GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line Article Swipe
Yannick De Koninck
,
Charles Caër
,
Didit Yudistira
,
Marina Baryshnikova
,
Hüseyin Şar
,
Ping-Yi Hsieh
,
Saroj Kanta Patra
,
Nadezda Kuznetsova
,
Davide Colucci
,
Alexey Milenin
,
Andualem Ali Yimam
,
Geert Morthier
,
Dries Van Thourhout
,
Peter Verheyen
,
Marianna Pantouvaki
,
Bernardette Kunert
,
Joris Van Campenhout
·
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.48550/arxiv.2309.04473
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.48550/arxiv.2309.04473
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trapping. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.
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Metadata
- Type
- preprint
- Language
- en
- Landing Page
- http://arxiv.org/abs/2309.04473
- https://arxiv.org/pdf/2309.04473
- OA Status
- green
- Cited By
- 3
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4386643978
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4386643978Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.48550/arxiv.2309.04473Digital Object Identifier
- Title
-
GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot lineWork title
- Type
-
preprintOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2023Year of publication
- Publication date
-
2023-07-20Full publication date if available
- Authors
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Yannick De Koninck, Charles Caër, Didit Yudistira, Marina Baryshnikova, Hüseyin Şar, Ping-Yi Hsieh, Saroj Kanta Patra, Nadezda Kuznetsova, Davide Colucci, Alexey Milenin, Andualem Ali Yimam, Geert Morthier, Dries Van Thourhout, Peter Verheyen, Marianna Pantouvaki, Bernardette Kunert, Joris Van CampenhoutList of authors in order
- Landing page
-
https://arxiv.org/abs/2309.04473Publisher landing page
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https://arxiv.org/pdf/2309.04473Direct link to full text PDF
- Open access
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YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- OA URL
-
https://arxiv.org/pdf/2309.04473Direct OA link when available
- Concepts
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Optoelectronics, Materials science, Wafer, Laser, Diode, Photonics, CMOS, Silicon, Passivation, Optics, Nanotechnology, Physics, Layer (electronics)Top concepts (fields/topics) attached by OpenAlex
- Cited by
-
3Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 2, 2024: 1Per-year citation counts (last 5 years)
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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