Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study Article Swipe
Marco Angelo Giambra
,
Antonio Benfante
,
Riccardo Pernice
,
Vaidotas Mišeikis
,
Filippo Fabbri
,
Christian Reitz
,
Wolfram H. P. Pernice
,
Ralph Krupke
,
E.F. Calandra
,
Salvatore Stivala
,
Alessandro Busacca
,
R. Danneau
·
YOU?
·
· 2019
· Open Access
·
· DOI: https://doi.org/10.1021/acsomega.8b02836
YOU?
·
· 2019
· Open Access
·
· DOI: https://doi.org/10.1021/acsomega.8b02836
In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al$_{2}$O$_{3}$), titanium oxide (TiO$_{2}$), and hafnium oxide (HfO$_{2}$) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging to a specific group (i.e., with the same oxide) have a well-defined performance curve and that the choice of hafnium oxide represents the best trade-off in terms of dielectric properties. Graphene transistors employing HfO$_{2}$ as the dielectric layer, in fact, exhibit the best performance in terms of both the cutoff frequency and the maximum frequency of oscillation.
Related Topics
Concepts
Materials science
Equivalent oxide thickness
Graphene
Optoelectronics
Oxide
Dielectric
Microwave
Transistor
Cutoff frequency
High-κ dielectric
Gate dielectric
Gate oxide
Nanotechnology
Electrical engineering
Voltage
Computer science
Engineering
Telecommunications
Metallurgy
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1021/acsomega.8b02836
- OA Status
- gold
- Cited By
- 22
- References
- 32
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2911951072
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W2911951072Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1021/acsomega.8b02836Digital Object Identifier
- Title
-
Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative StudyWork title
- Type
-
articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2019Year of publication
- Publication date
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2019-01-29Full publication date if available
- Authors
-
Marco Angelo Giambra, Antonio Benfante, Riccardo Pernice, Vaidotas Mišeikis, Filippo Fabbri, Christian Reitz, Wolfram H. P. Pernice, Ralph Krupke, E.F. Calandra, Salvatore Stivala, Alessandro Busacca, R. DanneauList of authors in order
- Landing page
-
https://doi.org/10.1021/acsomega.8b02836Publisher landing page
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
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https://doi.org/10.1021/acsomega.8b02836Direct OA link when available
- Concepts
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Materials science, Equivalent oxide thickness, Graphene, Optoelectronics, Oxide, Dielectric, Microwave, Transistor, Cutoff frequency, High-κ dielectric, Gate dielectric, Gate oxide, Nanotechnology, Electrical engineering, Voltage, Computer science, Engineering, Telecommunications, MetallurgyTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
22Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 3, 2024: 2, 2023: 4, 2022: 3, 2021: 4Per-year citation counts (last 5 years)
- References (count)
-
32Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.GFETs | 39, 76 |
| abstract_inverted_index.among | 8 |
| abstract_inverted_index.curve | 119 |
| abstract_inverted_index.fact, | 145 |
| abstract_inverted_index.group | 109 |
| abstract_inverted_index.oxide | 27, 30, 34, 126 |
| abstract_inverted_index.short | 78 |
| abstract_inverted_index.terms | 132, 151 |
| abstract_inverted_index.their | 21, 94 |
| abstract_inverted_index.work, | 2 |
| abstract_inverted_index.(i.e., | 110 |
| abstract_inverted_index.Direct | 65 |
| abstract_inverted_index.choice | 123 |
| abstract_inverted_index.chosen | 88 |
| abstract_inverted_index.cutoff | 155 |
| abstract_inverted_index.layer, | 143 |
| abstract_inverted_index.layers | 18 |
| abstract_inverted_index.oxide) | 114 |
| abstract_inverted_index.oxide. | 64 |
| abstract_inverted_index.report | 4 |
| abstract_inverted_index.single | 45 |
| abstract_inverted_index.(GFETs) | 12 |
| abstract_inverted_index.carried | 72 |
| abstract_inverted_index.circuit | 79 |
| abstract_inverted_index.current | 66, 80 |
| abstract_inverted_index.devices | 59, 104 |
| abstract_inverted_index.exhibit | 146 |
| abstract_inverted_index.factors | 91 |
| abstract_inverted_index.hafnium | 33, 125 |
| abstract_inverted_index.maximum | 83, 159 |
| abstract_inverted_index.quality | 90 |
| abstract_inverted_index.results | 98 |
| abstract_inverted_index.tested. | 38 |
| abstract_inverted_index.Graphene | 136 |
| abstract_inverted_index.aluminum | 26 |
| abstract_inverted_index.analysis | 50 |
| abstract_inverted_index.evaluate | 20, 93 |
| abstract_inverted_index.graphene | 9 |
| abstract_inverted_index.specific | 108 |
| abstract_inverted_index.titanium | 29 |
| abstract_inverted_index.HfO$_{2}$ | 139 |
| abstract_inverted_index.available | 84 |
| abstract_inverted_index.belonging | 105 |
| abstract_inverted_index.different | 14 |
| abstract_inverted_index.employing | 13, 138 |
| abstract_inverted_index.frequency | 156, 160 |
| abstract_inverted_index.microwave | 22, 68, 95 |
| abstract_inverted_index.performed | 53 |
| abstract_inverted_index.response. | 23 |
| abstract_inverted_index.trade-off | 130 |
| abstract_inverted_index.comparison | 7 |
| abstract_inverted_index.dielectric | 134, 142 |
| abstract_inverted_index.fabricated | 42 |
| abstract_inverted_index.represents | 127 |
| abstract_inverted_index.(HfO$_{2}$) | 35 |
| abstract_inverted_index.dielectrics | 15 |
| abstract_inverted_index.particular, | 25 |
| abstract_inverted_index.performance | 118, 149 |
| abstract_inverted_index.properties. | 135 |
| abstract_inverted_index.statistical | 49 |
| abstract_inverted_index.transistors | 11, 137 |
| abstract_inverted_index.(TiO$_{2}$), | 31 |
| abstract_inverted_index.field-effect | 10 |
| abstract_inverted_index.measurements | 69 |
| abstract_inverted_index.oscillation. | 162 |
| abstract_inverted_index.performance. | 96 |
| abstract_inverted_index.well-defined | 117 |
| abstract_inverted_index.(Al$_{2}$O$_{3}$), | 28 |
| cited_by_percentile_year.max | 98 |
| cited_by_percentile_year.min | 94 |
| corresponding_author_ids | https://openalex.org/A5015697514 |
| countries_distinct_count | 2 |
| institutions_distinct_count | 12 |
| corresponding_institution_ids | https://openalex.org/I4210099310, https://openalex.org/I900890020 |
| citation_normalized_percentile.value | 0.76014668 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |