Fabrication of Anti-Reflective Composite Structures on Inverted Pyramids Using Inductively Coupled Plasma Etching Article Swipe
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· 2025
· Open Access
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· DOI: https://doi.org/10.3390/mi16050503
· OA: W4409921402
The anti-reflective properties of silicon surfaces play a pivotal role in determining the light absorption efficiency of various silicon-based optoelectronic devices, with surface micro-nanostructures emerging as a crucial technological approach for achieving enhanced anti-reflection. In this study, inverted pyramid structures were employed as the micron-scale framework, and micro-nano composite structures were successfully prepared using an inductively coupled plasma (ICP) etching system. This paper, mainly focused on the micro-nano fabrication, investigated the effects of gas flow rate ratio (SF6:O2:C4F8), ICP power, RF power, and etching time on the surface morphology and reflectance of the composite structures. The results demonstrate that the optimal anti-reflective micro-nano composite structure was achieved under the following conditions: SF6 flow rate of 18 sccm, O2 flow rate of 9 sccm, C4F8 flow rate of 4 sccm, ICP power of 300 W, RF power of 5 W, and etching time of 5 min. The average reflectivity of the prepared surface structure was as low as 1.86%.
