index.present | 8, 99 |
| abstract_inverted_index.quantum | 79 |
| abstract_inverted_index.require | 234 |
| abstract_inverted_index.(<2.2 | 178 |
| abstract_inverted_index.(<250 | 198 |
| abstract_inverted_index.However, | 27 |
| abstract_inverted_index.Together | 203 |
| abstract_inverted_index.approach | 103 |
| abstract_inverted_index.emerging | 226 |
| abstract_inverted_index.example, | 82 |
| abstract_inverted_index.fJ/bit), | 179 |
| abstract_inverted_index.inherent | 29 |
| abstract_inverted_index.magnetic | 1, 5, 13, 22, 167 |
| abstract_inverted_index.memories | 49 |
| abstract_inverted_index.ordering | 155 |
| abstract_inverted_index.paradigm | 224 |
| abstract_inverted_index.rapidly. | 96 |
| abstract_inverted_index.scanning | 139 |
| abstract_inverted_index.storage, | 2 |
| abstract_inverted_index.switched | 85 |
| abstract_inverted_index.computing | 231 |
| abstract_inverted_index.contrast, | 73 |
| abstract_inverted_index.different | 102 |
| abstract_inverted_index.introduce | 220 |
| abstract_inverted_index.magnitude | 195 |
| abstract_inverted_index.mechanism | 161 |
| abstract_inverted_index.racetrack | 10 |
| abstract_inverted_index.radically | 101 |
| abstract_inverted_index.resulting | 125 |
| abstract_inverted_index.switching | 15, 39, 176, 181, 211 |
| abstract_inverted_index.tunneling | 140 |
| abstract_inverted_index.ultrafast | 180 |
| abstract_inverted_index.ultrahigh | 235 |
| abstract_inverted_index.anisotropy | 14 |
| abstract_inverted_index.converting | 32 |
| abstract_inverted_index.dissipates | 95 |
| abstract_inverted_index.electronic | 75, 117, 126, 132 |
| abstract_inverted_index.endurance, | 217 |
| abstract_inverted_index.equivalent | 165 |
| abstract_inverted_index.impressive | 216 |
| abstract_inverted_index.microscopy | 141 |
| abstract_inverted_index.multiprobe | 138 |
| abstract_inverted_index.protection | 122 |
| abstract_inverted_index.relatively | 64 |
| abstract_inverted_index.resistance | 210 |
| abstract_inverted_index.structural | 67 |
| abstract_inverted_index.efficiency, | 90 |
| abstract_inverted_index.fabrication | 214 |
| abstract_inverted_index.fundamental | 41 |
| abstract_inverted_index.information | 94 |
| abstract_inverted_index.limitations | 42 |
| abstract_inverted_index.memristors, | 52 |
| abstract_inverted_index.operational | 148, 187 |
| abstract_inverted_index.temperature | 197 |
| abstract_inverted_index.topological | 121 |
| abstract_inverted_index.Non-volatile | 0 |
| abstract_inverted_index.applications | 232 |
| abstract_inverted_index.consumption. | 45, 240 |
| abstract_inverted_index.conventional | 74 |
| abstract_inverted_index.dislocations | 151 |
| abstract_inverted_index.femtoseconds | 87 |
| abstract_inverted_index.inefficiency | 30 |
| abstract_inverted_index.information. | 26, 71, 136 |
| abstract_inverted_index.non-magnetic | 47 |
| abstract_inverted_index.non-volatile | 48 |
| abstract_inverted_index.energetically | 63 |
| abstract_inverted_index.ferroelectric | 53 |
| abstract_inverted_index.magnetization | 38 |
| abstract_inverted_index.metastability | 20, 158 |
| abstract_inverted_index.topologically | 164 |
| abstract_inverted_index.configurations | 128 |
| abstract_inverted_index.cryo-computing | 227 |
| abstract_inverted_index.functionality, | 207 |
| abstract_inverted_index.rearrangements | 68 |
| abstract_inverted_index.straightforward | 213 |
| abstract_inverted_index.two-dimensional | 131 |
| abstract_inverted_index.high-performance | 230 |
| abstract_inverted_index.microscopically, | 145 |
| abstract_inverted_index.charge-configuration | 109 |
| abstract_inverted_index.information-carrying | 34 |
| abstract_inverted_index.charge-injection-driven | 116 |
| cited_by_percentile_year | |
| countries_distinct_count | 0 |
| institutions_distinct_count | 16 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/7 |
| sustainable_development_goals[0].score | 0.9100000262260437 |
| sustainable_development_goals[0].display_name | Affordable and clean energy |
| citation_normalized_percentile |