High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors Article Swipe
Xinlan Hou
,
Runding Luo
,
Qibin Liu
,
Yanqing Chi
,
Jie Zhang
,
Hongping Ma
,
Qingchun Zhang
,
Jiajie Fan
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1016/j.csite.2024.105371
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1016/j.csite.2024.105371
—With the rapid applications of silicon carbide metal–oxide–semiconductor field-effect transistor (SiC MOSFET) power devices, further improving the performance of SiC MOSFET device through enhancing its gate oxide reliability is one of the crucial directions. The density of interface states in a SiC MOSFET is a significant parameter that affects the reliability of the gate oxide layer. In this paper, the SiC MOS capacitors (MOSCAPs) were prepared by the 1250 °C dry oxidation and 1350 °C NO annealing process. Then, we analyzed the mechanisms of the breakdown by two group of ramped experiment. And we still evaluated the reliability of oxide layer via the high-temperature time-dependent dielectric breakdown (TDDB) tests on the prepared MOSCAPs, meanwhile, the temperature effect on the reliability was considered. Furthermore, the E, 1/E, and E models with Weibull plotting were used to calculate the tBD lifetimes and failure analysis was carried on the failed samples finally. The results indicate that: (1) the impact of the generation and accumulation of the traps in the oxide, which is the main mechanisms of device failure; (2) The prediction of lifetime was calculated with three models at different acceleration factors; (3) at high-temperature, although the lower the density of interface states is, the Si epitaxial growth and C cluster will manifest in the oxide surface and lead to the breakdown of SiC MOSCAPs.
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Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1016/j.csite.2024.105371
- OA Status
- gold
- Cited By
- 3
- References
- 20
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- OpenAlex ID
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All OpenAlex metadata
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- OpenAlex ID
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https://openalex.org/W4403896811Canonical identifier for this work in OpenAlex
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https://doi.org/10.1016/j.csite.2024.105371Digital Object Identifier
- Title
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High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitorsWork title
- Type
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articleOpenAlex work type
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enPrimary language
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2024Year of publication
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2024-10-30Full publication date if available
- Authors
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Xinlan Hou, Runding Luo, Qibin Liu, Yanqing Chi, Jie Zhang, Hongping Ma, Qingchun Zhang, Jiajie FanList of authors in order
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https://doi.org/10.1016/j.csite.2024.105371Publisher landing page
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YesWhether a free full text is available
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goldOpen access status per OpenAlex
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https://doi.org/10.1016/j.csite.2024.105371Direct OA link when available
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Capacitor, Materials science, Dielectric, Optoelectronics, Dielectric strength, Composite material, Engineering physics, Electrical engineering, Voltage, Physics, EngineeringTop concepts (fields/topics) attached by OpenAlex
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3Total citation count in OpenAlex
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2025: 2, 2024: 1Per-year citation counts (last 5 years)
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10Other works algorithmically related by OpenAlex
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| abstract_inverted_index.oxide, | 166 |
| abstract_inverted_index.paper, | 58 |
| abstract_inverted_index.ramped | 90 |
| abstract_inverted_index.states | 38, 199 |
| abstract_inverted_index.MOSFET) | 11 |
| abstract_inverted_index.Weibull | 130 |
| abstract_inverted_index.affects | 48 |
| abstract_inverted_index.carbide | 6 |
| abstract_inverted_index.carried | 143 |
| abstract_inverted_index.cluster | 207 |
| abstract_inverted_index.crucial | 32 |
| abstract_inverted_index.density | 35, 196 |
| abstract_inverted_index.failure | 140 |
| abstract_inverted_index.further | 14 |
| abstract_inverted_index.results | 150 |
| abstract_inverted_index.samples | 147 |
| abstract_inverted_index.silicon | 5 |
| abstract_inverted_index.surface | 213 |
| abstract_inverted_index.through | 22 |
| abstract_inverted_index.—With | 0 |
| abstract_inverted_index.MOSCAPs, | 112 |
| abstract_inverted_index.MOSCAPs. | 221 |
| abstract_inverted_index.although | 192 |
| abstract_inverted_index.analysis | 141 |
| abstract_inverted_index.analyzed | 80 |
| abstract_inverted_index.devices, | 13 |
| abstract_inverted_index.factors; | 188 |
| abstract_inverted_index.failure; | 174 |
| abstract_inverted_index.finally. | 148 |
| abstract_inverted_index.indicate | 151 |
| abstract_inverted_index.lifetime | 179 |
| abstract_inverted_index.manifest | 209 |
| abstract_inverted_index.plotting | 131 |
| abstract_inverted_index.prepared | 65, 111 |
| abstract_inverted_index.process. | 77 |
| abstract_inverted_index.(MOSCAPs) | 63 |
| abstract_inverted_index.annealing | 76 |
| abstract_inverted_index.breakdown | 85, 106, 218 |
| abstract_inverted_index.calculate | 135 |
| abstract_inverted_index.different | 186 |
| abstract_inverted_index.enhancing | 23 |
| abstract_inverted_index.epitaxial | 203 |
| abstract_inverted_index.evaluated | 95 |
| abstract_inverted_index.improving | 15 |
| abstract_inverted_index.interface | 37, 198 |
| abstract_inverted_index.lifetimes | 138 |
| abstract_inverted_index.oxidation | 71 |
| abstract_inverted_index.parameter | 46 |
| abstract_inverted_index.calculated | 181 |
| abstract_inverted_index.capacitors | 62 |
| abstract_inverted_index.dielectric | 105 |
| abstract_inverted_index.generation | 158 |
| abstract_inverted_index.meanwhile, | 113 |
| abstract_inverted_index.mechanisms | 82, 171 |
| abstract_inverted_index.prediction | 177 |
| abstract_inverted_index.transistor | 9 |
| abstract_inverted_index.considered. | 121 |
| abstract_inverted_index.directions. | 33 |
| abstract_inverted_index.experiment. | 91 |
| abstract_inverted_index.performance | 17 |
| abstract_inverted_index.reliability | 27, 50, 97, 119 |
| abstract_inverted_index.significant | 45 |
| abstract_inverted_index.temperature | 115 |
| abstract_inverted_index.Furthermore, | 122 |
| abstract_inverted_index.acceleration | 187 |
| abstract_inverted_index.accumulation | 160 |
| abstract_inverted_index.applications | 3 |
| abstract_inverted_index.field-effect | 8 |
| abstract_inverted_index.time-dependent | 104 |
| abstract_inverted_index.high-temperature | 103 |
| abstract_inverted_index.high-temperature, | 191 |
| abstract_inverted_index.metal–oxide–semiconductor | 7 |
| cited_by_percentile_year.max | 97 |
| cited_by_percentile_year.min | 90 |
| countries_distinct_count | 0 |
| institutions_distinct_count | 8 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/7 |
| sustainable_development_goals[0].score | 0.7099999785423279 |
| sustainable_development_goals[0].display_name | Affordable and clean energy |
| citation_normalized_percentile.value | 0.7568177 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |