Impact of Gate Stack Layer Composition on Dynamic Threshold Voltage and Analog Parameters of Ge pMOSFETs Article Swipe
Alberto Vinícius de Oliveira
,
Paula Ghedini Der Agopian
,
João Antônio Martino
,
Eddy Simoen
,
Cor Claeys
,
Hans Mertens
,
Nadine Collaert
,
Aaron Thean
·
YOU?
·
· 2020
· Open Access
·
· DOI: https://doi.org/10.29292/jics.v11i1.424
YOU?
·
· 2020
· Open Access
·
· DOI: https://doi.org/10.29292/jics.v11i1.424
One of the main challenging issues for germanium (Ge) devices is the gate stack engineering which determines the interface state density (NIT) and the associated channel/oxide interface quality. This paper shows how this issue can play a role in p-channel Ge MOSFETs considering both the operation mode, i.e., comparing conventional, dynamic threshold voltage (DT, where VBS = VGS) and enhanced dynamic threshold voltage (eDT, where VBS=k*VGS) modes, and the main analog parameters like the Early voltage (VEA) and intrinsic voltage gain (AV). Moreover, the impact of different HfO2/Al2O3 gate stack thicknesses is under evaluation. Although the thinnest Al2O3 layer degrades all evaluated parameters, specifically: lower VEA and AV, higher drain current hysteresis and subthreshold swing (SS) due to the higher NIT, the dynamic threshold voltage showed to be an effective mode to strongly minimize the hysteresis effects and improves up to 60% in eDT (k = 2) mode compared to the conventional mode (k = 0), thanks to the dynamic threshold voltage reduction.
Related Topics
Concepts
Threshold voltage
Materials science
Stack (abstract data type)
Hysteresis
Optoelectronics
Voltage
Subthreshold conduction
Germanium
MOSFET
Overdrive voltage
Electrical engineering
Electronic engineering
Computer science
Transistor
Physics
Silicon
Condensed matter physics
Engineering
Programming language
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.29292/jics.v11i1.424
- https://jics.org.br/ojs/index.php/JICS/article/download/424/266
- OA Status
- diamond
- Cited By
- 1
- References
- 20
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2587768936
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
-
https://openalex.org/W2587768936Canonical identifier for this work in OpenAlex
- DOI
-
https://doi.org/10.29292/jics.v11i1.424Digital Object Identifier
- Title
-
Impact of Gate Stack Layer Composition on Dynamic Threshold Voltage and Analog Parameters of Ge pMOSFETsWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2020Year of publication
- Publication date
-
2020-12-28Full publication date if available
- Authors
-
Alberto Vinícius de Oliveira, Paula Ghedini Der Agopian, João Antônio Martino, Eddy Simoen, Cor Claeys, Hans Mertens, Nadine Collaert, Aaron TheanList of authors in order
- Landing page
-
https://doi.org/10.29292/jics.v11i1.424Publisher landing page
- PDF URL
-
https://jics.org.br/ojs/index.php/JICS/article/download/424/266Direct link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
diamondOpen access status per OpenAlex
- OA URL
-
https://jics.org.br/ojs/index.php/JICS/article/download/424/266Direct OA link when available
- Concepts
-
Threshold voltage, Materials science, Stack (abstract data type), Hysteresis, Optoelectronics, Voltage, Subthreshold conduction, Germanium, MOSFET, Overdrive voltage, Electrical engineering, Electronic engineering, Computer science, Transistor, Physics, Silicon, Condensed matter physics, Engineering, Programming languageTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
1Total citation count in OpenAlex
- Citations by year (recent)
-
2017: 1Per-year citation counts (last 5 years)
- References (count)
-
20Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
Full payload
| id | https://openalex.org/W2587768936 |
|---|---|
| doi | https://doi.org/10.29292/jics.v11i1.424 |
| ids.doi | https://doi.org/10.29292/jics.v11i1.424 |
| ids.mag | 2587768936 |
| ids.openalex | https://openalex.org/W2587768936 |
| fwci | 0.0 |
| type | article |
| title | Impact of Gate Stack Layer Composition on Dynamic Threshold Voltage and Analog Parameters of Ge pMOSFETs |
| biblio.issue | 1 |
| biblio.volume | 11 |
| biblio.last_page | 12 |
| biblio.first_page | 7 |
| topics[0].id | https://openalex.org/T10472 |
| topics[0].field.id | https://openalex.org/fields/22 |
| topics[0].field.display_name | Engineering |
| topics[0].score | 1.0 |
| topics[0].domain.id | https://openalex.org/domains/3 |
| topics[0].domain.display_name | Physical Sciences |
| topics[0].subfield.id | https://openalex.org/subfields/2208 |
| topics[0].subfield.display_name | Electrical and Electronic Engineering |
| topics[0].display_name | Semiconductor materials and devices |
| topics[1].id | https://openalex.org/T10558 |
| topics[1].field.id | https://openalex.org/fields/22 |
| topics[1].field.display_name | Engineering |
| topics[1].score | 1.0 |
| topics[1].domain.id | https://openalex.org/domains/3 |
| topics[1].domain.display_name | Physical Sciences |
| topics[1].subfield.id | https://openalex.org/subfields/2208 |
| topics[1].subfield.display_name | Electrical and Electronic Engineering |
| topics[1].display_name | Advancements in Semiconductor Devices and Circuit Design |
| topics[2].id | https://openalex.org/T12808 |
| topics[2].field.id | https://openalex.org/fields/22 |
| topics[2].field.display_name | Engineering |
| topics[2].score | 0.9998999834060669 |
| topics[2].domain.id | https://openalex.org/domains/3 |
| topics[2].domain.display_name | Physical Sciences |
| topics[2].subfield.id | https://openalex.org/subfields/2208 |
| topics[2].subfield.display_name | Electrical and Electronic Engineering |
| topics[2].display_name | Ferroelectric and Negative Capacitance Devices |
| is_xpac | False |
| apc_list | |
| apc_paid | |
| concepts[0].id | https://openalex.org/C195370968 |
| concepts[0].level | 4 |
| concepts[0].score | 0.8081989288330078 |
| concepts[0].wikidata | https://www.wikidata.org/wiki/Q1754002 |
| concepts[0].display_name | Threshold voltage |
| concepts[1].id | https://openalex.org/C192562407 |
| concepts[1].level | 0 |
| concepts[1].score | 0.6991788148880005 |
| concepts[1].wikidata | https://www.wikidata.org/wiki/Q228736 |
| concepts[1].display_name | Materials science |
| concepts[2].id | https://openalex.org/C9395851 |
| concepts[2].level | 2 |
| concepts[2].score | 0.6385236382484436 |
| concepts[2].wikidata | https://www.wikidata.org/wiki/Q177929 |
| concepts[2].display_name | Stack (abstract data type) |
| concepts[3].id | https://openalex.org/C123299182 |
| concepts[3].level | 2 |
| concepts[3].score | 0.6331347227096558 |
| concepts[3].wikidata | https://www.wikidata.org/wiki/Q190837 |
| concepts[3].display_name | Hysteresis |
| concepts[4].id | https://openalex.org/C49040817 |
| concepts[4].level | 1 |
| concepts[4].score | 0.5988355875015259 |
| concepts[4].wikidata | https://www.wikidata.org/wiki/Q193091 |
| concepts[4].display_name | Optoelectronics |
| concepts[5].id | https://openalex.org/C165801399 |
| concepts[5].level | 2 |
| concepts[5].score | 0.5762602090835571 |
| concepts[5].wikidata | https://www.wikidata.org/wiki/Q25428 |
| concepts[5].display_name | Voltage |
| concepts[6].id | https://openalex.org/C156465305 |
| concepts[6].level | 4 |
| concepts[6].score | 0.5381627082824707 |
| concepts[6].wikidata | https://www.wikidata.org/wiki/Q1658601 |
| concepts[6].display_name | Subthreshold conduction |
| concepts[7].id | https://openalex.org/C550623735 |
| concepts[7].level | 3 |
| concepts[7].score | 0.4467591643333435 |
| concepts[7].wikidata | https://www.wikidata.org/wiki/Q867 |
| concepts[7].display_name | Germanium |
| concepts[8].id | https://openalex.org/C2778413303 |
| concepts[8].level | 4 |
| concepts[8].score | 0.43406814336776733 |
| concepts[8].wikidata | https://www.wikidata.org/wiki/Q210793 |
| concepts[8].display_name | MOSFET |
| concepts[9].id | https://openalex.org/C195905723 |
| concepts[9].level | 5 |
| concepts[9].score | 0.4257822036743164 |
| concepts[9].wikidata | https://www.wikidata.org/wiki/Q7113634 |
| concepts[9].display_name | Overdrive voltage |
| concepts[10].id | https://openalex.org/C119599485 |
| concepts[10].level | 1 |
| concepts[10].score | 0.4076566994190216 |
| concepts[10].wikidata | https://www.wikidata.org/wiki/Q43035 |
| concepts[10].display_name | Electrical engineering |
| concepts[11].id | https://openalex.org/C24326235 |
| concepts[11].level | 1 |
| concepts[11].score | 0.3358212113380432 |
| concepts[11].wikidata | https://www.wikidata.org/wiki/Q126095 |
| concepts[11].display_name | Electronic engineering |
| concepts[12].id | https://openalex.org/C41008148 |
| concepts[12].level | 0 |
| concepts[12].score | 0.22434574365615845 |
| concepts[12].wikidata | https://www.wikidata.org/wiki/Q21198 |
| concepts[12].display_name | Computer science |
| concepts[13].id | https://openalex.org/C172385210 |
| concepts[13].level | 3 |
| concepts[13].score | 0.20549342036247253 |
| concepts[13].wikidata | https://www.wikidata.org/wiki/Q5339 |
| concepts[13].display_name | Transistor |
| concepts[14].id | https://openalex.org/C121332964 |
| concepts[14].level | 0 |
| concepts[14].score | 0.17970731854438782 |
| concepts[14].wikidata | https://www.wikidata.org/wiki/Q413 |
| concepts[14].display_name | Physics |
| concepts[15].id | https://openalex.org/C544956773 |
| concepts[15].level | 2 |
| concepts[15].score | 0.17060095071792603 |
| concepts[15].wikidata | https://www.wikidata.org/wiki/Q670 |
| concepts[15].display_name | Silicon |
| concepts[16].id | https://openalex.org/C26873012 |
| concepts[16].level | 1 |
| concepts[16].score | 0.16642364859580994 |
| concepts[16].wikidata | https://www.wikidata.org/wiki/Q214781 |
| concepts[16].display_name | Condensed matter physics |
| concepts[17].id | https://openalex.org/C127413603 |
| concepts[17].level | 0 |
| concepts[17].score | 0.13937464356422424 |
| concepts[17].wikidata | https://www.wikidata.org/wiki/Q11023 |
| concepts[17].display_name | Engineering |
| concepts[18].id | https://openalex.org/C199360897 |
| concepts[18].level | 1 |
| concepts[18].score | 0.0 |
| concepts[18].wikidata | https://www.wikidata.org/wiki/Q9143 |
| concepts[18].display_name | Programming language |
| keywords[0].id | https://openalex.org/keywords/threshold-voltage |
| keywords[0].score | 0.8081989288330078 |
| keywords[0].display_name | Threshold voltage |
| keywords[1].id | https://openalex.org/keywords/materials-science |
| keywords[1].score | 0.6991788148880005 |
| keywords[1].display_name | Materials science |
| keywords[2].id | https://openalex.org/keywords/stack |
| keywords[2].score | 0.6385236382484436 |
| keywords[2].display_name | Stack (abstract data type) |
| keywords[3].id | https://openalex.org/keywords/hysteresis |
| keywords[3].score | 0.6331347227096558 |
| keywords[3].display_name | Hysteresis |
| keywords[4].id | https://openalex.org/keywords/optoelectronics |
| keywords[4].score | 0.5988355875015259 |
| keywords[4].display_name | Optoelectronics |
| keywords[5].id | https://openalex.org/keywords/voltage |
| keywords[5].score | 0.5762602090835571 |
| keywords[5].display_name | Voltage |
| keywords[6].id | https://openalex.org/keywords/subthreshold-conduction |
| keywords[6].score | 0.5381627082824707 |
| keywords[6].display_name | Subthreshold conduction |
| keywords[7].id | https://openalex.org/keywords/germanium |
| keywords[7].score | 0.4467591643333435 |
| keywords[7].display_name | Germanium |
| keywords[8].id | https://openalex.org/keywords/mosfet |
| keywords[8].score | 0.43406814336776733 |
| keywords[8].display_name | MOSFET |
| keywords[9].id | https://openalex.org/keywords/overdrive-voltage |
| keywords[9].score | 0.4257822036743164 |
| keywords[9].display_name | Overdrive voltage |
| keywords[10].id | https://openalex.org/keywords/electrical-engineering |
| keywords[10].score | 0.4076566994190216 |
| keywords[10].display_name | Electrical engineering |
| keywords[11].id | https://openalex.org/keywords/electronic-engineering |
| keywords[11].score | 0.3358212113380432 |
| keywords[11].display_name | Electronic engineering |
| keywords[12].id | https://openalex.org/keywords/computer-science |
| keywords[12].score | 0.22434574365615845 |
| keywords[12].display_name | Computer science |
| keywords[13].id | https://openalex.org/keywords/transistor |
| keywords[13].score | 0.20549342036247253 |
| keywords[13].display_name | Transistor |
| keywords[14].id | https://openalex.org/keywords/physics |
| keywords[14].score | 0.17970731854438782 |
| keywords[14].display_name | Physics |
| keywords[15].id | https://openalex.org/keywords/silicon |
| keywords[15].score | 0.17060095071792603 |
| keywords[15].display_name | Silicon |
| keywords[16].id | https://openalex.org/keywords/condensed-matter-physics |
| keywords[16].score | 0.16642364859580994 |
| keywords[16].display_name | Condensed matter physics |
| keywords[17].id | https://openalex.org/keywords/engineering |
| keywords[17].score | 0.13937464356422424 |
| keywords[17].display_name | Engineering |
| language | en |
| locations[0].id | doi:10.29292/jics.v11i1.424 |
| locations[0].is_oa | True |
| locations[0].source.id | https://openalex.org/S4210174384 |
| locations[0].source.issn | 1807-1953, 1872-0234 |
| locations[0].source.type | journal |
| locations[0].source.is_oa | True |
| locations[0].source.issn_l | 1807-1953 |
| locations[0].source.is_core | True |
| locations[0].source.is_in_doaj | False |
| locations[0].source.display_name | Journal of Integrated Circuits and Systems |
| locations[0].source.host_organization | |
| locations[0].source.host_organization_name | |
| locations[0].license | |
| locations[0].pdf_url | https://jics.org.br/ojs/index.php/JICS/article/download/424/266 |
| locations[0].version | publishedVersion |
| locations[0].raw_type | journal-article |
| locations[0].license_id | |
| locations[0].is_accepted | True |
| locations[0].is_published | True |
| locations[0].raw_source_name | Journal of Integrated Circuits and Systems |
| locations[0].landing_page_url | https://doi.org/10.29292/jics.v11i1.424 |
| indexed_in | crossref |
| authorships[0].author.id | https://openalex.org/A5054787373 |
| authorships[0].author.orcid | https://orcid.org/0000-0002-9289-5897 |
| authorships[0].author.display_name | Alberto Vinícius de Oliveira |
| authorships[0].countries | BR |
| authorships[0].affiliations[0].institution_ids | https://openalex.org/I17974374 |
| authorships[0].affiliations[0].raw_affiliation_string | LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil |
| authorships[0].institutions[0].id | https://openalex.org/I17974374 |
| authorships[0].institutions[0].ror | https://ror.org/036rp1748 |
| authorships[0].institutions[0].type | education |
| authorships[0].institutions[0].lineage | https://openalex.org/I17974374 |
| authorships[0].institutions[0].country_code | BR |
| authorships[0].institutions[0].display_name | Universidade de São Paulo |
| authorships[0].author_position | first |
| authorships[0].raw_author_name | Alberto V. Oliveira |
| authorships[0].is_corresponding | False |
| authorships[0].raw_affiliation_strings | LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil |
| authorships[1].author.id | https://openalex.org/A5027983326 |
| authorships[1].author.orcid | https://orcid.org/0000-0002-0886-7798 |
| authorships[1].author.display_name | Paula Ghedini Der Agopian |
| authorships[1].countries | BR |
| authorships[1].affiliations[0].institution_ids | https://openalex.org/I17974374 |
| authorships[1].affiliations[0].raw_affiliation_string | LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil |
| authorships[1].institutions[0].id | https://openalex.org/I17974374 |
| authorships[1].institutions[0].ror | https://ror.org/036rp1748 |
| authorships[1].institutions[0].type | education |
| authorships[1].institutions[0].lineage | https://openalex.org/I17974374 |
| authorships[1].institutions[0].country_code | BR |
| authorships[1].institutions[0].display_name | Universidade de São Paulo |
| authorships[1].author_position | middle |
| authorships[1].raw_author_name | Paula Ghedini Der Agopian |
| authorships[1].is_corresponding | False |
| authorships[1].raw_affiliation_strings | LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil |
| authorships[2].author.id | https://openalex.org/A5051385065 |
| authorships[2].author.orcid | https://orcid.org/0000-0001-8121-6513 |
| authorships[2].author.display_name | João Antônio Martino |
| authorships[2].countries | BR |
| authorships[2].affiliations[0].institution_ids | https://openalex.org/I17974374 |
| authorships[2].affiliations[0].raw_affiliation_string | LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil |
| authorships[2].institutions[0].id | https://openalex.org/I17974374 |
| authorships[2].institutions[0].ror | https://ror.org/036rp1748 |
| authorships[2].institutions[0].type | education |
| authorships[2].institutions[0].lineage | https://openalex.org/I17974374 |
| authorships[2].institutions[0].country_code | BR |
| authorships[2].institutions[0].display_name | Universidade de São Paulo |
| authorships[2].author_position | middle |
| authorships[2].raw_author_name | João Antonio Martino |
| authorships[2].is_corresponding | False |
| authorships[2].raw_affiliation_strings | LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil |
| authorships[3].author.id | https://openalex.org/A5030275438 |
| authorships[3].author.orcid | https://orcid.org/0000-0002-5218-4046 |
| authorships[3].author.display_name | Eddy Simoen |
| authorships[3].countries | BE |
| authorships[3].affiliations[0].institution_ids | https://openalex.org/I4210114974 |
| authorships[3].affiliations[0].raw_affiliation_string | Imec, Leuven, Belgium |
| authorships[3].institutions[0].id | https://openalex.org/I4210114974 |
| authorships[3].institutions[0].ror | https://ror.org/02kcbn207 |
| authorships[3].institutions[0].type | nonprofit |
| authorships[3].institutions[0].lineage | https://openalex.org/I4210114974 |
| authorships[3].institutions[0].country_code | BE |
| authorships[3].institutions[0].display_name | IMEC |
| authorships[3].author_position | middle |
| authorships[3].raw_author_name | Eddy Simoen |
| authorships[3].is_corresponding | False |
| authorships[3].raw_affiliation_strings | Imec, Leuven, Belgium |
| authorships[4].author.id | https://openalex.org/A5056526537 |
| authorships[4].author.orcid | https://orcid.org/0000-0002-6634-4709 |
| authorships[4].author.display_name | Cor Claeys |
| authorships[4].countries | BE |
| authorships[4].affiliations[0].institution_ids | https://openalex.org/I99464096 |
| authorships[4].affiliations[0].raw_affiliation_string | KU Leuven, Leuven, Belgium |
| authorships[4].affiliations[1].institution_ids | https://openalex.org/I4210114974 |
| authorships[4].affiliations[1].raw_affiliation_string | Imec, Leuven, Belgium |
| authorships[4].institutions[0].id | https://openalex.org/I4210114974 |
| authorships[4].institutions[0].ror | https://ror.org/02kcbn207 |
| authorships[4].institutions[0].type | nonprofit |
| authorships[4].institutions[0].lineage | https://openalex.org/I4210114974 |
| authorships[4].institutions[0].country_code | BE |
| authorships[4].institutions[0].display_name | IMEC |
| authorships[4].institutions[1].id | https://openalex.org/I99464096 |
| authorships[4].institutions[1].ror | https://ror.org/05f950310 |
| authorships[4].institutions[1].type | education |
| authorships[4].institutions[1].lineage | https://openalex.org/I99464096 |
| authorships[4].institutions[1].country_code | BE |
| authorships[4].institutions[1].display_name | KU Leuven |
| authorships[4].author_position | middle |
| authorships[4].raw_author_name | Cor Claeys |
| authorships[4].is_corresponding | False |
| authorships[4].raw_affiliation_strings | Imec, Leuven, Belgium, KU Leuven, Leuven, Belgium |
| authorships[5].author.id | https://openalex.org/A5028915592 |
| authorships[5].author.orcid | https://orcid.org/0000-0002-3392-6892 |
| authorships[5].author.display_name | Hans Mertens |
| authorships[5].countries | BE |
| authorships[5].affiliations[0].institution_ids | https://openalex.org/I4210114974 |
| authorships[5].affiliations[0].raw_affiliation_string | Imec, Leuven, Belgium |
| authorships[5].institutions[0].id | https://openalex.org/I4210114974 |
| authorships[5].institutions[0].ror | https://ror.org/02kcbn207 |
| authorships[5].institutions[0].type | nonprofit |
| authorships[5].institutions[0].lineage | https://openalex.org/I4210114974 |
| authorships[5].institutions[0].country_code | BE |
| authorships[5].institutions[0].display_name | IMEC |
| authorships[5].author_position | middle |
| authorships[5].raw_author_name | Hans Mertens |
| authorships[5].is_corresponding | False |
| authorships[5].raw_affiliation_strings | Imec, Leuven, Belgium |
| authorships[6].author.id | https://openalex.org/A5046242688 |
| authorships[6].author.orcid | https://orcid.org/0000-0002-8062-3165 |
| authorships[6].author.display_name | Nadine Collaert |
| authorships[6].countries | BE |
| authorships[6].affiliations[0].institution_ids | https://openalex.org/I4210114974 |
| authorships[6].affiliations[0].raw_affiliation_string | Imec, Leuven, Belgium |
| authorships[6].institutions[0].id | https://openalex.org/I4210114974 |
| authorships[6].institutions[0].ror | https://ror.org/02kcbn207 |
| authorships[6].institutions[0].type | nonprofit |
| authorships[6].institutions[0].lineage | https://openalex.org/I4210114974 |
| authorships[6].institutions[0].country_code | BE |
| authorships[6].institutions[0].display_name | IMEC |
| authorships[6].author_position | middle |
| authorships[6].raw_author_name | Nadine Collaert |
| authorships[6].is_corresponding | False |
| authorships[6].raw_affiliation_strings | Imec, Leuven, Belgium |
| authorships[7].author.id | https://openalex.org/A5104440640 |
| authorships[7].author.orcid | |
| authorships[7].author.display_name | Aaron Thean |
| authorships[7].countries | BE |
| authorships[7].affiliations[0].institution_ids | https://openalex.org/I4210114974 |
| authorships[7].affiliations[0].raw_affiliation_string | Imec, Leuven, Belgium |
| authorships[7].institutions[0].id | https://openalex.org/I4210114974 |
| authorships[7].institutions[0].ror | https://ror.org/02kcbn207 |
| authorships[7].institutions[0].type | nonprofit |
| authorships[7].institutions[0].lineage | https://openalex.org/I4210114974 |
| authorships[7].institutions[0].country_code | BE |
| authorships[7].institutions[0].display_name | IMEC |
| authorships[7].author_position | last |
| authorships[7].raw_author_name | Aaron Thean |
| authorships[7].is_corresponding | False |
| authorships[7].raw_affiliation_strings | Imec, Leuven, Belgium |
| has_content.pdf | True |
| has_content.grobid_xml | True |
| is_paratext | False |
| open_access.is_oa | True |
| open_access.oa_url | https://jics.org.br/ojs/index.php/JICS/article/download/424/266 |
| open_access.oa_status | diamond |
| open_access.any_repository_has_fulltext | False |
| created_date | 2025-10-10T00:00:00 |
| display_name | Impact of Gate Stack Layer Composition on Dynamic Threshold Voltage and Analog Parameters of Ge pMOSFETs |
| has_fulltext | True |
| is_retracted | False |
| updated_date | 2025-11-06T03:46:38.306776 |
| primary_topic.id | https://openalex.org/T10472 |
| primary_topic.field.id | https://openalex.org/fields/22 |
| primary_topic.field.display_name | Engineering |
| primary_topic.score | 1.0 |
| primary_topic.domain.id | https://openalex.org/domains/3 |
| primary_topic.domain.display_name | Physical Sciences |
| primary_topic.subfield.id | https://openalex.org/subfields/2208 |
| primary_topic.subfield.display_name | Electrical and Electronic Engineering |
| primary_topic.display_name | Semiconductor materials and devices |
| related_works | https://openalex.org/W4220771873, https://openalex.org/W2019821901, https://openalex.org/W854977561, https://openalex.org/W2159572017, https://openalex.org/W2008663203, https://openalex.org/W2558216017, https://openalex.org/W3140942425, https://openalex.org/W2121595565, https://openalex.org/W2364773027, https://openalex.org/W2587768936 |
| cited_by_count | 1 |
| counts_by_year[0].year | 2017 |
| counts_by_year[0].cited_by_count | 1 |
| locations_count | 1 |
| best_oa_location.id | doi:10.29292/jics.v11i1.424 |
| best_oa_location.is_oa | True |
| best_oa_location.source.id | https://openalex.org/S4210174384 |
| best_oa_location.source.issn | 1807-1953, 1872-0234 |
| best_oa_location.source.type | journal |
| best_oa_location.source.is_oa | True |
| best_oa_location.source.issn_l | 1807-1953 |
| best_oa_location.source.is_core | True |
| best_oa_location.source.is_in_doaj | False |
| best_oa_location.source.display_name | Journal of Integrated Circuits and Systems |
| best_oa_location.source.host_organization | |
| best_oa_location.source.host_organization_name | |
| best_oa_location.license | |
| best_oa_location.pdf_url | https://jics.org.br/ojs/index.php/JICS/article/download/424/266 |
| best_oa_location.version | publishedVersion |
| best_oa_location.raw_type | journal-article |
| best_oa_location.license_id | |
| best_oa_location.is_accepted | True |
| best_oa_location.is_published | True |
| best_oa_location.raw_source_name | Journal of Integrated Circuits and Systems |
| best_oa_location.landing_page_url | https://doi.org/10.29292/jics.v11i1.424 |
| primary_location.id | doi:10.29292/jics.v11i1.424 |
| primary_location.is_oa | True |
| primary_location.source.id | https://openalex.org/S4210174384 |
| primary_location.source.issn | 1807-1953, 1872-0234 |
| primary_location.source.type | journal |
| primary_location.source.is_oa | True |
| primary_location.source.issn_l | 1807-1953 |
| primary_location.source.is_core | True |
| primary_location.source.is_in_doaj | False |
| primary_location.source.display_name | Journal of Integrated Circuits and Systems |
| primary_location.source.host_organization | |
| primary_location.source.host_organization_name | |
| primary_location.license | |
| primary_location.pdf_url | https://jics.org.br/ojs/index.php/JICS/article/download/424/266 |
| primary_location.version | publishedVersion |
| primary_location.raw_type | journal-article |
| primary_location.license_id | |
| primary_location.is_accepted | True |
| primary_location.is_published | True |
| primary_location.raw_source_name | Journal of Integrated Circuits and Systems |
| primary_location.landing_page_url | https://doi.org/10.29292/jics.v11i1.424 |
| publication_date | 2020-12-28 |
| publication_year | 2020 |
| referenced_works | https://openalex.org/W2172216726, https://openalex.org/W6661631449, https://openalex.org/W2157321309, https://openalex.org/W1972078414, https://openalex.org/W2074692444, https://openalex.org/W1521231718, https://openalex.org/W1939303656, https://openalex.org/W6655345954, https://openalex.org/W2270647980, https://openalex.org/W2142753242, https://openalex.org/W2034833523, https://openalex.org/W347721362, https://openalex.org/W2067346911, https://openalex.org/W2059269114, https://openalex.org/W2019196198, https://openalex.org/W2002849752, https://openalex.org/W2029407263, https://openalex.org/W4233811816, https://openalex.org/W2044263278, https://openalex.org/W2148341910 |
| referenced_works_count | 20 |
| abstract_inverted_index.= | 56, 145, 154 |
| abstract_inverted_index.a | 36 |
| abstract_inverted_index.(k | 144, 153 |
| abstract_inverted_index.2) | 146 |
| abstract_inverted_index.Ge | 40 |
| abstract_inverted_index.an | 128 |
| abstract_inverted_index.be | 127 |
| abstract_inverted_index.in | 38, 142 |
| abstract_inverted_index.is | 10, 91 |
| abstract_inverted_index.of | 1, 85 |
| abstract_inverted_index.to | 117, 126, 131, 140, 149, 157 |
| abstract_inverted_index.up | 139 |
| abstract_inverted_index.0), | 155 |
| abstract_inverted_index.60% | 141 |
| abstract_inverted_index.AV, | 107 |
| abstract_inverted_index.One | 0 |
| abstract_inverted_index.VBS | 55 |
| abstract_inverted_index.VEA | 105 |
| abstract_inverted_index.all | 100 |
| abstract_inverted_index.and | 22, 58, 67, 77, 106, 112, 137 |
| abstract_inverted_index.can | 34 |
| abstract_inverted_index.due | 116 |
| abstract_inverted_index.eDT | 143 |
| abstract_inverted_index.for | 6 |
| abstract_inverted_index.how | 31 |
| abstract_inverted_index.the | 2, 11, 17, 23, 44, 68, 73, 83, 95, 118, 121, 134, 150, 158 |
| abstract_inverted_index.(DT, | 53 |
| abstract_inverted_index.(Ge) | 8 |
| abstract_inverted_index.(SS) | 115 |
| abstract_inverted_index.NIT, | 120 |
| abstract_inverted_index.This | 28 |
| abstract_inverted_index.VGS) | 57 |
| abstract_inverted_index.both | 43 |
| abstract_inverted_index.gain | 80 |
| abstract_inverted_index.gate | 12, 88 |
| abstract_inverted_index.like | 72 |
| abstract_inverted_index.main | 3, 69 |
| abstract_inverted_index.mode | 130, 147, 152 |
| abstract_inverted_index.play | 35 |
| abstract_inverted_index.role | 37 |
| abstract_inverted_index.this | 32 |
| abstract_inverted_index.(AV). | 81 |
| abstract_inverted_index.(NIT) | 21 |
| abstract_inverted_index.(VEA) | 76 |
| abstract_inverted_index.(eDT, | 63 |
| abstract_inverted_index.Al2O3 | 97 |
| abstract_inverted_index.Early | 74 |
| abstract_inverted_index.drain | 109 |
| abstract_inverted_index.i.e., | 47 |
| abstract_inverted_index.issue | 33 |
| abstract_inverted_index.layer | 98 |
| abstract_inverted_index.lower | 104 |
| abstract_inverted_index.mode, | 46 |
| abstract_inverted_index.paper | 29 |
| abstract_inverted_index.shows | 30 |
| abstract_inverted_index.stack | 13, 89 |
| abstract_inverted_index.state | 19 |
| abstract_inverted_index.swing | 114 |
| abstract_inverted_index.under | 92 |
| abstract_inverted_index.where | 54, 64 |
| abstract_inverted_index.which | 15 |
| abstract_inverted_index.analog | 70 |
| abstract_inverted_index.higher | 108, 119 |
| abstract_inverted_index.impact | 84 |
| abstract_inverted_index.issues | 5 |
| abstract_inverted_index.modes, | 66 |
| abstract_inverted_index.showed | 125 |
| abstract_inverted_index.thanks | 156 |
| abstract_inverted_index.MOSFETs | 41 |
| abstract_inverted_index.current | 110 |
| abstract_inverted_index.density | 20 |
| abstract_inverted_index.devices | 9 |
| abstract_inverted_index.dynamic | 50, 60, 122, 159 |
| abstract_inverted_index.effects | 136 |
| abstract_inverted_index.voltage | 52, 62, 75, 79, 124, 161 |
| abstract_inverted_index.Although | 94 |
| abstract_inverted_index.compared | 148 |
| abstract_inverted_index.degrades | 99 |
| abstract_inverted_index.enhanced | 59 |
| abstract_inverted_index.improves | 138 |
| abstract_inverted_index.minimize | 133 |
| abstract_inverted_index.quality. | 27 |
| abstract_inverted_index.strongly | 132 |
| abstract_inverted_index.thinnest | 96 |
| abstract_inverted_index.Moreover, | 82 |
| abstract_inverted_index.comparing | 48 |
| abstract_inverted_index.different | 86 |
| abstract_inverted_index.effective | 129 |
| abstract_inverted_index.evaluated | 101 |
| abstract_inverted_index.germanium | 7 |
| abstract_inverted_index.interface | 18, 26 |
| abstract_inverted_index.intrinsic | 78 |
| abstract_inverted_index.operation | 45 |
| abstract_inverted_index.p-channel | 39 |
| abstract_inverted_index.threshold | 51, 61, 123, 160 |
| abstract_inverted_index.HfO2/Al2O3 | 87 |
| abstract_inverted_index.VBS=k*VGS) | 65 |
| abstract_inverted_index.associated | 24 |
| abstract_inverted_index.determines | 16 |
| abstract_inverted_index.hysteresis | 111, 135 |
| abstract_inverted_index.parameters | 71 |
| abstract_inverted_index.reduction. | 162 |
| abstract_inverted_index.challenging | 4 |
| abstract_inverted_index.considering | 42 |
| abstract_inverted_index.engineering | 14 |
| abstract_inverted_index.evaluation. | 93 |
| abstract_inverted_index.parameters, | 102 |
| abstract_inverted_index.thicknesses | 90 |
| abstract_inverted_index.conventional | 151 |
| abstract_inverted_index.subthreshold | 113 |
| abstract_inverted_index.channel/oxide | 25 |
| abstract_inverted_index.conventional, | 49 |
| abstract_inverted_index.specifically: | 103 |
| cited_by_percentile_year.max | 94 |
| cited_by_percentile_year.min | 90 |
| countries_distinct_count | 2 |
| institutions_distinct_count | 8 |
| sustainable_development_goals[0].id | https://metadata.un.org/sdg/7 |
| sustainable_development_goals[0].score | 0.6800000071525574 |
| sustainable_development_goals[0].display_name | Affordable and clean energy |
| citation_normalized_percentile.value | 0.00092676 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |