Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs Article Swipe
Nicolò Zagni
,
G. Verzellesi
,
Alessandro Bertacchini
,
M. Borgarino
,
Ferdinando Iucolano
,
Alessandro Chini
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1109/led.2024.3375912
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1109/led.2024.3375912
Dynamic on-resistance ( R ON ) affects the stability of p-GaN power HEMTs. In Schottky-gate HEMTs, dynamic R ON is associated to either electron trapping at device surface or dynamic effects occurring in the buffer. However, in p-GaN HEMTs the floating p-GaN region can have an additional role on dynamic R ON , due to removal/injection of holes from/into the barrier with relatively long time constants, which can be erroneously interpreted as a reliability issue. In this letter, we present a model to explain the dynamic R ON due to surface-related effects in p-GaN power HEMTs. The model, called 'hole virtual gate', attributes the experimentally observed R ON instability due to negative/positive gate bias stress (NGS/PGS) to the charging/discharging of surface traps in the AlGaN barrier by the removal/injection of holes through the gate metal/p-GaN Schottky junction. We verify the validity of the model by means of calibrated numerical simulations, that correlate the activation energy EA ≈ 0.4 eV of both R ON increase/decrease during NGS/PGS to the thermal ionization energy of traps in the barrier.
Related Topics
Concepts
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1109/led.2024.3375912
- https://ieeexplore.ieee.org/ielx7/55/4357973/10466553.pdf
- OA Status
- bronze
- Cited By
- 4
- References
- 19
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4392638830
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W4392638830Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.1109/led.2024.3375912Digital Object Identifier
- Title
-
Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTsWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2024Year of publication
- Publication date
-
2024-03-11Full publication date if available
- Authors
-
Nicolò Zagni, G. Verzellesi, Alessandro Bertacchini, M. Borgarino, Ferdinando Iucolano, Alessandro ChiniList of authors in order
- Landing page
-
https://doi.org/10.1109/led.2024.3375912Publisher landing page
- PDF URL
-
https://ieeexplore.ieee.org/ielx7/55/4357973/10466553.pdfDirect link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
bronzeOpen access status per OpenAlex
- OA URL
-
https://ieeexplore.ieee.org/ielx7/55/4357973/10466553.pdfDirect OA link when available
- Concepts
-
Optoelectronics, Materials science, Wide-bandgap semiconductor, Gallium nitride, Power (physics), Logic gate, Electrical engineering, Condensed matter physics, Physics, Engineering, Nanotechnology, Layer (electronics), Quantum mechanicsTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
4Total citation count in OpenAlex
- Citations by year (recent)
-
2025: 2, 2024: 2Per-year citation counts (last 5 years)
- References (count)
-
19Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
Full payload
| id | https://openalex.org/W4392638830 |
|---|---|
| doi | https://doi.org/10.1109/led.2024.3375912 |
| ids.doi | https://doi.org/10.1109/led.2024.3375912 |
| ids.openalex | https://openalex.org/W4392638830 |
| fwci | 1.81621471 |
| type | article |
| title | Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs |
| awards[0].id | https://openalex.org/G1332077954 |
| awards[0].funder_id | https://openalex.org/F4320327207 |
| awards[0].display_name | |
| awards[0].funder_award_id | 101007310 |
| awards[0].funder_display_name | Electronic Components and Systems for European Leadership |
| biblio.issue | 5 |
| biblio.volume | 45 |
| biblio.last_page | 804 |
| biblio.first_page | 801 |
| topics[0].id | https://openalex.org/T10099 |
| topics[0].field.id | https://openalex.org/fields/31 |
| topics[0].field.display_name | Physics and Astronomy |
| topics[0].score | 1.0 |
| topics[0].domain.id | https://openalex.org/domains/3 |
| topics[0].domain.display_name | Physical Sciences |
| topics[0].subfield.id | https://openalex.org/subfields/3104 |
| topics[0].subfield.display_name | Condensed Matter Physics |
| topics[0].display_name | GaN-based semiconductor devices and materials |
| topics[1].id | https://openalex.org/T10022 |
| topics[1].field.id | https://openalex.org/fields/31 |
| topics[1].field.display_name | Physics and Astronomy |
| topics[1].score | 0.9990000128746033 |
| topics[1].domain.id | https://openalex.org/domains/3 |
| topics[1].domain.display_name | Physical Sciences |
| topics[1].subfield.id | https://openalex.org/subfields/3107 |
| topics[1].subfield.display_name | Atomic and Molecular Physics, and Optics |
| topics[1].display_name | Semiconductor Quantum Structures and Devices |
| topics[2].id | https://openalex.org/T10361 |
| topics[2].field.id | https://openalex.org/fields/22 |
| topics[2].field.display_name | Engineering |
| topics[2].score | 0.9979000091552734 |
| topics[2].domain.id | https://openalex.org/domains/3 |
| topics[2].domain.display_name | Physical Sciences |
| topics[2].subfield.id | https://openalex.org/subfields/2208 |
| topics[2].subfield.display_name | Electrical and Electronic Engineering |
| topics[2].display_name | Silicon Carbide Semiconductor Technologies |
| funders[0].id | https://openalex.org/F4320327207 |
| funders[0].ror | |
| funders[0].display_name | Electronic Components and Systems for European Leadership |
| is_xpac | False |
| apc_list | |
| apc_paid | |
| concepts[0].id | https://openalex.org/C49040817 |
| concepts[0].level | 1 |
| concepts[0].score | 0.6279692649841309 |
| concepts[0].wikidata | https://www.wikidata.org/wiki/Q193091 |
| concepts[0].display_name | Optoelectronics |
| concepts[1].id | https://openalex.org/C192562407 |
| concepts[1].level | 0 |
| concepts[1].score | 0.5923900604248047 |
| concepts[1].wikidata | https://www.wikidata.org/wiki/Q228736 |
| concepts[1].display_name | Materials science |
| concepts[2].id | https://openalex.org/C189278905 |
| concepts[2].level | 2 |
| concepts[2].score | 0.5464696288108826 |
| concepts[2].wikidata | https://www.wikidata.org/wiki/Q2157708 |
| concepts[2].display_name | Wide-bandgap semiconductor |
| concepts[3].id | https://openalex.org/C2778871202 |
| concepts[3].level | 3 |
| concepts[3].score | 0.5421766042709351 |
| concepts[3].wikidata | https://www.wikidata.org/wiki/Q411713 |
| concepts[3].display_name | Gallium nitride |
| concepts[4].id | https://openalex.org/C163258240 |
| concepts[4].level | 2 |
| concepts[4].score | 0.47129619121551514 |
| concepts[4].wikidata | https://www.wikidata.org/wiki/Q25342 |
| concepts[4].display_name | Power (physics) |
| concepts[5].id | https://openalex.org/C131017901 |
| concepts[5].level | 2 |
| concepts[5].score | 0.44971996545791626 |
| concepts[5].wikidata | https://www.wikidata.org/wiki/Q170451 |
| concepts[5].display_name | Logic gate |
| concepts[6].id | https://openalex.org/C119599485 |
| concepts[6].level | 1 |
| concepts[6].score | 0.35766416788101196 |
| concepts[6].wikidata | https://www.wikidata.org/wiki/Q43035 |
| concepts[6].display_name | Electrical engineering |
| concepts[7].id | https://openalex.org/C26873012 |
| concepts[7].level | 1 |
| concepts[7].score | 0.3255589008331299 |
| concepts[7].wikidata | https://www.wikidata.org/wiki/Q214781 |
| concepts[7].display_name | Condensed matter physics |
| concepts[8].id | https://openalex.org/C121332964 |
| concepts[8].level | 0 |
| concepts[8].score | 0.30588585138320923 |
| concepts[8].wikidata | https://www.wikidata.org/wiki/Q413 |
| concepts[8].display_name | Physics |
| concepts[9].id | https://openalex.org/C127413603 |
| concepts[9].level | 0 |
| concepts[9].score | 0.21150270104408264 |
| concepts[9].wikidata | https://www.wikidata.org/wiki/Q11023 |
| concepts[9].display_name | Engineering |
| concepts[10].id | https://openalex.org/C171250308 |
| concepts[10].level | 1 |
| concepts[10].score | 0.18144413828849792 |
| concepts[10].wikidata | https://www.wikidata.org/wiki/Q11468 |
| concepts[10].display_name | Nanotechnology |
| concepts[11].id | https://openalex.org/C2779227376 |
| concepts[11].level | 2 |
| concepts[11].score | 0.08606123924255371 |
| concepts[11].wikidata | https://www.wikidata.org/wiki/Q6505497 |
| concepts[11].display_name | Layer (electronics) |
| concepts[12].id | https://openalex.org/C62520636 |
| concepts[12].level | 1 |
| concepts[12].score | 0.0 |
| concepts[12].wikidata | https://www.wikidata.org/wiki/Q944 |
| concepts[12].display_name | Quantum mechanics |
| keywords[0].id | https://openalex.org/keywords/optoelectronics |
| keywords[0].score | 0.6279692649841309 |
| keywords[0].display_name | Optoelectronics |
| keywords[1].id | https://openalex.org/keywords/materials-science |
| keywords[1].score | 0.5923900604248047 |
| keywords[1].display_name | Materials science |
| keywords[2].id | https://openalex.org/keywords/wide-bandgap-semiconductor |
| keywords[2].score | 0.5464696288108826 |
| keywords[2].display_name | Wide-bandgap semiconductor |
| keywords[3].id | https://openalex.org/keywords/gallium-nitride |
| keywords[3].score | 0.5421766042709351 |
| keywords[3].display_name | Gallium nitride |
| keywords[4].id | https://openalex.org/keywords/power |
| keywords[4].score | 0.47129619121551514 |
| keywords[4].display_name | Power (physics) |
| keywords[5].id | https://openalex.org/keywords/logic-gate |
| keywords[5].score | 0.44971996545791626 |
| keywords[5].display_name | Logic gate |
| keywords[6].id | https://openalex.org/keywords/electrical-engineering |
| keywords[6].score | 0.35766416788101196 |
| keywords[6].display_name | Electrical engineering |
| keywords[7].id | https://openalex.org/keywords/condensed-matter-physics |
| keywords[7].score | 0.3255589008331299 |
| keywords[7].display_name | Condensed matter physics |
| keywords[8].id | https://openalex.org/keywords/physics |
| keywords[8].score | 0.30588585138320923 |
| keywords[8].display_name | Physics |
| keywords[9].id | https://openalex.org/keywords/engineering |
| keywords[9].score | 0.21150270104408264 |
| keywords[9].display_name | Engineering |
| keywords[10].id | https://openalex.org/keywords/nanotechnology |
| keywords[10].score | 0.18144413828849792 |
| keywords[10].display_name | Nanotechnology |
| keywords[11].id | https://openalex.org/keywords/layer |
| keywords[11].score | 0.08606123924255371 |
| keywords[11].display_name | Layer (electronics) |
| language | en |
| locations[0].id | doi:10.1109/led.2024.3375912 |
| locations[0].is_oa | True |
| locations[0].source.id | https://openalex.org/S19887683 |
| locations[0].source.issn | 0741-3106, 1558-0563 |
| locations[0].source.type | journal |
| locations[0].source.is_oa | False |
| locations[0].source.issn_l | 0741-3106 |
| locations[0].source.is_core | True |
| locations[0].source.is_in_doaj | False |
| locations[0].source.display_name | IEEE Electron Device Letters |
| locations[0].source.host_organization | https://openalex.org/P4310319808 |
| locations[0].source.host_organization_name | Institute of Electrical and Electronics Engineers |
| locations[0].source.host_organization_lineage | https://openalex.org/P4310319808 |
| locations[0].source.host_organization_lineage_names | Institute of Electrical and Electronics Engineers |
| locations[0].license | |
| locations[0].pdf_url | https://ieeexplore.ieee.org/ielx7/55/4357973/10466553.pdf |
| locations[0].version | publishedVersion |
| locations[0].raw_type | journal-article |
| locations[0].license_id | |
| locations[0].is_accepted | True |
| locations[0].is_published | True |
| locations[0].raw_source_name | IEEE Electron Device Letters |
| locations[0].landing_page_url | https://doi.org/10.1109/led.2024.3375912 |
| locations[1].id | pmh:oai:iris.unimore.it:11380/1337211 |
| locations[1].is_oa | True |
| locations[1].source.id | https://openalex.org/S4306400718 |
| locations[1].source.issn | |
| locations[1].source.type | repository |
| locations[1].source.is_oa | False |
| locations[1].source.issn_l | |
| locations[1].source.is_core | False |
| locations[1].source.is_in_doaj | False |
| locations[1].source.display_name | IRIS UNIMORE (University of Modena and Reggio Emilia) |
| locations[1].source.host_organization | https://openalex.org/I122346577 |
| locations[1].source.host_organization_name | University of Modena and Reggio Emilia |
| locations[1].source.host_organization_lineage | https://openalex.org/I122346577 |
| locations[1].license | cc-by |
| locations[1].pdf_url | |
| locations[1].version | submittedVersion |
| locations[1].raw_type | info:eu-repo/semantics/article |
| locations[1].license_id | https://openalex.org/licenses/cc-by |
| locations[1].is_accepted | False |
| locations[1].is_published | False |
| locations[1].raw_source_name | |
| locations[1].landing_page_url | https://hdl.handle.net/11380/1337211 |
| indexed_in | crossref |
| authorships[0].author.id | https://openalex.org/A5007416472 |
| authorships[0].author.orcid | https://orcid.org/0000-0003-2454-1883 |
| authorships[0].author.display_name | Nicolò Zagni |
| authorships[0].countries | IT |
| authorships[0].affiliations[0].institution_ids | https://openalex.org/I122346577, https://openalex.org/I4210161797 |
| authorships[0].affiliations[0].raw_affiliation_string | Department of Engineering “Enzo Ferrari,”, Università di Modena e Reggio Emilia, Modena, Italy |
| authorships[0].institutions[0].id | https://openalex.org/I4210161797 |
| authorships[0].institutions[0].ror | https://ror.org/05p859a12 |
| authorships[0].institutions[0].type | company |
| authorships[0].institutions[0].lineage | https://openalex.org/I4210161797 |
| authorships[0].institutions[0].country_code | IT |
| authorships[0].institutions[0].display_name | Ferrari (Italy) |
| authorships[0].institutions[1].id | https://openalex.org/I122346577 |
| authorships[0].institutions[1].ror | https://ror.org/02d4c4y02 |
| authorships[0].institutions[1].type | education |
| authorships[0].institutions[1].lineage | https://openalex.org/I122346577 |
| authorships[0].institutions[1].country_code | IT |
| authorships[0].institutions[1].display_name | University of Modena and Reggio Emilia |
| authorships[0].author_position | first |
| authorships[0].raw_author_name | Nicolò Zagni |
| authorships[0].is_corresponding | False |
| authorships[0].raw_affiliation_strings | Department of Engineering “Enzo Ferrari,”, Università di Modena e Reggio Emilia, Modena, Italy |
| authorships[1].author.id | https://openalex.org/A5015072881 |
| authorships[1].author.orcid | https://orcid.org/0000-0001-5770-6512 |
| authorships[1].author.display_name | G. Verzellesi |
| authorships[1].countries | IT |
| authorships[1].affiliations[0].institution_ids | https://openalex.org/I122346577 |
| authorships[1].affiliations[0].raw_affiliation_string | Department of Sciences and Methods for Engineering (DISMI), EN&TECH Center, University of Modena and Reggio Emilia, Reggio Emilia, Italy |
| authorships[1].institutions[0].id | https://openalex.org/I122346577 |
| authorships[1].institutions[0].ror | https://ror.org/02d4c4y02 |
| authorships[1].institutions[0].type | education |
| authorships[1].institutions[0].lineage | https://openalex.org/I122346577 |
| authorships[1].institutions[0].country_code | IT |
| authorships[1].institutions[0].display_name | University of Modena and Reggio Emilia |
| authorships[1].author_position | middle |
| authorships[1].raw_author_name | Giovanni Verzellesi |
| authorships[1].is_corresponding | False |
| authorships[1].raw_affiliation_strings | Department of Sciences and Methods for Engineering (DISMI), EN&TECH Center, University of Modena and Reggio Emilia, Reggio Emilia, Italy |
| authorships[2].author.id | https://openalex.org/A5062845733 |
| authorships[2].author.orcid | https://orcid.org/0000-0001-9899-5365 |
| authorships[2].author.display_name | Alessandro Bertacchini |
| authorships[2].countries | IT |
| authorships[2].affiliations[0].institution_ids | https://openalex.org/I122346577 |
| authorships[2].affiliations[0].raw_affiliation_string | Department of Sciences and Methods for Engineering (DISMI), EN&TECH Center, University of Modena and Reggio Emilia, Reggio Emilia, Italy |
| authorships[2].institutions[0].id | https://openalex.org/I122346577 |
| authorships[2].institutions[0].ror | https://ror.org/02d4c4y02 |
| authorships[2].institutions[0].type | education |
| authorships[2].institutions[0].lineage | https://openalex.org/I122346577 |
| authorships[2].institutions[0].country_code | IT |
| authorships[2].institutions[0].display_name | University of Modena and Reggio Emilia |
| authorships[2].author_position | middle |
| authorships[2].raw_author_name | Alessandro Bertacchini |
| authorships[2].is_corresponding | False |
| authorships[2].raw_affiliation_strings | Department of Sciences and Methods for Engineering (DISMI), EN&TECH Center, University of Modena and Reggio Emilia, Reggio Emilia, Italy |
| authorships[3].author.id | https://openalex.org/A5090318572 |
| authorships[3].author.orcid | https://orcid.org/0000-0001-9678-592X |
| authorships[3].author.display_name | M. Borgarino |
| authorships[3].countries | IT |
| authorships[3].affiliations[0].institution_ids | https://openalex.org/I122346577, https://openalex.org/I4210161797 |
| authorships[3].affiliations[0].raw_affiliation_string | Department of Engineering “Enzo Ferrari,”, Università di Modena e Reggio Emilia, Modena, Italy |
| authorships[3].institutions[0].id | https://openalex.org/I4210161797 |
| authorships[3].institutions[0].ror | https://ror.org/05p859a12 |
| authorships[3].institutions[0].type | company |
| authorships[3].institutions[0].lineage | https://openalex.org/I4210161797 |
| authorships[3].institutions[0].country_code | IT |
| authorships[3].institutions[0].display_name | Ferrari (Italy) |
| authorships[3].institutions[1].id | https://openalex.org/I122346577 |
| authorships[3].institutions[1].ror | https://ror.org/02d4c4y02 |
| authorships[3].institutions[1].type | education |
| authorships[3].institutions[1].lineage | https://openalex.org/I122346577 |
| authorships[3].institutions[1].country_code | IT |
| authorships[3].institutions[1].display_name | University of Modena and Reggio Emilia |
| authorships[3].author_position | middle |
| authorships[3].raw_author_name | Mattia Borgarino |
| authorships[3].is_corresponding | False |
| authorships[3].raw_affiliation_strings | Department of Engineering “Enzo Ferrari,”, Università di Modena e Reggio Emilia, Modena, Italy |
| authorships[4].author.id | https://openalex.org/A5110453844 |
| authorships[4].author.orcid | |
| authorships[4].author.display_name | Ferdinando Iucolano |
| authorships[4].countries | IT |
| authorships[4].affiliations[0].institution_ids | https://openalex.org/I4210154781 |
| authorships[4].affiliations[0].raw_affiliation_string | STMicroelectronics, Catania, Italy |
| authorships[4].institutions[0].id | https://openalex.org/I4210154781 |
| authorships[4].institutions[0].ror | https://ror.org/053bqv655 |
| authorships[4].institutions[0].type | company |
| authorships[4].institutions[0].lineage | https://openalex.org/I131827901, https://openalex.org/I4210154781 |
| authorships[4].institutions[0].country_code | IT |
| authorships[4].institutions[0].display_name | STMicroelectronics (Italy) |
| authorships[4].author_position | middle |
| authorships[4].raw_author_name | Ferdinando Iucolano |
| authorships[4].is_corresponding | False |
| authorships[4].raw_affiliation_strings | STMicroelectronics, Catania, Italy |
| authorships[5].author.id | https://openalex.org/A5023358290 |
| authorships[5].author.orcid | https://orcid.org/0000-0002-5865-271X |
| authorships[5].author.display_name | Alessandro Chini |
| authorships[5].countries | IT |
| authorships[5].affiliations[0].institution_ids | https://openalex.org/I122346577, https://openalex.org/I4210161797 |
| authorships[5].affiliations[0].raw_affiliation_string | Department of Engineering “Enzo Ferrari,”, Università di Modena e Reggio Emilia, Modena, Italy |
| authorships[5].institutions[0].id | https://openalex.org/I4210161797 |
| authorships[5].institutions[0].ror | https://ror.org/05p859a12 |
| authorships[5].institutions[0].type | company |
| authorships[5].institutions[0].lineage | https://openalex.org/I4210161797 |
| authorships[5].institutions[0].country_code | IT |
| authorships[5].institutions[0].display_name | Ferrari (Italy) |
| authorships[5].institutions[1].id | https://openalex.org/I122346577 |
| authorships[5].institutions[1].ror | https://ror.org/02d4c4y02 |
| authorships[5].institutions[1].type | education |
| authorships[5].institutions[1].lineage | https://openalex.org/I122346577 |
| authorships[5].institutions[1].country_code | IT |
| authorships[5].institutions[1].display_name | University of Modena and Reggio Emilia |
| authorships[5].author_position | last |
| authorships[5].raw_author_name | Alessandro Chini |
| authorships[5].is_corresponding | False |
| authorships[5].raw_affiliation_strings | Department of Engineering “Enzo Ferrari,”, Università di Modena e Reggio Emilia, Modena, Italy |
| has_content.pdf | True |
| has_content.grobid_xml | True |
| is_paratext | False |
| open_access.is_oa | True |
| open_access.oa_url | https://ieeexplore.ieee.org/ielx7/55/4357973/10466553.pdf |
| open_access.oa_status | bronze |
| open_access.any_repository_has_fulltext | False |
| created_date | 2024-03-12T00:00:00 |
| display_name | Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs |
| has_fulltext | True |
| is_retracted | False |
| updated_date | 2025-11-06T03:46:38.306776 |
| primary_topic.id | https://openalex.org/T10099 |
| primary_topic.field.id | https://openalex.org/fields/31 |
| primary_topic.field.display_name | Physics and Astronomy |
| primary_topic.score | 1.0 |
| primary_topic.domain.id | https://openalex.org/domains/3 |
| primary_topic.domain.display_name | Physical Sciences |
| primary_topic.subfield.id | https://openalex.org/subfields/3104 |
| primary_topic.subfield.display_name | Condensed Matter Physics |
| primary_topic.display_name | GaN-based semiconductor devices and materials |
| related_works | https://openalex.org/W2000487630, https://openalex.org/W2017113730, https://openalex.org/W2109359929, https://openalex.org/W2654716541, https://openalex.org/W2037936622, https://openalex.org/W1988167421, https://openalex.org/W4297582192, https://openalex.org/W2533157014, https://openalex.org/W4289782876, https://openalex.org/W4385624134 |
| cited_by_count | 4 |
| counts_by_year[0].year | 2025 |
| counts_by_year[0].cited_by_count | 2 |
| counts_by_year[1].year | 2024 |
| counts_by_year[1].cited_by_count | 2 |
| locations_count | 2 |
| best_oa_location.id | doi:10.1109/led.2024.3375912 |
| best_oa_location.is_oa | True |
| best_oa_location.source.id | https://openalex.org/S19887683 |
| best_oa_location.source.issn | 0741-3106, 1558-0563 |
| best_oa_location.source.type | journal |
| best_oa_location.source.is_oa | False |
| best_oa_location.source.issn_l | 0741-3106 |
| best_oa_location.source.is_core | True |
| best_oa_location.source.is_in_doaj | False |
| best_oa_location.source.display_name | IEEE Electron Device Letters |
| best_oa_location.source.host_organization | https://openalex.org/P4310319808 |
| best_oa_location.source.host_organization_name | Institute of Electrical and Electronics Engineers |
| best_oa_location.source.host_organization_lineage | https://openalex.org/P4310319808 |
| best_oa_location.source.host_organization_lineage_names | Institute of Electrical and Electronics Engineers |
| best_oa_location.license | |
| best_oa_location.pdf_url | https://ieeexplore.ieee.org/ielx7/55/4357973/10466553.pdf |
| best_oa_location.version | publishedVersion |
| best_oa_location.raw_type | journal-article |
| best_oa_location.license_id | |
| best_oa_location.is_accepted | True |
| best_oa_location.is_published | True |
| best_oa_location.raw_source_name | IEEE Electron Device Letters |
| best_oa_location.landing_page_url | https://doi.org/10.1109/led.2024.3375912 |
| primary_location.id | doi:10.1109/led.2024.3375912 |
| primary_location.is_oa | True |
| primary_location.source.id | https://openalex.org/S19887683 |
| primary_location.source.issn | 0741-3106, 1558-0563 |
| primary_location.source.type | journal |
| primary_location.source.is_oa | False |
| primary_location.source.issn_l | 0741-3106 |
| primary_location.source.is_core | True |
| primary_location.source.is_in_doaj | False |
| primary_location.source.display_name | IEEE Electron Device Letters |
| primary_location.source.host_organization | https://openalex.org/P4310319808 |
| primary_location.source.host_organization_name | Institute of Electrical and Electronics Engineers |
| primary_location.source.host_organization_lineage | https://openalex.org/P4310319808 |
| primary_location.source.host_organization_lineage_names | Institute of Electrical and Electronics Engineers |
| primary_location.license | |
| primary_location.pdf_url | https://ieeexplore.ieee.org/ielx7/55/4357973/10466553.pdf |
| primary_location.version | publishedVersion |
| primary_location.raw_type | journal-article |
| primary_location.license_id | |
| primary_location.is_accepted | True |
| primary_location.is_published | True |
| primary_location.raw_source_name | IEEE Electron Device Letters |
| primary_location.landing_page_url | https://doi.org/10.1109/led.2024.3375912 |
| publication_date | 2024-03-11 |
| publication_year | 2024 |
| referenced_works | https://openalex.org/W3212391347, https://openalex.org/W3199954886, https://openalex.org/W4385819788, https://openalex.org/W3120003662, https://openalex.org/W2945696935, https://openalex.org/W2956189539, https://openalex.org/W2955624864, https://openalex.org/W2801059624, https://openalex.org/W2519239207, https://openalex.org/W4362714719, https://openalex.org/W4309965733, https://openalex.org/W4393217883, https://openalex.org/W3137373271, https://openalex.org/W2137778525, https://openalex.org/W3167063279, https://openalex.org/W3196224244, https://openalex.org/W2957614372, https://openalex.org/W1977450210, https://openalex.org/W2147314836 |
| referenced_works_count | 19 |
| abstract_inverted_index.( | 2 |
| abstract_inverted_index.) | 9 |
| abstract_inverted_index., | 64 |
| abstract_inverted_index.a | 84, 92 |
| abstract_inverted_index.EA | 175 |
| abstract_inverted_index.In | 17, 87 |
| abstract_inverted_index.We | 157 |
| abstract_inverted_index.an | 53 |
| abstract_inverted_index.as | 83 |
| abstract_inverted_index.at | 33 |
| abstract_inverted_index.be | 80 |
| abstract_inverted_index.by | 146, 164 |
| abstract_inverted_index.eV | 178 |
| abstract_inverted_index.in | 40, 44, 108, 142, 197 |
| abstract_inverted_index.is | 27 |
| abstract_inverted_index.of | 13, 68, 139, 149, 161, 166, 179, 195 |
| abstract_inverted_index.on | 56 |
| abstract_inverted_index.or | 36 |
| abstract_inverted_index.to | 29, 66, 94, 105, 130, 136, 190 |
| abstract_inverted_index.we | 90 |
| abstract_inverted_index.0.4 | 177 |
| abstract_inverted_index.The | 112 |
| abstract_inverted_index.can | 51, 79 |
| abstract_inverted_index.due | 65, 104, 129 |
| abstract_inverted_index.the | 11, 41, 47, 71, 96, 119, 137, 143, 147, 152, 159, 162, 172, 191, 198 |
| abstract_inverted_index.≈ | 176 |
| abstract_inverted_index.<sub | 6, 24, 61, 101, 125, 184 |
| abstract_inverted_index.bias | 133 |
| abstract_inverted_index.both | 180 |
| abstract_inverted_index.gate | 132, 153 |
| abstract_inverted_index.have | 52 |
| abstract_inverted_index.long | 75 |
| abstract_inverted_index.role | 55 |
| abstract_inverted_index.that | 170 |
| abstract_inverted_index.this | 88 |
| abstract_inverted_index.time | 76 |
| abstract_inverted_index.with | 73 |
| abstract_inverted_index.'hole | 115 |
| abstract_inverted_index.AlGaN | 144 |
| abstract_inverted_index.HEMTs | 46 |
| abstract_inverted_index.holes | 69, 150 |
| abstract_inverted_index.means | 165 |
| abstract_inverted_index.model | 93, 163 |
| abstract_inverted_index.p-GaN | 14, 45, 49, 109 |
| abstract_inverted_index.power | 15, 110 |
| abstract_inverted_index.traps | 141, 196 |
| abstract_inverted_index.which | 78 |
| abstract_inverted_index.HEMTs, | 19 |
| abstract_inverted_index.HEMTs. | 16, 111 |
| abstract_inverted_index.called | 114 |
| abstract_inverted_index.device | 34 |
| abstract_inverted_index.during | 188 |
| abstract_inverted_index.either | 30 |
| abstract_inverted_index.energy | 174, 194 |
| abstract_inverted_index.gate', | 117 |
| abstract_inverted_index.issue. | 86 |
| abstract_inverted_index.model, | 113 |
| abstract_inverted_index.region | 50 |
| abstract_inverted_index.stress | 134 |
| abstract_inverted_index.verify | 158 |
| abstract_inverted_index.<italic | 3, 21, 58, 98, 122, 181 |
| abstract_inverted_index.Dynamic | 0 |
| abstract_inverted_index.NGS/PGS | 189 |
| abstract_inverted_index.affects | 10 |
| abstract_inverted_index.barrier | 72, 145 |
| abstract_inverted_index.buffer. | 42 |
| abstract_inverted_index.dynamic | 20, 37, 57, 97 |
| abstract_inverted_index.effects | 38, 107 |
| abstract_inverted_index.explain | 95 |
| abstract_inverted_index.letter, | 89 |
| abstract_inverted_index.present | 91 |
| abstract_inverted_index.surface | 35, 140 |
| abstract_inverted_index.thermal | 192 |
| abstract_inverted_index.through | 151 |
| abstract_inverted_index.virtual | 116 |
| abstract_inverted_index.However, | 43 |
| abstract_inverted_index.Schottky | 155 |
| abstract_inverted_index.barrier. | 199 |
| abstract_inverted_index.electron | 31 |
| abstract_inverted_index.floating | 48 |
| abstract_inverted_index.observed | 121 |
| abstract_inverted_index.trapping | 32 |
| abstract_inverted_index.validity | 160 |
| abstract_inverted_index.(NGS/PGS) | 135 |
| abstract_inverted_index.correlate | 171 |
| abstract_inverted_index.from/into | 70 |
| abstract_inverted_index.junction. | 156 |
| abstract_inverted_index.numerical | 168 |
| abstract_inverted_index.occurring | 39 |
| abstract_inverted_index.stability | 12 |
| abstract_inverted_index.activation | 173 |
| abstract_inverted_index.additional | 54 |
| abstract_inverted_index.associated | 28 |
| abstract_inverted_index.attributes | 118 |
| abstract_inverted_index.calibrated | 167 |
| abstract_inverted_index.constants, | 77 |
| abstract_inverted_index.ionization | 193 |
| abstract_inverted_index.relatively | 74 |
| abstract_inverted_index.erroneously | 81 |
| abstract_inverted_index.instability | 128 |
| abstract_inverted_index.interpreted | 82 |
| abstract_inverted_index.metal/p-GaN | 154 |
| abstract_inverted_index.reliability | 85 |
| abstract_inverted_index.simulations, | 169 |
| abstract_inverted_index.Schottky-gate | 18 |
| abstract_inverted_index.on-resistance | 1 |
| abstract_inverted_index.experimentally | 120 |
| abstract_inverted_index.surface-related | 106 |
| abstract_inverted_index.increase/decrease | 187 |
| abstract_inverted_index.negative/positive | 131 |
| abstract_inverted_index.removal/injection | 67, 148 |
| abstract_inverted_index.charging/discharging | 138 |
| abstract_inverted_index.xmlns:mml="http://www.w3.org/1998/Math/MathML" | 4, 7, 22, 25, 59, 62, 99, 102, 123, 126, 182, 185 |
| abstract_inverted_index.xmlns:xlink="http://www.w3.org/1999/xlink">R</i> | 5, 23, 60, 100, 124, 183 |
| abstract_inverted_index.xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> | 8, 26, 63, 103, 127, 186 |
| cited_by_percentile_year.max | 97 |
| cited_by_percentile_year.min | 94 |
| countries_distinct_count | 1 |
| institutions_distinct_count | 6 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/7 |
| sustainable_development_goals[0].score | 0.4399999976158142 |
| sustainable_development_goals[0].display_name | Affordable and clean energy |
| citation_normalized_percentile.value | 0.83172126 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |