Growth Mode Transition in Two-Dimensional GaSe on Three-Dimensional GaN/Sapphire Platform: Implication for Self-Powered Photodetection Article Swipe
Nhu Quynh Diep
,
Trang Tran
,
Thi Bich Tuyen Huynh
,
Hua Wen
,
W. C. Chou
,
Sa Hoang Huynh
,
Van Qui Le
,
Ying‐Hao Chu
,
Thanh-Tra Vu
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1021/acsanm.3c05343
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1021/acsanm.3c05343
This work reports molecular beam epitaxy (MBE) of two-dimensional (2D) GaSe on a three-dimensional (3D) GaN/sapphire platform, which is widely recognized as a potential candidate for electronics and optoelectronic applications. Herein, we have demonstrated that regulating the adatoms’ mobility via growth temperature can enable a growth mode transition from screw dislocation-driven (SDD) to layer-by-layer (LBL) in the epitaxy of 2D-GaSe. Typically, the high-density and uniform spiral structure is observed in the SDD-GaSe at low temperatures (≤500 °C), while μm-scale triangular LBL-GaSe morphology was dominant at high-temperature regime. The diverse optical properties of 2D-GaSe layers under different growth modes were comprehensively investigated, where the unique behaviors of the in-plane propagation (E1g) Raman mode in the SDD-GaSe as well as the resonant effect in the LBL-GaSe have been reported for the first time. Moreover, a significant blueshift of ∼0.21 eV in PL spectra of the LBL-GaSe layer with respect to the SDD-GaSe layer is indicated. This opens up the probability for band structure engineering of the 2D-GaSe epitaxial layers by switching the growth mode. Attractively, the LBL-GaSe multilayers exhibited a current density ∼120 nA/cm2 at zero bias; thus, it could be an auspicious candidate for self-powered photodetecting applications.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1021/acsanm.3c05343
- https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c05343
- OA Status
- hybrid
- Cited By
- 10
- References
- 39
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4391044379
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- OpenAlex ID
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https://openalex.org/W4391044379Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1021/acsanm.3c05343Digital Object Identifier
- Title
-
Growth Mode Transition in Two-Dimensional GaSe on Three-Dimensional GaN/Sapphire Platform: Implication for Self-Powered PhotodetectionWork title
- Type
-
articleOpenAlex work type
- Language
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enPrimary language
- Publication year
-
2024Year of publication
- Publication date
-
2024-01-20Full publication date if available
- Authors
-
Nhu Quynh Diep, Trang Tran, Thi Bich Tuyen Huynh, Hua Wen, W. C. Chou, Sa Hoang Huynh, Van Qui Le, Ying‐Hao Chu, Thanh-Tra VuList of authors in order
- Landing page
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https://doi.org/10.1021/acsanm.3c05343Publisher landing page
- PDF URL
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https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c05343Direct link to full text PDF
- Open access
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YesWhether a free full text is available
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hybridOpen access status per OpenAlex
- OA URL
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https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c05343Direct OA link when available
- Concepts
-
Photodetection, Materials science, Sapphire, Molecular beam epitaxy, Optoelectronics, Blueshift, Dislocation, Raman spectroscopy, Epitaxy, Layer (electronics), Nanotechnology, Optics, Laser, Photoluminescence, Photodetector, Physics, Composite materialTop concepts (fields/topics) attached by OpenAlex
- Cited by
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10Total citation count in OpenAlex
- Citations by year (recent)
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2025: 9, 2024: 1Per-year citation counts (last 5 years)
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39Number of works referenced by this work
- Related works (count)
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10Other works algorithmically related by OpenAlex
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