Study of Heat Dissipation Mechanism in Nanoscale MOSFETs Using BDE Model Article Swipe

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MOSFET Materials science Specularity Boltzmann equation Nanoscopic scale Thermal conduction Thermal conductivity Scattering Condensed matter physics Transistor Semiconductor Field-effect transistor Optoelectronics Nanotechnology Physics Thermodynamics Optics Composite material Quantum mechanics Voltage Specular reflection

Houssem Rezgui , Faouzi Nasri , Mohamed Fadhel Ben Aissa , Amen Allah Guizani ·

YOU? · · 2018 · Open Access · · DOI: https://doi.org/10.5772/intechopen.75595 · OA: W2808772970

In this chapter, we report the nano-heat transport in metal-oxide-semiconductor field effect transistor (MOSFET). We propose a ballistic-diffusive model (BDE) to inquire the thermal stability of nanoscale MOSFET’s. To study the mechanism of scattering in the interface oxide-semiconductor, we have included the specularity parameter defined as the probability of reflection at boundary. In addition, we have studied the effective thermal conductivity (ETC) in nanofilms we found that ETC depend with the size of nanomaterial. The finite element method (FEM) is used to resolve the results for a 10 nm channel length. The results prove that our proposed model is close to those results obtained by the Boltzmann transport equation (BTE).