GaN-on-diamond technology for next-generation power devices Article Swipe
Kangkai Fan
,
Jiachang Guo
,
Zihao Huang
,
Yu Xu
,
Zengli Huang
,
Wei Xu
,
Qi Wang
,
Qiubao Lin
,
Xiaohua Li
,
Hezhou Liu
,
Xinke Liu
·
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1007/s44275-024-00022-z
YOU?
·
· 2025
· Open Access
·
· DOI: https://doi.org/10.1007/s44275-024-00022-z
Gallium nitride (GaN)-based power devices have attracted significant attention due to their superior performance in high-frequency and high-power applications. However, the high-power density in these devices often induces severe self-heating effects (SHEs), which degrade their performance and reliability. Traditional thermal management solutions have struggled to efficiently dissipate heat, thereby leading to suboptimal real-world performance compared with theoretical predictions. To address this challenge, diamond has emerged as a highly promising substrate material for GaN devices, primarily due to its exceptional thermal conductivity and mechanical stability. GaN-on-diamond technology has a thermal conductivity of 2 200 W/m/K and it significantly enhances heat dissipation at the chip level. In this review, we provide a systematic overview of the two main integration methods for GaN and diamond: bonding and epitaxial growth techniques. Moreover, we elaborate on the impact of thermal boundary resistance (TBR) at the interface. According to the diffuse mismatch model, the TBR of GaN-on-diamond interfaces can be as low as 3 m 2 K/GW, which is markedly superior to silicon carbide substrates. In addition, novel techniques such as patterned growth, nanocrystalline diamond (NCD) capping films, and diamond passivation layers have been explored to further enhance thermal management capabilities. We also consider the roles of intermediate dielectric layers in reducing TBR, promoting diamond nucleation, and protecting the GaN layer. Thus, in this review, we summarize the current state of research into GaN-on-diamond technology, highlighting its revolutionary impact on thermal management for power devices and providing new pathways for the development of high-power GaN devices in the future.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1007/s44275-024-00022-z
- https://link.springer.com/content/pdf/10.1007/s44275-024-00022-z.pdf
- OA Status
- hybrid
- Cited By
- 3
- References
- 130
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4408969029
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W4408969029Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1007/s44275-024-00022-zDigital Object Identifier
- Title
-
GaN-on-diamond technology for next-generation power devicesWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2025Year of publication
- Publication date
-
2025-03-26Full publication date if available
- Authors
-
Kangkai Fan, Jiachang Guo, Zihao Huang, Yu Xu, Zengli Huang, Wei Xu, Qi Wang, Qiubao Lin, Xiaohua Li, Hezhou Liu, Xinke LiuList of authors in order
- Landing page
-
https://doi.org/10.1007/s44275-024-00022-zPublisher landing page
- PDF URL
-
https://link.springer.com/content/pdf/10.1007/s44275-024-00022-z.pdfDirect link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
hybridOpen access status per OpenAlex
- OA URL
-
https://link.springer.com/content/pdf/10.1007/s44275-024-00022-z.pdfDirect OA link when available
- Concepts
-
Diamond, Engineering physics, Optoelectronics, Materials science, Electrical engineering, Computer science, Engineering, MetallurgyTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
3Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 3Per-year citation counts (last 5 years)
- References (count)
-
130Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
Full payload
| id | https://openalex.org/W4408969029 |
|---|---|
| doi | https://doi.org/10.1007/s44275-024-00022-z |
| ids.doi | https://doi.org/10.1007/s44275-024-00022-z |
| ids.openalex | https://openalex.org/W4408969029 |
| fwci | 6.06469722 |
| type | article |
| title | GaN-on-diamond technology for next-generation power devices |
| biblio.issue | 1 |
| biblio.volume | 2 |
| biblio.last_page | |
| biblio.first_page | |
| topics[0].id | https://openalex.org/T10472 |
| topics[0].field.id | https://openalex.org/fields/22 |
| topics[0].field.display_name | Engineering |
| topics[0].score | 0.9997000098228455 |
| topics[0].domain.id | https://openalex.org/domains/3 |
| topics[0].domain.display_name | Physical Sciences |
| topics[0].subfield.id | https://openalex.org/subfields/2208 |
| topics[0].subfield.display_name | Electrical and Electronic Engineering |
| topics[0].display_name | Semiconductor materials and devices |
| topics[1].id | https://openalex.org/T10361 |
| topics[1].field.id | https://openalex.org/fields/22 |
| topics[1].field.display_name | Engineering |
| topics[1].score | 0.9997000098228455 |
| topics[1].domain.id | https://openalex.org/domains/3 |
| topics[1].domain.display_name | Physical Sciences |
| topics[1].subfield.id | https://openalex.org/subfields/2208 |
| topics[1].subfield.display_name | Electrical and Electronic Engineering |
| topics[1].display_name | Silicon Carbide Semiconductor Technologies |
| topics[2].id | https://openalex.org/T10099 |
| topics[2].field.id | https://openalex.org/fields/31 |
| topics[2].field.display_name | Physics and Astronomy |
| topics[2].score | 0.9997000098228455 |
| topics[2].domain.id | https://openalex.org/domains/3 |
| topics[2].domain.display_name | Physical Sciences |
| topics[2].subfield.id | https://openalex.org/subfields/3104 |
| topics[2].subfield.display_name | Condensed Matter Physics |
| topics[2].display_name | GaN-based semiconductor devices and materials |
| is_xpac | False |
| apc_list | |
| apc_paid | |
| concepts[0].id | https://openalex.org/C2776921476 |
| concepts[0].level | 2 |
| concepts[0].score | 0.648248016834259 |
| concepts[0].wikidata | https://www.wikidata.org/wiki/Q5283 |
| concepts[0].display_name | Diamond |
| concepts[1].id | https://openalex.org/C61696701 |
| concepts[1].level | 1 |
| concepts[1].score | 0.4614405035972595 |
| concepts[1].wikidata | https://www.wikidata.org/wiki/Q770766 |
| concepts[1].display_name | Engineering physics |
| concepts[2].id | https://openalex.org/C49040817 |
| concepts[2].level | 1 |
| concepts[2].score | 0.44692206382751465 |
| concepts[2].wikidata | https://www.wikidata.org/wiki/Q193091 |
| concepts[2].display_name | Optoelectronics |
| concepts[3].id | https://openalex.org/C192562407 |
| concepts[3].level | 0 |
| concepts[3].score | 0.44105225801467896 |
| concepts[3].wikidata | https://www.wikidata.org/wiki/Q228736 |
| concepts[3].display_name | Materials science |
| concepts[4].id | https://openalex.org/C119599485 |
| concepts[4].level | 1 |
| concepts[4].score | 0.363113671541214 |
| concepts[4].wikidata | https://www.wikidata.org/wiki/Q43035 |
| concepts[4].display_name | Electrical engineering |
| concepts[5].id | https://openalex.org/C41008148 |
| concepts[5].level | 0 |
| concepts[5].score | 0.3265966773033142 |
| concepts[5].wikidata | https://www.wikidata.org/wiki/Q21198 |
| concepts[5].display_name | Computer science |
| concepts[6].id | https://openalex.org/C127413603 |
| concepts[6].level | 0 |
| concepts[6].score | 0.2898804843425751 |
| concepts[6].wikidata | https://www.wikidata.org/wiki/Q11023 |
| concepts[6].display_name | Engineering |
| concepts[7].id | https://openalex.org/C191897082 |
| concepts[7].level | 1 |
| concepts[7].score | 0.06872379779815674 |
| concepts[7].wikidata | https://www.wikidata.org/wiki/Q11467 |
| concepts[7].display_name | Metallurgy |
| keywords[0].id | https://openalex.org/keywords/diamond |
| keywords[0].score | 0.648248016834259 |
| keywords[0].display_name | Diamond |
| keywords[1].id | https://openalex.org/keywords/engineering-physics |
| keywords[1].score | 0.4614405035972595 |
| keywords[1].display_name | Engineering physics |
| keywords[2].id | https://openalex.org/keywords/optoelectronics |
| keywords[2].score | 0.44692206382751465 |
| keywords[2].display_name | Optoelectronics |
| keywords[3].id | https://openalex.org/keywords/materials-science |
| keywords[3].score | 0.44105225801467896 |
| keywords[3].display_name | Materials science |
| keywords[4].id | https://openalex.org/keywords/electrical-engineering |
| keywords[4].score | 0.363113671541214 |
| keywords[4].display_name | Electrical engineering |
| keywords[5].id | https://openalex.org/keywords/computer-science |
| keywords[5].score | 0.3265966773033142 |
| keywords[5].display_name | Computer science |
| keywords[6].id | https://openalex.org/keywords/engineering |
| keywords[6].score | 0.2898804843425751 |
| keywords[6].display_name | Engineering |
| keywords[7].id | https://openalex.org/keywords/metallurgy |
| keywords[7].score | 0.06872379779815674 |
| keywords[7].display_name | Metallurgy |
| language | en |
| locations[0].id | doi:10.1007/s44275-024-00022-z |
| locations[0].is_oa | True |
| locations[0].source.id | https://openalex.org/S5407042856 |
| locations[0].source.issn | 3004-8680 |
| locations[0].source.type | journal |
| locations[0].source.is_oa | False |
| locations[0].source.issn_l | 3004-8680 |
| locations[0].source.is_core | False |
| locations[0].source.is_in_doaj | False |
| locations[0].source.display_name | Moore and More |
| locations[0].source.host_organization | |
| locations[0].source.host_organization_name | |
| locations[0].source.host_organization_lineage | |
| locations[0].license | cc-by |
| locations[0].pdf_url | https://link.springer.com/content/pdf/10.1007/s44275-024-00022-z.pdf |
| locations[0].version | publishedVersion |
| locations[0].raw_type | journal-article |
| locations[0].license_id | https://openalex.org/licenses/cc-by |
| locations[0].is_accepted | True |
| locations[0].is_published | True |
| locations[0].raw_source_name | Moore and More |
| locations[0].landing_page_url | https://doi.org/10.1007/s44275-024-00022-z |
| indexed_in | crossref |
| authorships[0].author.id | https://openalex.org/A5104223037 |
| authorships[0].author.orcid | |
| authorships[0].author.display_name | Kangkai Fan |
| authorships[0].author_position | first |
| authorships[0].raw_author_name | Kangkai Fan |
| authorships[0].is_corresponding | False |
| authorships[1].author.id | https://openalex.org/A5073593344 |
| authorships[1].author.orcid | |
| authorships[1].author.display_name | Jiachang Guo |
| authorships[1].author_position | middle |
| authorships[1].raw_author_name | Jiachang Guo |
| authorships[1].is_corresponding | False |
| authorships[2].author.id | https://openalex.org/A5035147571 |
| authorships[2].author.orcid | https://orcid.org/0009-0000-3304-0138 |
| authorships[2].author.display_name | Zihao Huang |
| authorships[2].author_position | middle |
| authorships[2].raw_author_name | Zihao Huang |
| authorships[2].is_corresponding | False |
| authorships[3].author.id | https://openalex.org/A5052693482 |
| authorships[3].author.orcid | https://orcid.org/0000-0003-3360-8998 |
| authorships[3].author.display_name | Yu Xu |
| authorships[3].author_position | middle |
| authorships[3].raw_author_name | Yu Xu |
| authorships[3].is_corresponding | False |
| authorships[4].author.id | https://openalex.org/A5101500631 |
| authorships[4].author.orcid | https://orcid.org/0000-0002-1201-3509 |
| authorships[4].author.display_name | Zengli Huang |
| authorships[4].author_position | middle |
| authorships[4].raw_author_name | Zengli Huang |
| authorships[4].is_corresponding | False |
| authorships[5].author.id | https://openalex.org/A5086073429 |
| authorships[5].author.orcid | https://orcid.org/0000-0001-8006-2399 |
| authorships[5].author.display_name | Wei Xu |
| authorships[5].author_position | middle |
| authorships[5].raw_author_name | Wei Xu |
| authorships[5].is_corresponding | False |
| authorships[6].author.id | https://openalex.org/A5054379544 |
| authorships[6].author.orcid | https://orcid.org/0000-0002-2821-0064 |
| authorships[6].author.display_name | Qi Wang |
| authorships[6].author_position | middle |
| authorships[6].raw_author_name | Qi Wang |
| authorships[6].is_corresponding | False |
| authorships[7].author.id | https://openalex.org/A5108266825 |
| authorships[7].author.orcid | |
| authorships[7].author.display_name | Qiubao Lin |
| authorships[7].author_position | middle |
| authorships[7].raw_author_name | Qiubao Lin |
| authorships[7].is_corresponding | False |
| authorships[8].author.id | https://openalex.org/A5100434134 |
| authorships[8].author.orcid | https://orcid.org/0000-0003-3664-7837 |
| authorships[8].author.display_name | Xiaohua Li |
| authorships[8].author_position | middle |
| authorships[8].raw_author_name | Xiaohua Li |
| authorships[8].is_corresponding | False |
| authorships[9].author.id | https://openalex.org/A5036524122 |
| authorships[9].author.orcid | https://orcid.org/0000-0002-3521-1970 |
| authorships[9].author.display_name | Hezhou Liu |
| authorships[9].author_position | middle |
| authorships[9].raw_author_name | Hezhou Liu |
| authorships[9].is_corresponding | False |
| authorships[10].author.id | https://openalex.org/A5110668486 |
| authorships[10].author.orcid | https://orcid.org/0000-0002-5367-6923 |
| authorships[10].author.display_name | Xinke Liu |
| authorships[10].author_position | last |
| authorships[10].raw_author_name | Xinke Liu |
| authorships[10].is_corresponding | False |
| has_content.pdf | True |
| has_content.grobid_xml | False |
| is_paratext | False |
| open_access.is_oa | True |
| open_access.oa_url | https://link.springer.com/content/pdf/10.1007/s44275-024-00022-z.pdf |
| open_access.oa_status | hybrid |
| open_access.any_repository_has_fulltext | False |
| created_date | 2025-10-10T00:00:00 |
| display_name | GaN-on-diamond technology for next-generation power devices |
| has_fulltext | False |
| is_retracted | False |
| updated_date | 2025-11-06T03:46:38.306776 |
| primary_topic.id | https://openalex.org/T10472 |
| primary_topic.field.id | https://openalex.org/fields/22 |
| primary_topic.field.display_name | Engineering |
| primary_topic.score | 0.9997000098228455 |
| primary_topic.domain.id | https://openalex.org/domains/3 |
| primary_topic.domain.display_name | Physical Sciences |
| primary_topic.subfield.id | https://openalex.org/subfields/2208 |
| primary_topic.subfield.display_name | Electrical and Electronic Engineering |
| primary_topic.display_name | Semiconductor materials and devices |
| related_works | https://openalex.org/W2899084033, https://openalex.org/W2748952813, https://openalex.org/W4404995717, https://openalex.org/W2016187641, https://openalex.org/W4404725684, https://openalex.org/W4246450666, https://openalex.org/W4388998267, https://openalex.org/W2898370298, https://openalex.org/W2137437058, https://openalex.org/W2383733224 |
| cited_by_count | 3 |
| counts_by_year[0].year | 2025 |
| counts_by_year[0].cited_by_count | 3 |
| locations_count | 1 |
| best_oa_location.id | doi:10.1007/s44275-024-00022-z |
| best_oa_location.is_oa | True |
| best_oa_location.source.id | https://openalex.org/S5407042856 |
| best_oa_location.source.issn | 3004-8680 |
| best_oa_location.source.type | journal |
| best_oa_location.source.is_oa | False |
| best_oa_location.source.issn_l | 3004-8680 |
| best_oa_location.source.is_core | False |
| best_oa_location.source.is_in_doaj | False |
| best_oa_location.source.display_name | Moore and More |
| best_oa_location.source.host_organization | |
| best_oa_location.source.host_organization_name | |
| best_oa_location.source.host_organization_lineage | |
| best_oa_location.license | cc-by |
| best_oa_location.pdf_url | https://link.springer.com/content/pdf/10.1007/s44275-024-00022-z.pdf |
| best_oa_location.version | publishedVersion |
| best_oa_location.raw_type | journal-article |
| best_oa_location.license_id | https://openalex.org/licenses/cc-by |
| best_oa_location.is_accepted | True |
| best_oa_location.is_published | True |
| best_oa_location.raw_source_name | Moore and More |
| best_oa_location.landing_page_url | https://doi.org/10.1007/s44275-024-00022-z |
| primary_location.id | doi:10.1007/s44275-024-00022-z |
| primary_location.is_oa | True |
| primary_location.source.id | https://openalex.org/S5407042856 |
| primary_location.source.issn | 3004-8680 |
| primary_location.source.type | journal |
| primary_location.source.is_oa | False |
| primary_location.source.issn_l | 3004-8680 |
| primary_location.source.is_core | False |
| primary_location.source.is_in_doaj | False |
| primary_location.source.display_name | Moore and More |
| primary_location.source.host_organization | |
| primary_location.source.host_organization_name | |
| primary_location.source.host_organization_lineage | |
| primary_location.license | cc-by |
| primary_location.pdf_url | https://link.springer.com/content/pdf/10.1007/s44275-024-00022-z.pdf |
| primary_location.version | publishedVersion |
| primary_location.raw_type | journal-article |
| primary_location.license_id | https://openalex.org/licenses/cc-by |
| primary_location.is_accepted | True |
| primary_location.is_published | True |
| primary_location.raw_source_name | Moore and More |
| primary_location.landing_page_url | https://doi.org/10.1007/s44275-024-00022-z |
| publication_date | 2025-03-26 |
| publication_year | 2025 |
| referenced_works | https://openalex.org/W3047768214, https://openalex.org/W2946871514, https://openalex.org/W3013118342, https://openalex.org/W2049010359, https://openalex.org/W2006168333, https://openalex.org/W3212391347, https://openalex.org/W2098067238, https://openalex.org/W321215454, https://openalex.org/W2002089783, https://openalex.org/W2037878462, https://openalex.org/W2755959367, https://openalex.org/W2086871118, https://openalex.org/W2930269520, https://openalex.org/W2160833768, https://openalex.org/W2600948081, https://openalex.org/W2531187920, https://openalex.org/W4388096593, https://openalex.org/W2923506617, https://openalex.org/W4401067998, https://openalex.org/W2529927930, https://openalex.org/W2345828608, https://openalex.org/W2737365364, https://openalex.org/W4388693001, https://openalex.org/W4221058976, https://openalex.org/W2044240951, https://openalex.org/W4310612474, https://openalex.org/W4286001759, https://openalex.org/W4388491070, https://openalex.org/W4281716321, https://openalex.org/W1985900199, https://openalex.org/W2042641547, https://openalex.org/W2135923206, https://openalex.org/W2042437666, https://openalex.org/W4321429287, https://openalex.org/W1972902110, https://openalex.org/W2075714191, https://openalex.org/W1983156928, https://openalex.org/W2936763630, https://openalex.org/W2075952382, https://openalex.org/W2103125572, https://openalex.org/W2116996343, https://openalex.org/W2972167269, https://openalex.org/W2916396434, https://openalex.org/W3204438167, https://openalex.org/W2750128094, https://openalex.org/W2300519965, https://openalex.org/W2129795587, https://openalex.org/W1991654529, https://openalex.org/W4220899490, https://openalex.org/W4224279550, https://openalex.org/W2982967682, https://openalex.org/W1490027313, https://openalex.org/W2811201021, https://openalex.org/W2219786690, https://openalex.org/W3166160376, https://openalex.org/W2154869531, https://openalex.org/W1969248282, https://openalex.org/W1503186957, https://openalex.org/W1976431068, https://openalex.org/W2013374381, https://openalex.org/W2967831047, https://openalex.org/W2034006597, https://openalex.org/W2318540057, https://openalex.org/W2910373064, https://openalex.org/W2977367506, https://openalex.org/W2027142971, https://openalex.org/W2095733268, https://openalex.org/W2062424824, https://openalex.org/W1875408109, https://openalex.org/W3207627558, https://openalex.org/W1991493434, https://openalex.org/W2042638892, https://openalex.org/W2029499202, https://openalex.org/W2064206220, https://openalex.org/W2021779105, https://openalex.org/W2346739128, https://openalex.org/W3166804452, https://openalex.org/W2998999563, https://openalex.org/W3047248638, https://openalex.org/W2118684701, https://openalex.org/W2062297794, https://openalex.org/W2802969303, https://openalex.org/W1893371791, https://openalex.org/W2077048186, https://openalex.org/W2079510098, https://openalex.org/W2069948024, https://openalex.org/W2777739910, https://openalex.org/W2530631855, https://openalex.org/W2789779286, https://openalex.org/W3003879073, https://openalex.org/W3184193917, https://openalex.org/W4395483571, https://openalex.org/W3198797932, https://openalex.org/W2896214587, https://openalex.org/W4321453760, https://openalex.org/W3009180205, https://openalex.org/W1988339217, https://openalex.org/W2013187935, https://openalex.org/W2465095457, https://openalex.org/W2126855682, https://openalex.org/W2009311854, https://openalex.org/W2014914819, https://openalex.org/W2045764812, https://openalex.org/W2248785479, https://openalex.org/W2317587759, https://openalex.org/W2343412159, https://openalex.org/W2586566579, https://openalex.org/W4375946105, https://openalex.org/W2947078454, https://openalex.org/W3100612569, https://openalex.org/W4280650405, https://openalex.org/W2549158474, https://openalex.org/W2917206786, https://openalex.org/W2890956755, https://openalex.org/W2162962542, https://openalex.org/W1567086442, https://openalex.org/W2038573583, https://openalex.org/W2963587018, https://openalex.org/W3169802263, https://openalex.org/W2066977958, https://openalex.org/W2021355404, https://openalex.org/W3176825020, https://openalex.org/W2497989871, https://openalex.org/W1965480795, https://openalex.org/W2072996634, https://openalex.org/W2333811624, https://openalex.org/W4226205310, https://openalex.org/W3118292333, https://openalex.org/W4206524855, https://openalex.org/W3101921497 |
| referenced_works_count | 130 |
| abstract_inverted_index.2 | 92, 160 |
| abstract_inverted_index.3 | 158 |
| abstract_inverted_index.a | 67, 88, 110 |
| abstract_inverted_index.m | 159 |
| abstract_inverted_index.In | 105, 170 |
| abstract_inverted_index.To | 59 |
| abstract_inverted_index.We | 196 |
| abstract_inverted_index.as | 66, 155, 157, 175 |
| abstract_inverted_index.at | 101, 139 |
| abstract_inverted_index.be | 154 |
| abstract_inverted_index.in | 15, 24, 205, 217, 251 |
| abstract_inverted_index.is | 163 |
| abstract_inverted_index.it | 96 |
| abstract_inverted_index.of | 91, 113, 134, 150, 201, 225, 247 |
| abstract_inverted_index.on | 131, 234 |
| abstract_inverted_index.to | 11, 45, 51, 77, 143, 166, 190 |
| abstract_inverted_index.we | 108, 129, 220 |
| abstract_inverted_index.200 | 93 |
| abstract_inverted_index.GaN | 73, 120, 214, 249 |
| abstract_inverted_index.TBR | 149 |
| abstract_inverted_index.and | 17, 37, 82, 95, 121, 124, 183, 211, 240 |
| abstract_inverted_index.can | 153 |
| abstract_inverted_index.due | 10, 76 |
| abstract_inverted_index.for | 72, 119, 237, 244 |
| abstract_inverted_index.has | 64, 87 |
| abstract_inverted_index.its | 78, 231 |
| abstract_inverted_index.low | 156 |
| abstract_inverted_index.new | 242 |
| abstract_inverted_index.the | 21, 102, 114, 132, 140, 144, 148, 199, 213, 222, 245, 252 |
| abstract_inverted_index.two | 115 |
| abstract_inverted_index.TBR, | 207 |
| abstract_inverted_index.also | 197 |
| abstract_inverted_index.been | 188 |
| abstract_inverted_index.chip | 103 |
| abstract_inverted_index.have | 6, 43, 187 |
| abstract_inverted_index.heat | 99 |
| abstract_inverted_index.into | 227 |
| abstract_inverted_index.main | 116 |
| abstract_inverted_index.such | 174 |
| abstract_inverted_index.this | 61, 106, 218 |
| abstract_inverted_index.with | 56 |
| abstract_inverted_index.(NCD) | 180 |
| abstract_inverted_index.(TBR) | 138 |
| abstract_inverted_index.K/GW, | 161 |
| abstract_inverted_index.Thus, | 216 |
| abstract_inverted_index.W/m/K | 94 |
| abstract_inverted_index.heat, | 48 |
| abstract_inverted_index.novel | 172 |
| abstract_inverted_index.often | 27 |
| abstract_inverted_index.power | 4, 238 |
| abstract_inverted_index.roles | 200 |
| abstract_inverted_index.state | 224 |
| abstract_inverted_index.their | 12, 35 |
| abstract_inverted_index.these | 25 |
| abstract_inverted_index.which | 33, 162 |
| abstract_inverted_index.films, | 182 |
| abstract_inverted_index.growth | 126 |
| abstract_inverted_index.highly | 68 |
| abstract_inverted_index.impact | 133, 233 |
| abstract_inverted_index.layer. | 215 |
| abstract_inverted_index.layers | 186, 204 |
| abstract_inverted_index.level. | 104 |
| abstract_inverted_index.model, | 147 |
| abstract_inverted_index.severe | 29 |
| abstract_inverted_index.(SHEs), | 32 |
| abstract_inverted_index.Gallium | 1 |
| abstract_inverted_index.address | 60 |
| abstract_inverted_index.bonding | 123 |
| abstract_inverted_index.capping | 181 |
| abstract_inverted_index.carbide | 168 |
| abstract_inverted_index.current | 223 |
| abstract_inverted_index.degrade | 34 |
| abstract_inverted_index.density | 23 |
| abstract_inverted_index.devices | 5, 26, 239, 250 |
| abstract_inverted_index.diamond | 63, 179, 184, 209 |
| abstract_inverted_index.diffuse | 145 |
| abstract_inverted_index.effects | 31 |
| abstract_inverted_index.emerged | 65 |
| abstract_inverted_index.enhance | 192 |
| abstract_inverted_index.further | 191 |
| abstract_inverted_index.future. | 253 |
| abstract_inverted_index.growth, | 177 |
| abstract_inverted_index.induces | 28 |
| abstract_inverted_index.leading | 50 |
| abstract_inverted_index.methods | 118 |
| abstract_inverted_index.nitride | 2 |
| abstract_inverted_index.provide | 109 |
| abstract_inverted_index.review, | 107, 219 |
| abstract_inverted_index.silicon | 167 |
| abstract_inverted_index.thereby | 49 |
| abstract_inverted_index.thermal | 40, 80, 89, 135, 193, 235 |
| abstract_inverted_index.Abstract | 0 |
| abstract_inverted_index.However, | 20 |
| abstract_inverted_index.boundary | 136 |
| abstract_inverted_index.compared | 55 |
| abstract_inverted_index.consider | 198 |
| abstract_inverted_index.devices, | 74 |
| abstract_inverted_index.diamond: | 122 |
| abstract_inverted_index.enhances | 98 |
| abstract_inverted_index.explored | 189 |
| abstract_inverted_index.markedly | 164 |
| abstract_inverted_index.material | 71 |
| abstract_inverted_index.mismatch | 146 |
| abstract_inverted_index.overview | 112 |
| abstract_inverted_index.pathways | 243 |
| abstract_inverted_index.reducing | 206 |
| abstract_inverted_index.research | 226 |
| abstract_inverted_index.superior | 13, 165 |
| abstract_inverted_index.According | 142 |
| abstract_inverted_index.Moreover, | 128 |
| abstract_inverted_index.addition, | 171 |
| abstract_inverted_index.attention | 9 |
| abstract_inverted_index.attracted | 7 |
| abstract_inverted_index.dissipate | 47 |
| abstract_inverted_index.elaborate | 130 |
| abstract_inverted_index.epitaxial | 125 |
| abstract_inverted_index.patterned | 176 |
| abstract_inverted_index.primarily | 75 |
| abstract_inverted_index.promising | 69 |
| abstract_inverted_index.promoting | 208 |
| abstract_inverted_index.providing | 241 |
| abstract_inverted_index.solutions | 42 |
| abstract_inverted_index.struggled | 44 |
| abstract_inverted_index.substrate | 70 |
| abstract_inverted_index.summarize | 221 |
| abstract_inverted_index.challenge, | 62 |
| abstract_inverted_index.dielectric | 203 |
| abstract_inverted_index.high-power | 18, 22, 248 |
| abstract_inverted_index.interface. | 141 |
| abstract_inverted_index.interfaces | 152 |
| abstract_inverted_index.management | 41, 194, 236 |
| abstract_inverted_index.mechanical | 83 |
| abstract_inverted_index.protecting | 212 |
| abstract_inverted_index.real-world | 53 |
| abstract_inverted_index.resistance | 137 |
| abstract_inverted_index.stability. | 84 |
| abstract_inverted_index.suboptimal | 52 |
| abstract_inverted_index.systematic | 111 |
| abstract_inverted_index.techniques | 173 |
| abstract_inverted_index.technology | 86 |
| abstract_inverted_index.(GaN)-based | 3 |
| abstract_inverted_index.Traditional | 39 |
| abstract_inverted_index.development | 246 |
| abstract_inverted_index.dissipation | 100 |
| abstract_inverted_index.efficiently | 46 |
| abstract_inverted_index.exceptional | 79 |
| abstract_inverted_index.integration | 117 |
| abstract_inverted_index.nucleation, | 210 |
| abstract_inverted_index.passivation | 185 |
| abstract_inverted_index.performance | 14, 36, 54 |
| abstract_inverted_index.significant | 8 |
| abstract_inverted_index.substrates. | 169 |
| abstract_inverted_index.techniques. | 127 |
| abstract_inverted_index.technology, | 229 |
| abstract_inverted_index.theoretical | 57 |
| abstract_inverted_index.conductivity | 81, 90 |
| abstract_inverted_index.highlighting | 230 |
| abstract_inverted_index.intermediate | 202 |
| abstract_inverted_index.predictions. | 58 |
| abstract_inverted_index.reliability. | 38 |
| abstract_inverted_index.self-heating | 30 |
| abstract_inverted_index.applications. | 19 |
| abstract_inverted_index.capabilities. | 195 |
| abstract_inverted_index.revolutionary | 232 |
| abstract_inverted_index.significantly | 97 |
| abstract_inverted_index.GaN-on-diamond | 85, 151, 228 |
| abstract_inverted_index.high-frequency | 16 |
| abstract_inverted_index.nanocrystalline | 178 |
| cited_by_percentile_year.max | 98 |
| cited_by_percentile_year.min | 97 |
| countries_distinct_count | 0 |
| institutions_distinct_count | 11 |
| citation_normalized_percentile.value | 0.93129718 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | True |