High-performance green micro-LED array with isolated n-GaN layers for 6.58 Gbps high-speed visible light communication Article Swipe
YOU?
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· 2025
· Open Access
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· DOI: https://doi.org/10.1063/5.0272905
GaN-based micro-light-emitting diodes (micro-LEDs) have great advantages in visible light communication (VLC). However, the limited external quantum efficiency (EQE) and the modulation bandwidth of green micro-LEDs have been the obstacles of improvement in the data rates of the VLC system. In this work, a straightforward and efficacious approach is employed to improve the VLC performance of the micro-LEDs, that is, etching epitaxial layers to a sapphire substrate using deep-etching processes to fabricate each micro-LED electrically isolated arrays. Compared to micro-LEDs with a common n-type GaN layer, the deep-etched micro-LEDs exhibit enhanced light output power from the sapphire side and increased −3 dB bandwidth, owing to the reduced n-GaN waveguiding effect and parasitic capacitance, resulting in 47.03% and 57.33% improvements in EQE and −3 dB bandwidth at 4 kA/cm2, respectively. As a result, the deep-etched green micro-LED based VLC system achieved a maximum data rate of 6.58 Gbps by employing an orthogonal frequency division multiplexing modulation scheme and a pre-equalization method, which represents the highest data rate for a single green micro-LED.
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- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1063/5.0272905
- https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0272905/20751021/145706_1_5.0272905.pdf
- OA Status
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- References
- 38
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https://openalex.org/W4415103730Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1063/5.0272905Digital Object Identifier
- Title
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High-performance green micro-LED array with isolated n-GaN layers for 6.58 Gbps high-speed visible light communicationWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2025Year of publication
- Publication date
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2025-10-13Full publication date if available
- Authors
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Zhen Zhang, Zuxin Jin, Yuandong Ruan, Runze Runze Lin, Tianyang Ren, Erdan Gu, Xugao Cui, Pengfei TianList of authors in order
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https://doi.org/10.1063/5.0272905Publisher landing page
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https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0272905/20751021/145706_1_5.0272905.pdfDirect link to full text PDF
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YesWhether a free full text is available
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hybridOpen access status per OpenAlex
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https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0272905/20751021/145706_1_5.0272905.pdfDirect OA link when available
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| abstract_inverted_index.common | 82 |
| abstract_inverted_index.diodes | 2 |
| abstract_inverted_index.effect | 109 |
| abstract_inverted_index.layer, | 85 |
| abstract_inverted_index.layers | 62 |
| abstract_inverted_index.n-type | 83 |
| abstract_inverted_index.output | 92 |
| abstract_inverted_index.scheme | 155 |
| abstract_inverted_index.single | 168 |
| abstract_inverted_index.system | 138 |
| abstract_inverted_index.arrays. | 76 |
| abstract_inverted_index.etching | 60 |
| abstract_inverted_index.exhibit | 89 |
| abstract_inverted_index.highest | 163 |
| abstract_inverted_index.improve | 51 |
| abstract_inverted_index.kA/cm2, | 127 |
| abstract_inverted_index.limited | 14 |
| abstract_inverted_index.maximum | 141 |
| abstract_inverted_index.method, | 159 |
| abstract_inverted_index.quantum | 16 |
| abstract_inverted_index.reduced | 106 |
| abstract_inverted_index.result, | 131 |
| abstract_inverted_index.system. | 39 |
| abstract_inverted_index.visible | 8 |
| abstract_inverted_index.Compared | 77 |
| abstract_inverted_index.However, | 12 |
| abstract_inverted_index.achieved | 139 |
| abstract_inverted_index.approach | 47 |
| abstract_inverted_index.division | 152 |
| abstract_inverted_index.employed | 49 |
| abstract_inverted_index.enhanced | 90 |
| abstract_inverted_index.external | 15 |
| abstract_inverted_index.isolated | 75 |
| abstract_inverted_index.sapphire | 65, 96 |
| abstract_inverted_index.GaN-based | 0 |
| abstract_inverted_index.bandwidth | 22, 124 |
| abstract_inverted_index.employing | 148 |
| abstract_inverted_index.epitaxial | 61 |
| abstract_inverted_index.fabricate | 71 |
| abstract_inverted_index.frequency | 151 |
| abstract_inverted_index.increased | 99 |
| abstract_inverted_index.micro-LED | 73, 135 |
| abstract_inverted_index.obstacles | 29 |
| abstract_inverted_index.parasitic | 111 |
| abstract_inverted_index.processes | 69 |
| abstract_inverted_index.resulting | 113 |
| abstract_inverted_index.substrate | 66 |
| abstract_inverted_index.advantages | 6 |
| abstract_inverted_index.bandwidth, | 102 |
| abstract_inverted_index.efficiency | 17 |
| abstract_inverted_index.micro-LED. | 170 |
| abstract_inverted_index.micro-LEDs | 25, 79, 88 |
| abstract_inverted_index.modulation | 21, 154 |
| abstract_inverted_index.orthogonal | 150 |
| abstract_inverted_index.represents | 161 |
| abstract_inverted_index.deep-etched | 87, 133 |
| abstract_inverted_index.efficacious | 46 |
| abstract_inverted_index.improvement | 31 |
| abstract_inverted_index.micro-LEDs, | 57 |
| abstract_inverted_index.performance | 54 |
| abstract_inverted_index.waveguiding | 108 |
| abstract_inverted_index.(micro-LEDs) | 3 |
| abstract_inverted_index.capacitance, | 112 |
| abstract_inverted_index.deep-etching | 68 |
| abstract_inverted_index.electrically | 74 |
| abstract_inverted_index.improvements | 118 |
| abstract_inverted_index.multiplexing | 153 |
| abstract_inverted_index.communication | 10 |
| abstract_inverted_index.respectively. | 128 |
| abstract_inverted_index.straightforward | 44 |
| abstract_inverted_index.pre-equalization | 158 |
| abstract_inverted_index.micro-light-emitting | 1 |
| cited_by_percentile_year | |
| countries_distinct_count | 1 |
| institutions_distinct_count | 8 |
| citation_normalized_percentile.value | 0.309042 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |