Impact of ion implantation on the performance of AlGaInP Micro-LEDs Article Swipe
Wen‐Jen Chiang
,
Yen‐Ru Chen
,
Yu-Chih Hsu
,
S.-H. Lo
,
Anoop Kumar Singh
,
Hsin-Yu Chou
,
Po‐Liang Liu
,
Dong‐Sing Wuu
·
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1016/j.mtadv.2024.100552
YOU?
·
· 2024
· Open Access
·
· DOI: https://doi.org/10.1016/j.mtadv.2024.100552
This study makes significant contributions to the field by comprehensively examining the impact of various ion implantation techniques on the performance of aluminum gallium indium phosphide red micro-light-emitting diodes (micro-LEDs), with a particular focus on enhancing material insulation and optoelectronic properties. By utilizing stopping and range of ions in matter (SRIM) simulation, this research introduces a gradual energy implantation scheme to optimize ion distribution. This novel approach is demonstrated to markedly improve device performance, outperforming conventional single energy implantation methods. Additionally, this study investigates the effects of ion implantation using three elements of varying atomic masses: argon (Ar), fluorine (F) and arsenic (As), combining SRIM simulations with empirical validation. The results reveal that, at equivalent dosages, As ions generate a greater number of vacancies, significantly enhancing the insulation characteristics of the semiconductor material. Notably, As ion implantation demonstrated superior performance in reducing leakage current and improving external quantum efficiency. These findings offer new perspectives on the design of insulation layers for future micro-LED technologies. Moreover, the research provides a detailed comparative analysis of the light output power and wavelength shift in micro-LEDs of varying pixel sizes. It elucidates how current crowding and thermal effects influence the optoelectronic performance, thereby underscoring the pivotal role of pixel size in determining device efficiency. The insights gained from this analysis present valuable scientific and technical guidance for the design of future micro-LED systems, particularly in the context of miniaturization and performance optimization. In sum, this study not only advances the optimization of ion implantation techniques but also presents practical and viable strategies for improving the insulation and overall performance of micro-LEDs.
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Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1016/j.mtadv.2024.100552
- OA Status
- gold
- Cited By
- 1
- References
- 29
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All OpenAlex metadata
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https://openalex.org/W4405860845Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1016/j.mtadv.2024.100552Digital Object Identifier
- Title
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Impact of ion implantation on the performance of AlGaInP Micro-LEDsWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
- Publication year
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2024Year of publication
- Publication date
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2024-12-28Full publication date if available
- Authors
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Wen‐Jen Chiang, Yen‐Ru Chen, Yu-Chih Hsu, S.-H. Lo, Anoop Kumar Singh, Hsin-Yu Chou, Po‐Liang Liu, Dong‐Sing WuuList of authors in order
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https://doi.org/10.1016/j.mtadv.2024.100552Publisher landing page
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YesWhether a free full text is available
- OA status
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goldOpen access status per OpenAlex
- OA URL
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https://doi.org/10.1016/j.mtadv.2024.100552Direct OA link when available
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Light-emitting diode, Optoelectronics, Ion, Materials science, Chemistry, Organic chemistryTop concepts (fields/topics) attached by OpenAlex
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1Total citation count in OpenAlex
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2025: 1Per-year citation counts (last 5 years)
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| abstract_inverted_index.stopping | 43 |
| abstract_inverted_index.superior | 138 |
| abstract_inverted_index.systems, | 228 |
| abstract_inverted_index.valuable | 217 |
| abstract_inverted_index.Moreover, | 164 |
| abstract_inverted_index.combining | 103 |
| abstract_inverted_index.empirical | 107 |
| abstract_inverted_index.enhancing | 35, 125 |
| abstract_inverted_index.examining | 10 |
| abstract_inverted_index.improving | 145, 259 |
| abstract_inverted_index.influence | 194 |
| abstract_inverted_index.material. | 132 |
| abstract_inverted_index.micro-LED | 162, 227 |
| abstract_inverted_index.phosphide | 25 |
| abstract_inverted_index.practical | 254 |
| abstract_inverted_index.technical | 220 |
| abstract_inverted_index.utilizing | 42 |
| abstract_inverted_index.elucidates | 187 |
| abstract_inverted_index.equivalent | 114 |
| abstract_inverted_index.insulation | 37, 127, 158, 261 |
| abstract_inverted_index.introduces | 54 |
| abstract_inverted_index.micro-LEDs | 181 |
| abstract_inverted_index.particular | 32 |
| abstract_inverted_index.scientific | 218 |
| abstract_inverted_index.strategies | 257 |
| abstract_inverted_index.techniques | 17, 250 |
| abstract_inverted_index.vacancies, | 123 |
| abstract_inverted_index.wavelength | 178 |
| abstract_inverted_index.comparative | 170 |
| abstract_inverted_index.determining | 207 |
| abstract_inverted_index.efficiency. | 148, 209 |
| abstract_inverted_index.micro-LEDs. | 266 |
| abstract_inverted_index.performance | 20, 139, 236, 264 |
| abstract_inverted_index.properties. | 40 |
| abstract_inverted_index.significant | 3 |
| abstract_inverted_index.simulation, | 51 |
| abstract_inverted_index.simulations | 105 |
| abstract_inverted_index.validation. | 108 |
| abstract_inverted_index.conventional | 75 |
| abstract_inverted_index.demonstrated | 68, 137 |
| abstract_inverted_index.implantation | 16, 58, 78, 88, 136, 249 |
| abstract_inverted_index.investigates | 83 |
| abstract_inverted_index.optimization | 246 |
| abstract_inverted_index.particularly | 229 |
| abstract_inverted_index.performance, | 73, 197 |
| abstract_inverted_index.perspectives | 153 |
| abstract_inverted_index.underscoring | 199 |
| abstract_inverted_index.(micro-LEDs), | 29 |
| abstract_inverted_index.Additionally, | 80 |
| abstract_inverted_index.contributions | 4 |
| abstract_inverted_index.distribution. | 63 |
| abstract_inverted_index.optimization. | 237 |
| abstract_inverted_index.outperforming | 74 |
| abstract_inverted_index.semiconductor | 131 |
| abstract_inverted_index.significantly | 124 |
| abstract_inverted_index.technologies. | 163 |
| abstract_inverted_index.optoelectronic | 39, 196 |
| abstract_inverted_index.characteristics | 128 |
| abstract_inverted_index.comprehensively | 9 |
| abstract_inverted_index.miniaturization | 234 |
| abstract_inverted_index.micro-light-emitting | 27 |
| cited_by_percentile_year.max | 95 |
| cited_by_percentile_year.min | 91 |
| countries_distinct_count | 0 |
| institutions_distinct_count | 8 |
| citation_normalized_percentile.value | 0.67334485 |
| citation_normalized_percentile.is_in_top_1_percent | False |
| citation_normalized_percentile.is_in_top_10_percent | False |