ACS Applied Materials & Interfaces • Vol 13 • No 2
Engineering the Threshold Switching Response of Nb<sub>2</sub>O<sub>5</sub>-Based Memristors by Ti Doping
January 2021 • Shimul Kanti Nath, Sanjoy Kumar Nandi, Thomas Ratcliff, R. G. Elliman
Two terminal metal-oxide-metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching and current-controlled negative differential resistance (NDR) characteristics of cross-point devices fabricated from undoped Nb<sub>2</sub>O<sub>5</sub> and Ti-doped Nb<sub>2</sub>O<sub>5</sub> and show that doping offers an effective means of engineering the device re…