Enhanced etch characteristics of EUV PR masked SiON through the ion beam grid pulsing technique Article Swipe
Hae In Kwon
,
Yun Jong Jang
,
Kyoung Chan Kim
,
Hong Seong Gil
,
Ju‐Young Kim
,
Seunghyong Ryu
,
Do Seong Pyun
,
Dae Whan Kim
,
Wonse Park
,
Ji Yeon Lee
,
Jin Woo Park
,
S.W. Park
,
Geun Young Yeom
·
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1038/s41598-025-04632-x
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1038/s41598-025-04632-x
EUV lithography technology, applied in nano-patterning processes, enables the creation of fine patterns below 10 nm. However, issues still remain due to the reduced etch selectivity and increased line edge roughness (LER) caused by the thin thickness and weakness of organic EUV photoresist (PR). In this study, research was conducted to improve the low etch selectivity and high LER using a novel grid pulsed ion beam etching technique. In this system, Ar/H 2 plasma is generated in the inductively coupled plasma (ICP) source, and the Ar + /H x + ion beam is irradiated while fluorocarbon gas is injected into the process chamber. Grid pulsing technique increases the etch selectivity of SiON over EUV PR while improving LER. With a 50% duty ratio and optimal gas flow conditions (Ar:H 2 ratio = 1:3 to the ion beam source and CF 4 :C 4 F 8 = 1:1), the etch selectivity of SiON over EUV PR approached ∞ while maintaining the LER close to the reference.
Related Topics
Concepts
Extreme ultraviolet lithography
Materials science
Photoresist
Selectivity
Focused ion beam
Optoelectronics
Ion
Ion beam
Etching (microfabrication)
Irradiation
Analytical Chemistry (journal)
Chemistry
Nanotechnology
Physics
Layer (electronics)
Catalysis
Organic chemistry
Biochemistry
Nuclear physics
Chromatography
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1038/s41598-025-04632-x
- https://www.nature.com/articles/s41598-025-04632-x.pdf
- OA Status
- gold
- References
- 35
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4411102357
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W4411102357Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1038/s41598-025-04632-xDigital Object Identifier
- Title
-
Enhanced etch characteristics of EUV PR masked SiON through the ion beam grid pulsing techniqueWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2025Year of publication
- Publication date
-
2025-06-06Full publication date if available
- Authors
-
Hae In Kwon, Yun Jong Jang, Kyoung Chan Kim, Hong Seong Gil, Ju‐Young Kim, Seunghyong Ryu, Do Seong Pyun, Dae Whan Kim, Wonse Park, Ji Yeon Lee, Jin Woo Park, S.W. Park, Geun Young YeomList of authors in order
- Landing page
-
https://doi.org/10.1038/s41598-025-04632-xPublisher landing page
- PDF URL
-
https://www.nature.com/articles/s41598-025-04632-x.pdfDirect link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
-
https://www.nature.com/articles/s41598-025-04632-x.pdfDirect OA link when available
- Concepts
-
Extreme ultraviolet lithography, Materials science, Photoresist, Selectivity, Focused ion beam, Optoelectronics, Ion, Ion beam, Etching (microfabrication), Irradiation, Analytical Chemistry (journal), Chemistry, Nanotechnology, Physics, Layer (electronics), Catalysis, Organic chemistry, Biochemistry, Nuclear physics, ChromatographyTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
0Total citation count in OpenAlex
- References (count)
-
35Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
Full payload
| id | https://openalex.org/W4411102357 |
|---|---|
| doi | https://doi.org/10.1038/s41598-025-04632-x |
| ids.doi | https://doi.org/10.1038/s41598-025-04632-x |
| ids.pmid | https://pubmed.ncbi.nlm.nih.gov/40481140 |
| ids.openalex | https://openalex.org/W4411102357 |
| fwci | 0.0 |
| type | article |
| title | Enhanced etch characteristics of EUV PR masked SiON through the ion beam grid pulsing technique |
| biblio.issue | 1 |
| biblio.volume | 15 |
| biblio.last_page | 19920 |
| biblio.first_page | 19920 |
| topics[0].id | https://openalex.org/T11338 |
| topics[0].field.id | https://openalex.org/fields/22 |
| topics[0].field.display_name | Engineering |
| topics[0].score | 1.0 |
| topics[0].domain.id | https://openalex.org/domains/3 |
| topics[0].domain.display_name | Physical Sciences |
| topics[0].subfield.id | https://openalex.org/subfields/2208 |
| topics[0].subfield.display_name | Electrical and Electronic Engineering |
| topics[0].display_name | Advancements in Photolithography Techniques |
| topics[1].id | https://openalex.org/T12166 |
| topics[1].field.id | https://openalex.org/fields/22 |
| topics[1].field.display_name | Engineering |
| topics[1].score | 0.9990000128746033 |
| topics[1].domain.id | https://openalex.org/domains/3 |
| topics[1].domain.display_name | Physical Sciences |
| topics[1].subfield.id | https://openalex.org/subfields/2206 |
| topics[1].subfield.display_name | Computational Mechanics |
| topics[1].display_name | Ion-surface interactions and analysis |
| topics[2].id | https://openalex.org/T14117 |
| topics[2].field.id | https://openalex.org/fields/22 |
| topics[2].field.display_name | Engineering |
| topics[2].score | 0.9988999962806702 |
| topics[2].domain.id | https://openalex.org/domains/3 |
| topics[2].domain.display_name | Physical Sciences |
| topics[2].subfield.id | https://openalex.org/subfields/2208 |
| topics[2].subfield.display_name | Electrical and Electronic Engineering |
| topics[2].display_name | Integrated Circuits and Semiconductor Failure Analysis |
| is_xpac | False |
| apc_list.value | 1890 |
| apc_list.currency | EUR |
| apc_list.value_usd | 2190 |
| apc_paid.value | 1890 |
| apc_paid.currency | EUR |
| apc_paid.value_usd | 2190 |
| concepts[0].id | https://openalex.org/C162996421 |
| concepts[0].level | 2 |
| concepts[0].score | 0.9099120497703552 |
| concepts[0].wikidata | https://www.wikidata.org/wiki/Q371965 |
| concepts[0].display_name | Extreme ultraviolet lithography |
| concepts[1].id | https://openalex.org/C192562407 |
| concepts[1].level | 0 |
| concepts[1].score | 0.6560062170028687 |
| concepts[1].wikidata | https://www.wikidata.org/wiki/Q228736 |
| concepts[1].display_name | Materials science |
| concepts[2].id | https://openalex.org/C134406635 |
| concepts[2].level | 3 |
| concepts[2].score | 0.5339378714561462 |
| concepts[2].wikidata | https://www.wikidata.org/wiki/Q1439684 |
| concepts[2].display_name | Photoresist |
| concepts[3].id | https://openalex.org/C118792377 |
| concepts[3].level | 3 |
| concepts[3].score | 0.5139316916465759 |
| concepts[3].wikidata | https://www.wikidata.org/wiki/Q108584245 |
| concepts[3].display_name | Selectivity |
| concepts[4].id | https://openalex.org/C161866238 |
| concepts[4].level | 3 |
| concepts[4].score | 0.5128970146179199 |
| concepts[4].wikidata | https://www.wikidata.org/wiki/Q258563 |
| concepts[4].display_name | Focused ion beam |
| concepts[5].id | https://openalex.org/C49040817 |
| concepts[5].level | 1 |
| concepts[5].score | 0.4925020635128021 |
| concepts[5].wikidata | https://www.wikidata.org/wiki/Q193091 |
| concepts[5].display_name | Optoelectronics |
| concepts[6].id | https://openalex.org/C145148216 |
| concepts[6].level | 2 |
| concepts[6].score | 0.47498100996017456 |
| concepts[6].wikidata | https://www.wikidata.org/wiki/Q36496 |
| concepts[6].display_name | Ion |
| concepts[7].id | https://openalex.org/C50774322 |
| concepts[7].level | 3 |
| concepts[7].score | 0.474393367767334 |
| concepts[7].wikidata | https://www.wikidata.org/wiki/Q644248 |
| concepts[7].display_name | Ion beam |
| concepts[8].id | https://openalex.org/C100460472 |
| concepts[8].level | 3 |
| concepts[8].score | 0.42525696754455566 |
| concepts[8].wikidata | https://www.wikidata.org/wiki/Q2368605 |
| concepts[8].display_name | Etching (microfabrication) |
| concepts[9].id | https://openalex.org/C111337013 |
| concepts[9].level | 2 |
| concepts[9].score | 0.4221556484699249 |
| concepts[9].wikidata | https://www.wikidata.org/wiki/Q2737837 |
| concepts[9].display_name | Irradiation |
| concepts[10].id | https://openalex.org/C113196181 |
| concepts[10].level | 2 |
| concepts[10].score | 0.4178248941898346 |
| concepts[10].wikidata | https://www.wikidata.org/wiki/Q485223 |
| concepts[10].display_name | Analytical Chemistry (journal) |
| concepts[11].id | https://openalex.org/C185592680 |
| concepts[11].level | 0 |
| concepts[11].score | 0.2732691764831543 |
| concepts[11].wikidata | https://www.wikidata.org/wiki/Q2329 |
| concepts[11].display_name | Chemistry |
| concepts[12].id | https://openalex.org/C171250308 |
| concepts[12].level | 1 |
| concepts[12].score | 0.18782594799995422 |
| concepts[12].wikidata | https://www.wikidata.org/wiki/Q11468 |
| concepts[12].display_name | Nanotechnology |
| concepts[13].id | https://openalex.org/C121332964 |
| concepts[13].level | 0 |
| concepts[13].score | 0.061714887619018555 |
| concepts[13].wikidata | https://www.wikidata.org/wiki/Q413 |
| concepts[13].display_name | Physics |
| concepts[14].id | https://openalex.org/C2779227376 |
| concepts[14].level | 2 |
| concepts[14].score | 0.05570605397224426 |
| concepts[14].wikidata | https://www.wikidata.org/wiki/Q6505497 |
| concepts[14].display_name | Layer (electronics) |
| concepts[15].id | https://openalex.org/C161790260 |
| concepts[15].level | 2 |
| concepts[15].score | 0.0 |
| concepts[15].wikidata | https://www.wikidata.org/wiki/Q82264 |
| concepts[15].display_name | Catalysis |
| concepts[16].id | https://openalex.org/C178790620 |
| concepts[16].level | 1 |
| concepts[16].score | 0.0 |
| concepts[16].wikidata | https://www.wikidata.org/wiki/Q11351 |
| concepts[16].display_name | Organic chemistry |
| concepts[17].id | https://openalex.org/C55493867 |
| concepts[17].level | 1 |
| concepts[17].score | 0.0 |
| concepts[17].wikidata | https://www.wikidata.org/wiki/Q7094 |
| concepts[17].display_name | Biochemistry |
| concepts[18].id | https://openalex.org/C185544564 |
| concepts[18].level | 1 |
| concepts[18].score | 0.0 |
| concepts[18].wikidata | https://www.wikidata.org/wiki/Q81197 |
| concepts[18].display_name | Nuclear physics |
| concepts[19].id | https://openalex.org/C43617362 |
| concepts[19].level | 1 |
| concepts[19].score | 0.0 |
| concepts[19].wikidata | https://www.wikidata.org/wiki/Q170050 |
| concepts[19].display_name | Chromatography |
| keywords[0].id | https://openalex.org/keywords/extreme-ultraviolet-lithography |
| keywords[0].score | 0.9099120497703552 |
| keywords[0].display_name | Extreme ultraviolet lithography |
| keywords[1].id | https://openalex.org/keywords/materials-science |
| keywords[1].score | 0.6560062170028687 |
| keywords[1].display_name | Materials science |
| keywords[2].id | https://openalex.org/keywords/photoresist |
| keywords[2].score | 0.5339378714561462 |
| keywords[2].display_name | Photoresist |
| keywords[3].id | https://openalex.org/keywords/selectivity |
| keywords[3].score | 0.5139316916465759 |
| keywords[3].display_name | Selectivity |
| keywords[4].id | https://openalex.org/keywords/focused-ion-beam |
| keywords[4].score | 0.5128970146179199 |
| keywords[4].display_name | Focused ion beam |
| keywords[5].id | https://openalex.org/keywords/optoelectronics |
| keywords[5].score | 0.4925020635128021 |
| keywords[5].display_name | Optoelectronics |
| keywords[6].id | https://openalex.org/keywords/ion |
| keywords[6].score | 0.47498100996017456 |
| keywords[6].display_name | Ion |
| keywords[7].id | https://openalex.org/keywords/ion-beam |
| keywords[7].score | 0.474393367767334 |
| keywords[7].display_name | Ion beam |
| keywords[8].id | https://openalex.org/keywords/etching |
| keywords[8].score | 0.42525696754455566 |
| keywords[8].display_name | Etching (microfabrication) |
| keywords[9].id | https://openalex.org/keywords/irradiation |
| keywords[9].score | 0.4221556484699249 |
| keywords[9].display_name | Irradiation |
| keywords[10].id | https://openalex.org/keywords/analytical-chemistry |
| keywords[10].score | 0.4178248941898346 |
| keywords[10].display_name | Analytical Chemistry (journal) |
| keywords[11].id | https://openalex.org/keywords/chemistry |
| keywords[11].score | 0.2732691764831543 |
| keywords[11].display_name | Chemistry |
| keywords[12].id | https://openalex.org/keywords/nanotechnology |
| keywords[12].score | 0.18782594799995422 |
| keywords[12].display_name | Nanotechnology |
| keywords[13].id | https://openalex.org/keywords/physics |
| keywords[13].score | 0.061714887619018555 |
| keywords[13].display_name | Physics |
| keywords[14].id | https://openalex.org/keywords/layer |
| keywords[14].score | 0.05570605397224426 |
| keywords[14].display_name | Layer (electronics) |
| language | en |
| locations[0].id | doi:10.1038/s41598-025-04632-x |
| locations[0].is_oa | True |
| locations[0].source.id | https://openalex.org/S196734849 |
| locations[0].source.issn | 2045-2322 |
| locations[0].source.type | journal |
| locations[0].source.is_oa | True |
| locations[0].source.issn_l | 2045-2322 |
| locations[0].source.is_core | True |
| locations[0].source.is_in_doaj | True |
| locations[0].source.display_name | Scientific Reports |
| locations[0].source.host_organization | https://openalex.org/P4310319908 |
| locations[0].source.host_organization_name | Nature Portfolio |
| locations[0].source.host_organization_lineage | https://openalex.org/P4310319908, https://openalex.org/P4310319965 |
| locations[0].source.host_organization_lineage_names | Nature Portfolio, Springer Nature |
| locations[0].license | cc-by |
| locations[0].pdf_url | https://www.nature.com/articles/s41598-025-04632-x.pdf |
| locations[0].version | publishedVersion |
| locations[0].raw_type | journal-article |
| locations[0].license_id | https://openalex.org/licenses/cc-by |
| locations[0].is_accepted | True |
| locations[0].is_published | True |
| locations[0].raw_source_name | Scientific Reports |
| locations[0].landing_page_url | https://doi.org/10.1038/s41598-025-04632-x |
| locations[1].id | pmid:40481140 |
| locations[1].is_oa | False |
| locations[1].source.id | https://openalex.org/S4306525036 |
| locations[1].source.issn | |
| locations[1].source.type | repository |
| locations[1].source.is_oa | False |
| locations[1].source.issn_l | |
| locations[1].source.is_core | False |
| locations[1].source.is_in_doaj | False |
| locations[1].source.display_name | PubMed |
| locations[1].source.host_organization | https://openalex.org/I1299303238 |
| locations[1].source.host_organization_name | National Institutes of Health |
| locations[1].source.host_organization_lineage | https://openalex.org/I1299303238 |
| locations[1].license | |
| locations[1].pdf_url | |
| locations[1].version | publishedVersion |
| locations[1].raw_type | |
| locations[1].license_id | |
| locations[1].is_accepted | True |
| locations[1].is_published | True |
| locations[1].raw_source_name | Scientific reports |
| locations[1].landing_page_url | https://pubmed.ncbi.nlm.nih.gov/40481140 |
| locations[2].id | pmh:oai:doaj.org/article:2e3d66aa180c4e52b9d0d9aa534e2624 |
| locations[2].is_oa | False |
| locations[2].source.id | https://openalex.org/S4306401280 |
| locations[2].source.issn | |
| locations[2].source.type | repository |
| locations[2].source.is_oa | False |
| locations[2].source.issn_l | |
| locations[2].source.is_core | False |
| locations[2].source.is_in_doaj | False |
| locations[2].source.display_name | DOAJ (DOAJ: Directory of Open Access Journals) |
| locations[2].source.host_organization | |
| locations[2].source.host_organization_name | |
| locations[2].license | |
| locations[2].pdf_url | |
| locations[2].version | submittedVersion |
| locations[2].raw_type | article |
| locations[2].license_id | |
| locations[2].is_accepted | False |
| locations[2].is_published | False |
| locations[2].raw_source_name | Scientific Reports, Vol 15, Iss 1, Pp 1-11 (2025) |
| locations[2].landing_page_url | https://doaj.org/article/2e3d66aa180c4e52b9d0d9aa534e2624 |
| locations[3].id | pmh:oai:pubmedcentral.nih.gov:12144267 |
| locations[3].is_oa | True |
| locations[3].source.id | https://openalex.org/S2764455111 |
| locations[3].source.issn | |
| locations[3].source.type | repository |
| locations[3].source.is_oa | False |
| locations[3].source.issn_l | |
| locations[3].source.is_core | False |
| locations[3].source.is_in_doaj | False |
| locations[3].source.display_name | PubMed Central |
| locations[3].source.host_organization | https://openalex.org/I1299303238 |
| locations[3].source.host_organization_name | National Institutes of Health |
| locations[3].source.host_organization_lineage | https://openalex.org/I1299303238 |
| locations[3].license | other-oa |
| locations[3].pdf_url | |
| locations[3].version | submittedVersion |
| locations[3].raw_type | Text |
| locations[3].license_id | https://openalex.org/licenses/other-oa |
| locations[3].is_accepted | False |
| locations[3].is_published | False |
| locations[3].raw_source_name | Sci Rep |
| locations[3].landing_page_url | https://www.ncbi.nlm.nih.gov/pmc/articles/12144267 |
| indexed_in | crossref, doaj, pubmed |
| authorships[0].author.id | https://openalex.org/A5111234209 |
| authorships[0].author.orcid | |
| authorships[0].author.display_name | Hae In Kwon |
| authorships[0].countries | KR |
| authorships[0].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[0].affiliations[0].raw_affiliation_string | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[0].institutions[0].id | https://openalex.org/I848706 |
| authorships[0].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[0].institutions[0].type | education |
| authorships[0].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[0].institutions[0].country_code | KR |
| authorships[0].institutions[0].display_name | Sungkyunkwan University |
| authorships[0].author_position | first |
| authorships[0].raw_author_name | Hae In Kwon |
| authorships[0].is_corresponding | False |
| authorships[0].raw_affiliation_strings | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[1].author.id | https://openalex.org/A5110690332 |
| authorships[1].author.orcid | |
| authorships[1].author.display_name | Yun Jong Jang |
| authorships[1].countries | KR |
| authorships[1].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[1].affiliations[0].raw_affiliation_string | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[1].institutions[0].id | https://openalex.org/I848706 |
| authorships[1].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[1].institutions[0].type | education |
| authorships[1].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[1].institutions[0].country_code | KR |
| authorships[1].institutions[0].display_name | Sungkyunkwan University |
| authorships[1].author_position | middle |
| authorships[1].raw_author_name | Yun Jong Jang |
| authorships[1].is_corresponding | False |
| authorships[1].raw_affiliation_strings | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[2].author.id | https://openalex.org/A5030473494 |
| authorships[2].author.orcid | |
| authorships[2].author.display_name | Kyoung Chan Kim |
| authorships[2].countries | KR |
| authorships[2].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[2].affiliations[0].raw_affiliation_string | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[2].institutions[0].id | https://openalex.org/I848706 |
| authorships[2].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[2].institutions[0].type | education |
| authorships[2].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[2].institutions[0].country_code | KR |
| authorships[2].institutions[0].display_name | Sungkyunkwan University |
| authorships[2].author_position | middle |
| authorships[2].raw_author_name | Kyoung Chan Kim |
| authorships[2].is_corresponding | False |
| authorships[2].raw_affiliation_strings | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[3].author.id | https://openalex.org/A5067672559 |
| authorships[3].author.orcid | |
| authorships[3].author.display_name | Hong Seong Gil |
| authorships[3].countries | KR |
| authorships[3].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[3].affiliations[0].raw_affiliation_string | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[3].institutions[0].id | https://openalex.org/I848706 |
| authorships[3].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[3].institutions[0].type | education |
| authorships[3].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[3].institutions[0].country_code | KR |
| authorships[3].institutions[0].display_name | Sungkyunkwan University |
| authorships[3].author_position | middle |
| authorships[3].raw_author_name | Hong Seong Gil |
| authorships[3].is_corresponding | False |
| authorships[3].raw_affiliation_strings | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[4].author.id | https://openalex.org/A5100371864 |
| authorships[4].author.orcid | https://orcid.org/0000-0003-3841-8122 |
| authorships[4].author.display_name | Ju‐Young Kim |
| authorships[4].countries | KR |
| authorships[4].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[4].affiliations[0].raw_affiliation_string | Department of Photovoltaic System Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[4].institutions[0].id | https://openalex.org/I848706 |
| authorships[4].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[4].institutions[0].type | education |
| authorships[4].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[4].institutions[0].country_code | KR |
| authorships[4].institutions[0].display_name | Sungkyunkwan University |
| authorships[4].author_position | middle |
| authorships[4].raw_author_name | Ju Young Kim |
| authorships[4].is_corresponding | False |
| authorships[4].raw_affiliation_strings | Department of Photovoltaic System Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[5].author.id | https://openalex.org/A5024069939 |
| authorships[5].author.orcid | https://orcid.org/0000-0001-6127-760X |
| authorships[5].author.display_name | Seunghyong Ryu |
| authorships[5].countries | KR |
| authorships[5].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[5].affiliations[0].raw_affiliation_string | School of Chemical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[5].institutions[0].id | https://openalex.org/I848706 |
| authorships[5].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[5].institutions[0].type | education |
| authorships[5].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[5].institutions[0].country_code | KR |
| authorships[5].institutions[0].display_name | Sungkyunkwan University |
| authorships[5].author_position | middle |
| authorships[5].raw_author_name | Seong Hyun Ryu |
| authorships[5].is_corresponding | False |
| authorships[5].raw_affiliation_strings | School of Chemical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[6].author.id | https://openalex.org/A5115562633 |
| authorships[6].author.orcid | |
| authorships[6].author.display_name | Do Seong Pyun |
| authorships[6].countries | KR |
| authorships[6].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[6].affiliations[0].raw_affiliation_string | Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[6].institutions[0].id | https://openalex.org/I848706 |
| authorships[6].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[6].institutions[0].type | education |
| authorships[6].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[6].institutions[0].country_code | KR |
| authorships[6].institutions[0].display_name | Sungkyunkwan University |
| authorships[6].author_position | middle |
| authorships[6].raw_author_name | Do Seong Pyun |
| authorships[6].is_corresponding | False |
| authorships[6].raw_affiliation_strings | Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[7].author.id | https://openalex.org/A5063040701 |
| authorships[7].author.orcid | https://orcid.org/0009-0002-5137-3563 |
| authorships[7].author.display_name | Dae Whan Kim |
| authorships[7].countries | KR |
| authorships[7].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[7].affiliations[0].raw_affiliation_string | Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[7].institutions[0].id | https://openalex.org/I848706 |
| authorships[7].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[7].institutions[0].type | education |
| authorships[7].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[7].institutions[0].country_code | KR |
| authorships[7].institutions[0].display_name | Sungkyunkwan University |
| authorships[7].author_position | middle |
| authorships[7].raw_author_name | Dae Whan Kim |
| authorships[7].is_corresponding | False |
| authorships[7].raw_affiliation_strings | Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[8].author.id | https://openalex.org/A5029877416 |
| authorships[8].author.orcid | https://orcid.org/0000-0002-2081-1156 |
| authorships[8].author.display_name | Wonse Park |
| authorships[8].countries | KR |
| authorships[8].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[8].affiliations[0].raw_affiliation_string | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[8].institutions[0].id | https://openalex.org/I848706 |
| authorships[8].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[8].institutions[0].type | education |
| authorships[8].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[8].institutions[0].country_code | KR |
| authorships[8].institutions[0].display_name | Sungkyunkwan University |
| authorships[8].author_position | middle |
| authorships[8].raw_author_name | Woo Chang Park |
| authorships[8].is_corresponding | False |
| authorships[8].raw_affiliation_strings | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[9].author.id | https://openalex.org/A5100405496 |
| authorships[9].author.orcid | https://orcid.org/0000-0002-2788-1392 |
| authorships[9].author.display_name | Ji Yeon Lee |
| authorships[9].countries | KR |
| authorships[9].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[9].affiliations[0].raw_affiliation_string | Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[9].institutions[0].id | https://openalex.org/I848706 |
| authorships[9].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[9].institutions[0].type | education |
| authorships[9].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[9].institutions[0].country_code | KR |
| authorships[9].institutions[0].display_name | Sungkyunkwan University |
| authorships[9].author_position | middle |
| authorships[9].raw_author_name | Ji Yeon Lee |
| authorships[9].is_corresponding | False |
| authorships[9].raw_affiliation_strings | Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. |
| authorships[10].author.id | https://openalex.org/A5109863842 |
| authorships[10].author.orcid | |
| authorships[10].author.display_name | Jin Woo Park |
| authorships[10].countries | KR |
| authorships[10].affiliations[0].institution_ids | https://openalex.org/I2250650973 |
| authorships[10].affiliations[0].raw_affiliation_string | Advanced Process Development, Semiconductor R&D Center, Samsung Electronics Co. Ltd., Hwaseong, 18448, Republic of Korea. |
| authorships[10].institutions[0].id | https://openalex.org/I2250650973 |
| authorships[10].institutions[0].ror | https://ror.org/04w3jy968 |
| authorships[10].institutions[0].type | company |
| authorships[10].institutions[0].lineage | https://openalex.org/I2250650973 |
| authorships[10].institutions[0].country_code | KR |
| authorships[10].institutions[0].display_name | Samsung (South Korea) |
| authorships[10].author_position | middle |
| authorships[10].raw_author_name | Jin Woo Park |
| authorships[10].is_corresponding | False |
| authorships[10].raw_affiliation_strings | Advanced Process Development, Semiconductor R&D Center, Samsung Electronics Co. Ltd., Hwaseong, 18448, Republic of Korea. |
| authorships[11].author.id | https://openalex.org/A5111301772 |
| authorships[11].author.orcid | |
| authorships[11].author.display_name | S.W. Park |
| authorships[11].countries | KR |
| authorships[11].affiliations[0].institution_ids | https://openalex.org/I2250650973 |
| authorships[11].affiliations[0].raw_affiliation_string | Advanced Process Development, Semiconductor R&D Center, Samsung Electronics Co. Ltd., Hwaseong, 18448, Republic of Korea. |
| authorships[11].institutions[0].id | https://openalex.org/I2250650973 |
| authorships[11].institutions[0].ror | https://ror.org/04w3jy968 |
| authorships[11].institutions[0].type | company |
| authorships[11].institutions[0].lineage | https://openalex.org/I2250650973 |
| authorships[11].institutions[0].country_code | KR |
| authorships[11].institutions[0].display_name | Samsung (South Korea) |
| authorships[11].author_position | middle |
| authorships[11].raw_author_name | Sang Wuk Park |
| authorships[11].is_corresponding | False |
| authorships[11].raw_affiliation_strings | Advanced Process Development, Semiconductor R&D Center, Samsung Electronics Co. Ltd., Hwaseong, 18448, Republic of Korea. |
| authorships[12].author.id | https://openalex.org/A5101865885 |
| authorships[12].author.orcid | |
| authorships[12].author.display_name | Geun Young Yeom |
| authorships[12].countries | KR |
| authorships[12].affiliations[0].institution_ids | https://openalex.org/I848706 |
| authorships[12].affiliations[0].raw_affiliation_string | Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. [email protected]. |
| authorships[12].affiliations[1].institution_ids | https://openalex.org/I848706 |
| authorships[12].affiliations[1].raw_affiliation_string | SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea. [email protected]. |
| authorships[12].affiliations[2].institution_ids | https://openalex.org/I848706 |
| authorships[12].affiliations[2].raw_affiliation_string | School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. [email protected]. |
| authorships[12].institutions[0].id | https://openalex.org/I848706 |
| authorships[12].institutions[0].ror | https://ror.org/04q78tk20 |
| authorships[12].institutions[0].type | education |
| authorships[12].institutions[0].lineage | https://openalex.org/I848706 |
| authorships[12].institutions[0].country_code | KR |
| authorships[12].institutions[0].display_name | Sungkyunkwan University |
| authorships[12].author_position | last |
| authorships[12].raw_author_name | Geun Young Yeom |
| authorships[12].is_corresponding | False |
| authorships[12].raw_affiliation_strings | Department of Semiconductor Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. [email protected]., SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea. [email protected]., School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea. [email protected]. |
| has_content.pdf | True |
| has_content.grobid_xml | True |
| is_paratext | False |
| open_access.is_oa | True |
| open_access.oa_url | https://www.nature.com/articles/s41598-025-04632-x.pdf |
| open_access.oa_status | gold |
| open_access.any_repository_has_fulltext | False |
| created_date | 2025-10-10T00:00:00 |
| display_name | Enhanced etch characteristics of EUV PR masked SiON through the ion beam grid pulsing technique |
| has_fulltext | False |
| is_retracted | False |
| updated_date | 2025-11-06T03:46:38.306776 |
| primary_topic.id | https://openalex.org/T11338 |
| primary_topic.field.id | https://openalex.org/fields/22 |
| primary_topic.field.display_name | Engineering |
| primary_topic.score | 1.0 |
| primary_topic.domain.id | https://openalex.org/domains/3 |
| primary_topic.domain.display_name | Physical Sciences |
| primary_topic.subfield.id | https://openalex.org/subfields/2208 |
| primary_topic.subfield.display_name | Electrical and Electronic Engineering |
| primary_topic.display_name | Advancements in Photolithography Techniques |
| related_works | https://openalex.org/W4311181020, https://openalex.org/W2535465976, https://openalex.org/W1529090358, https://openalex.org/W4320036769, https://openalex.org/W4291746287, https://openalex.org/W2382573956, https://openalex.org/W2171786186, https://openalex.org/W1587443902, https://openalex.org/W1992059889, https://openalex.org/W4408506826 |
| cited_by_count | 0 |
| locations_count | 4 |
| best_oa_location.id | doi:10.1038/s41598-025-04632-x |
| best_oa_location.is_oa | True |
| best_oa_location.source.id | https://openalex.org/S196734849 |
| best_oa_location.source.issn | 2045-2322 |
| best_oa_location.source.type | journal |
| best_oa_location.source.is_oa | True |
| best_oa_location.source.issn_l | 2045-2322 |
| best_oa_location.source.is_core | True |
| best_oa_location.source.is_in_doaj | True |
| best_oa_location.source.display_name | Scientific Reports |
| best_oa_location.source.host_organization | https://openalex.org/P4310319908 |
| best_oa_location.source.host_organization_name | Nature Portfolio |
| best_oa_location.source.host_organization_lineage | https://openalex.org/P4310319908, https://openalex.org/P4310319965 |
| best_oa_location.source.host_organization_lineage_names | Nature Portfolio, Springer Nature |
| best_oa_location.license | cc-by |
| best_oa_location.pdf_url | https://www.nature.com/articles/s41598-025-04632-x.pdf |
| best_oa_location.version | publishedVersion |
| best_oa_location.raw_type | journal-article |
| best_oa_location.license_id | https://openalex.org/licenses/cc-by |
| best_oa_location.is_accepted | True |
| best_oa_location.is_published | True |
| best_oa_location.raw_source_name | Scientific Reports |
| best_oa_location.landing_page_url | https://doi.org/10.1038/s41598-025-04632-x |
| primary_location.id | doi:10.1038/s41598-025-04632-x |
| primary_location.is_oa | True |
| primary_location.source.id | https://openalex.org/S196734849 |
| primary_location.source.issn | 2045-2322 |
| primary_location.source.type | journal |
| primary_location.source.is_oa | True |
| primary_location.source.issn_l | 2045-2322 |
| primary_location.source.is_core | True |
| primary_location.source.is_in_doaj | True |
| primary_location.source.display_name | Scientific Reports |
| primary_location.source.host_organization | https://openalex.org/P4310319908 |
| primary_location.source.host_organization_name | Nature Portfolio |
| primary_location.source.host_organization_lineage | https://openalex.org/P4310319908, https://openalex.org/P4310319965 |
| primary_location.source.host_organization_lineage_names | Nature Portfolio, Springer Nature |
| primary_location.license | cc-by |
| primary_location.pdf_url | https://www.nature.com/articles/s41598-025-04632-x.pdf |
| primary_location.version | publishedVersion |
| primary_location.raw_type | journal-article |
| primary_location.license_id | https://openalex.org/licenses/cc-by |
| primary_location.is_accepted | True |
| primary_location.is_published | True |
| primary_location.raw_source_name | Scientific Reports |
| primary_location.landing_page_url | https://doi.org/10.1038/s41598-025-04632-x |
| publication_date | 2025-06-06 |
| publication_year | 2025 |
| referenced_works | https://openalex.org/W2100369477, https://openalex.org/W2104212315, https://openalex.org/W1991117616, https://openalex.org/W625991899, https://openalex.org/W2004358053, https://openalex.org/W1975343343, https://openalex.org/W2044223130, https://openalex.org/W2043602855, https://openalex.org/W2163083551, https://openalex.org/W2028550875, https://openalex.org/W2081720704, https://openalex.org/W2021434508, https://openalex.org/W2084572194, https://openalex.org/W2770335674, https://openalex.org/W2313777033, https://openalex.org/W2063355164, https://openalex.org/W2047971003, https://openalex.org/W2080416894, https://openalex.org/W2742668619, https://openalex.org/W2063069390, https://openalex.org/W3049550538, https://openalex.org/W3008879540, https://openalex.org/W4229774599, https://openalex.org/W2608445020, https://openalex.org/W4368341056, https://openalex.org/W3216169675, https://openalex.org/W2608270441, https://openalex.org/W4388312172, https://openalex.org/W1983818729, https://openalex.org/W2004116745, https://openalex.org/W2017107881, https://openalex.org/W2083864391, https://openalex.org/W4285242369, https://openalex.org/W2898731342, https://openalex.org/W2132905138 |
| referenced_works_count | 35 |
| abstract_inverted_index.+ | 87, 90 |
| abstract_inverted_index.2 | 73, 130 |
| abstract_inverted_index.4 | 141, 143 |
| abstract_inverted_index.8 | 145 |
| abstract_inverted_index.= | 132, 146 |
| abstract_inverted_index.F | 144 |
| abstract_inverted_index.a | 61, 120 |
| abstract_inverted_index.x | 89 |
| abstract_inverted_index./H | 88 |
| abstract_inverted_index.10 | 15 |
| abstract_inverted_index.:C | 142 |
| abstract_inverted_index.Ar | 86 |
| abstract_inverted_index.CF | 140 |
| abstract_inverted_index.In | 45, 69 |
| abstract_inverted_index.PR | 115, 155 |
| abstract_inverted_index.by | 34 |
| abstract_inverted_index.in | 5, 77 |
| abstract_inverted_index.is | 75, 93, 98 |
| abstract_inverted_index.of | 11, 40, 111, 151 |
| abstract_inverted_index.to | 22, 51, 134, 163 |
| abstract_inverted_index.1:3 | 133 |
| abstract_inverted_index.50% | 121 |
| abstract_inverted_index.EUV | 1, 42, 114, 154 |
| abstract_inverted_index.LER | 59, 161 |
| abstract_inverted_index.and | 27, 38, 57, 84, 124, 139 |
| abstract_inverted_index.due | 21 |
| abstract_inverted_index.gas | 97, 126 |
| abstract_inverted_index.ion | 65, 91, 136 |
| abstract_inverted_index.low | 54 |
| abstract_inverted_index.nm. | 16 |
| abstract_inverted_index.the | 9, 23, 35, 53, 78, 85, 101, 108, 135, 148, 160, 164 |
| abstract_inverted_index.was | 49 |
| abstract_inverted_index.∞ | 157 |
| abstract_inverted_index.Ar/H | 72 |
| abstract_inverted_index.Grid | 104 |
| abstract_inverted_index.LER. | 118 |
| abstract_inverted_index.SiON | 112, 152 |
| abstract_inverted_index.With | 119 |
| abstract_inverted_index.beam | 66, 92, 137 |
| abstract_inverted_index.duty | 122 |
| abstract_inverted_index.edge | 30 |
| abstract_inverted_index.etch | 25, 55, 109, 149 |
| abstract_inverted_index.fine | 12 |
| abstract_inverted_index.flow | 127 |
| abstract_inverted_index.grid | 63 |
| abstract_inverted_index.high | 58 |
| abstract_inverted_index.into | 100 |
| abstract_inverted_index.line | 29 |
| abstract_inverted_index.over | 113, 153 |
| abstract_inverted_index.thin | 36 |
| abstract_inverted_index.this | 46, 70 |
| abstract_inverted_index.(Ar:H | 129 |
| abstract_inverted_index.(ICP) | 82 |
| abstract_inverted_index.(LER) | 32 |
| abstract_inverted_index.(PR). | 44 |
| abstract_inverted_index.1:1), | 147 |
| abstract_inverted_index.below | 14 |
| abstract_inverted_index.close | 162 |
| abstract_inverted_index.novel | 62 |
| abstract_inverted_index.ratio | 123, 131 |
| abstract_inverted_index.still | 19 |
| abstract_inverted_index.using | 60 |
| abstract_inverted_index.while | 95, 116, 158 |
| abstract_inverted_index.caused | 33 |
| abstract_inverted_index.issues | 18 |
| abstract_inverted_index.plasma | 74, 81 |
| abstract_inverted_index.pulsed | 64 |
| abstract_inverted_index.remain | 20 |
| abstract_inverted_index.source | 138 |
| abstract_inverted_index.study, | 47 |
| abstract_inverted_index.applied | 4 |
| abstract_inverted_index.coupled | 80 |
| abstract_inverted_index.enables | 8 |
| abstract_inverted_index.etching | 67 |
| abstract_inverted_index.improve | 52 |
| abstract_inverted_index.optimal | 125 |
| abstract_inverted_index.organic | 41 |
| abstract_inverted_index.process | 102 |
| abstract_inverted_index.pulsing | 105 |
| abstract_inverted_index.reduced | 24 |
| abstract_inverted_index.source, | 83 |
| abstract_inverted_index.system, | 71 |
| abstract_inverted_index.Abstract | 0 |
| abstract_inverted_index.However, | 17 |
| abstract_inverted_index.chamber. | 103 |
| abstract_inverted_index.creation | 10 |
| abstract_inverted_index.injected | 99 |
| abstract_inverted_index.patterns | 13 |
| abstract_inverted_index.research | 48 |
| abstract_inverted_index.weakness | 39 |
| abstract_inverted_index.conducted | 50 |
| abstract_inverted_index.generated | 76 |
| abstract_inverted_index.improving | 117 |
| abstract_inverted_index.increased | 28 |
| abstract_inverted_index.increases | 107 |
| abstract_inverted_index.roughness | 31 |
| abstract_inverted_index.technique | 106 |
| abstract_inverted_index.thickness | 37 |
| abstract_inverted_index.approached | 156 |
| abstract_inverted_index.conditions | 128 |
| abstract_inverted_index.irradiated | 94 |
| abstract_inverted_index.processes, | 7 |
| abstract_inverted_index.reference. | 165 |
| abstract_inverted_index.technique. | 68 |
| abstract_inverted_index.inductively | 79 |
| abstract_inverted_index.lithography | 2 |
| abstract_inverted_index.maintaining | 159 |
| abstract_inverted_index.photoresist | 43 |
| abstract_inverted_index.selectivity | 26, 56, 110, 150 |
| abstract_inverted_index.technology, | 3 |
| abstract_inverted_index.fluorocarbon | 96 |
| abstract_inverted_index.nano-patterning | 6 |
| cited_by_percentile_year | |
| countries_distinct_count | 1 |
| institutions_distinct_count | 13 |
| citation_normalized_percentile.value | 0.21775911 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |