Impact of Device Scaling on the Electrical Properties of MoS2 Field-effect Transistors Article Swipe
Goutham Arutchelvan
,
Quentin Smets
,
Devin Verreck
,
Zubair Ahmed
,
Abhinav Gaur
,
Surajit Sutar
,
Julien Jussot
,
Benjamin Groven
,
Marc Heyns
,
Dennis Lin
,
Inge Asselberghs
,
Iuliana Radu
·
YOU?
·
· 2021
· Open Access
·
· DOI: https://doi.org/10.21203/rs.3.rs-141737/v1
YOU?
·
· 2021
· Open Access
·
· DOI: https://doi.org/10.21203/rs.3.rs-141737/v1
Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 μS/μm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with Silicon gate-all-around devices.
Related Topics
Concepts
Scaling
Transconductance
Materials science
Contact resistance
Optoelectronics
Transistor
Schottky barrier
Field-effect transistor
Monolayer
Drain-induced barrier lowering
Enhanced Data Rates for GSM Evolution
Nanotechnology
Electrical engineering
Computer science
Voltage
Engineering
Geometry
Telecommunications
Mathematics
Diode
Layer (electronics)
Metadata
- Type
- preprint
- Language
- en
- Landing Page
- https://doi.org/10.21203/rs.3.rs-141737/v1
- OA Status
- green
- Cited By
- 1
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W4210561501
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4210561501Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.21203/rs.3.rs-141737/v1Digital Object Identifier
- Title
-
Impact of Device Scaling on the Electrical Properties of MoS2 Field-effect TransistorsWork title
- Type
-
preprintOpenAlex work type
- Language
-
enPrimary language
- Publication year
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2021Year of publication
- Publication date
-
2021-01-12Full publication date if available
- Authors
-
Goutham Arutchelvan, Quentin Smets, Devin Verreck, Zubair Ahmed, Abhinav Gaur, Surajit Sutar, Julien Jussot, Benjamin Groven, Marc Heyns, Dennis Lin, Inge Asselberghs, Iuliana RaduList of authors in order
- Landing page
-
https://doi.org/10.21203/rs.3.rs-141737/v1Publisher landing page
- Open access
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YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
- OA URL
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https://doi.org/10.21203/rs.3.rs-141737/v1Direct OA link when available
- Concepts
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Scaling, Transconductance, Materials science, Contact resistance, Optoelectronics, Transistor, Schottky barrier, Field-effect transistor, Monolayer, Drain-induced barrier lowering, Enhanced Data Rates for GSM Evolution, Nanotechnology, Electrical engineering, Computer science, Voltage, Engineering, Geometry, Telecommunications, Mathematics, Diode, Layer (electronics)Top concepts (fields/topics) attached by OpenAlex
- Cited by
-
1Total citation count in OpenAlex
- Citations by year (recent)
-
2021: 1Per-year citation counts (last 5 years)
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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