Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors Article Swipe

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Anwar Jarndal ·

YOU? · · 2021 · Open Access · · DOI: https://doi.org/10.1109/jeds.2021.3119052

In this paper an improved Gray-Wolf-Optimization (GWO) based small-signal modeling is developed. The proposed method is demonstrated by modeling GaN High Electron Mobility Transistors (HEMTs) on SiC and Diamond substrates. The technique bases on engineering the optimization objective function to provide reliable values for the model parameters; while keeping a better fitting for the targeted measurements. The reliability of extraction has been further improved by using physical relevant condition to remove any unrealistic values during the optimization process. The modeling procedure was applied on 2x50-, 8x150-, 8x250- and 16x250- GaN HEMTs on SiC substrate in addition to 2x125- and 4x125- GaN HEMTs on Diamond substrate. Very good results were obtained for both technologies with an excellent fitting for the related measurements. The results also show the reliability of the developed technique and validate its applicability for small- and large-signal modeling applications.

Related Topics

Transistor

Materials Science

Diamond

Electronic Engineering

Optoelectronics

Gallium Nitride

Computer Science

Electrical Engineering

Concepts

Transistor Materials science Diamond Electronic engineering High-electron-mobility transistor Optoelectronics Reliability (semiconductor) Substrate (aquarium) Gallium nitride Computer science Electrical engineering Engineering Nanotechnology Physics Layer (electronics) Power (physics) Geology Oceanography Quantum mechanics Voltage Composite material

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Type: article
Language: en
Landing Page: https://doi.org/10.1109/jeds.2021.3119052
PDF: https://ieeexplore.ieee.org/ielx7/6245494/6423298/09566206.pdf
OA Status: gold
Cited By: 8
References: 44
Related Works: 10
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DOI: https://doi.org/10.1109/jeds.2021.3119052

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Title: Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors

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Language: en

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Publication year: 2021

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Publication date: 2021-01-01

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Authors: Anwar Jarndal

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Landing page: https://doi.org/10.1109/jeds.2021.3119052

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Concepts: Transistor, Materials science, Diamond, Electronic engineering, High-electron-mobility transistor, Optoelectronics, Reliability (semiconductor), Substrate (aquarium), Gallium nitride, Computer science, Electrical engineering, Engineering, Nanotechnology, Physics, Layer (electronics), Power (physics), Geology, Oceanography, Quantum mechanics, Voltage, Composite material

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Cited by: 8

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Citations by year (recent): 2025: 1, 2024: 2, 2023: 3, 2022: 1, 2021: 1

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Related works (count): 10

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