Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering Article Swipe

PDF

Guangnan Zhou , Fanming Zeng , Rongyu Gao , Qing Wang , Kai Cheng , Guangrui Xia , Hongyu Yu ·

YOU? · · 2021 · Open Access · · DOI: https://doi.org/10.48550/arxiv.2106.01495

We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold voltage and on-resistance. Time-dependent gate breakdown measurements reveal that the maximum gate drive voltage increases from 6.2 to 10.6 V for a 10-year lifetime with a 1% gate failure rate. This method effectively expands the operating voltage margin of the p-GaN gate HEMTs without any other additional process steps.

Related Topics

Electrical Engineering

Concepts

Materials science Optoelectronics Time-dependent gate oxide breakdown Breakdown voltage High-electron-mobility transistor Gate oxide Doping Reliability (semiconductor) Schottky barrier Voltage Electrical engineering Transistor Engineering Power (physics) Physics Diode Quantum mechanics

Metadata

Type: preprint
Language: en
Landing Page: http://arxiv.org/abs/2106.01495
PDF: https://arxiv.org/pdf/2106.01495
OA Status: green
Cited By: 1
References: 23
Related Works: 10
OpenAlex ID: https://openalex.org/W3169326328

All OpenAlex metadata

Raw OpenAlex JSON

OpenAlex ID: https://openalex.org/W3169326328

Canonical identifier for this work in OpenAlex
DOI: https://doi.org/10.48550/arxiv.2106.01495

Digital Object Identifier
Title: Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering

Work title
Type: preprint

OpenAlex work type
Language: en

Primary language
Publication year: 2021

Year of publication
Publication date: 2021-06-02

Full publication date if available
Authors: Guangnan Zhou, Fanming Zeng, Rongyu Gao, Qing Wang, Kai Cheng, Guangrui Xia, Hongyu Yu

List of authors in order
Landing page: https://arxiv.org/abs/2106.01495

Publisher landing page
PDF URL: https://arxiv.org/pdf/2106.01495

Direct link to full text PDF
Open access: Yes

Whether a free full text is available
OA status: green

Open access status per OpenAlex
OA URL: https://arxiv.org/pdf/2106.01495

Direct OA link when available
Concepts: Materials science, Optoelectronics, Time-dependent gate oxide breakdown, Breakdown voltage, High-electron-mobility transistor, Gate oxide, Doping, Reliability (semiconductor), Schottky barrier, Voltage, Electrical engineering, Transistor, Engineering, Power (physics), Physics, Diode, Quantum mechanics

Top concepts (fields/topics) attached by OpenAlex
Cited by: 1

Total citation count in OpenAlex
Citations by year (recent): 2023: 1

Per-year citation counts (last 5 years)
References (count): 23

Number of works referenced by this work
Related works (count): 10

Other works algorithmically related by OpenAlex

Full payload

id	https://openalex.org/W3169326328
doi	https://doi.org/10.48550/arxiv.2106.01495
ids.doi	https://doi.org/10.48550/arxiv.2106.01495
ids.mag	3169326328
ids.openalex	https://openalex.org/W3169326328
fwci
type	preprint
title	Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
biblio.issue
biblio.volume
biblio.last_page
biblio.first_page
topics[0].id	https://openalex.org/T10099
topics[0].field.id	https://openalex.org/fields/31
topics[0].field.display_name	Physics and Astronomy
topics[0].score	1.0
topics[0].domain.id	https://openalex.org/domains/3
topics[0].domain.display_name	Physical Sciences
topics[0].subfield.id	https://openalex.org/subfields/3104
topics[0].subfield.display_name	Condensed Matter Physics
topics[0].display_name	GaN-based semiconductor devices and materials
topics[1].id	https://openalex.org/T12529
topics[1].field.id	https://openalex.org/fields/25
topics[1].field.display_name	Materials Science
topics[1].score	0.9986000061035156
topics[1].domain.id	https://openalex.org/domains/3
topics[1].domain.display_name	Physical Sciences
topics[1].subfield.id	https://openalex.org/subfields/2504
topics[1].subfield.display_name	Electronic, Optical and Magnetic Materials
topics[1].display_name	Ga2O3 and related materials
topics[2].id	https://openalex.org/T10361
topics[2].field.id	https://openalex.org/fields/22
topics[2].field.display_name	Engineering
topics[2].score	0.9984999895095825
topics[2].domain.id	https://openalex.org/domains/3
topics[2].domain.display_name	Physical Sciences
topics[2].subfield.id	https://openalex.org/subfields/2208
topics[2].subfield.display_name	Electrical and Electronic Engineering
topics[2].display_name	Silicon Carbide Semiconductor Technologies
is_xpac	False
apc_list
apc_paid
concepts[0].id	https://openalex.org/C192562407
concepts[0].level	0
concepts[0].score	0.7407969236373901
concepts[0].wikidata	https://www.wikidata.org/wiki/Q228736
concepts[0].display_name	Materials science
concepts[1].id	https://openalex.org/C49040817
concepts[1].level	1
concepts[1].score	0.689082145690918
concepts[1].wikidata	https://www.wikidata.org/wiki/Q193091
concepts[1].display_name	Optoelectronics
concepts[2].id	https://openalex.org/C152909973
concepts[2].level	5
concepts[2].score	0.6455869674682617
concepts[2].wikidata	https://www.wikidata.org/wiki/Q7804816
concepts[2].display_name	Time-dependent gate oxide breakdown
concepts[3].id	https://openalex.org/C119321828
concepts[3].level	3
concepts[3].score	0.6439861059188843
concepts[3].wikidata	https://www.wikidata.org/wiki/Q1267190
concepts[3].display_name	Breakdown voltage
concepts[4].id	https://openalex.org/C162057924
concepts[4].level	4
concepts[4].score	0.610139787197113
concepts[4].wikidata	https://www.wikidata.org/wiki/Q1617706
concepts[4].display_name	High-electron-mobility transistor
concepts[5].id	https://openalex.org/C2361726
concepts[5].level	4
concepts[5].score	0.5254865288734436
concepts[5].wikidata	https://www.wikidata.org/wiki/Q5527031
concepts[5].display_name	Gate oxide
concepts[6].id	https://openalex.org/C57863236
concepts[6].level	2
concepts[6].score	0.5018429756164551
concepts[6].wikidata	https://www.wikidata.org/wiki/Q1130571
concepts[6].display_name	Doping
concepts[7].id	https://openalex.org/C43214815
concepts[7].level	3
concepts[7].score	0.5016632080078125
concepts[7].wikidata	https://www.wikidata.org/wiki/Q7310987
concepts[7].display_name	Reliability (semiconductor)
concepts[8].id	https://openalex.org/C16115445
concepts[8].level	3
concepts[8].score	0.4711533784866333
concepts[8].wikidata	https://www.wikidata.org/wiki/Q2391942
concepts[8].display_name	Schottky barrier
concepts[9].id	https://openalex.org/C165801399
concepts[9].level	2
concepts[9].score	0.3927225172519684
concepts[9].wikidata	https://www.wikidata.org/wiki/Q25428
concepts[9].display_name	Voltage
concepts[10].id	https://openalex.org/C119599485
concepts[10].level	1
concepts[10].score	0.3886876106262207
concepts[10].wikidata	https://www.wikidata.org/wiki/Q43035
concepts[10].display_name	Electrical engineering
concepts[11].id	https://openalex.org/C172385210
concepts[11].level	3
concepts[11].score	0.2856126129627228
concepts[11].wikidata	https://www.wikidata.org/wiki/Q5339
concepts[11].display_name	Transistor
concepts[12].id	https://openalex.org/C127413603
concepts[12].level	0
concepts[12].score	0.11563456058502197
concepts[12].wikidata	https://www.wikidata.org/wiki/Q11023
concepts[12].display_name	Engineering
concepts[13].id	https://openalex.org/C163258240
concepts[13].level	2
concepts[13].score	0.09329771995544434
concepts[13].wikidata	https://www.wikidata.org/wiki/Q25342
concepts[13].display_name	Power (physics)
concepts[14].id	https://openalex.org/C121332964
concepts[14].level	0
concepts[14].score	0.0837298035621643
concepts[14].wikidata	https://www.wikidata.org/wiki/Q413
concepts[14].display_name	Physics
concepts[15].id	https://openalex.org/C78434282
concepts[15].level	2
concepts[15].score	0.0
concepts[15].wikidata	https://www.wikidata.org/wiki/Q11656
concepts[15].display_name	Diode
concepts[16].id	https://openalex.org/C62520636
concepts[16].level	1
concepts[16].score	0.0
concepts[16].wikidata	https://www.wikidata.org/wiki/Q944
concepts[16].display_name	Quantum mechanics
keywords[0].id	https://openalex.org/keywords/materials-science
keywords[0].score	0.7407969236373901
keywords[0].display_name	Materials science
keywords[1].id	https://openalex.org/keywords/optoelectronics
keywords[1].score	0.689082145690918
keywords[1].display_name	Optoelectronics
keywords[2].id	https://openalex.org/keywords/time-dependent-gate-oxide-breakdown
keywords[2].score	0.6455869674682617
keywords[2].display_name	Time-dependent gate oxide breakdown
keywords[3].id	https://openalex.org/keywords/breakdown-voltage
keywords[3].score	0.6439861059188843
keywords[3].display_name	Breakdown voltage
keywords[4].id	https://openalex.org/keywords/high-electron-mobility-transistor
keywords[4].score	0.610139787197113
keywords[4].display_name	High-electron-mobility transistor
keywords[5].id	https://openalex.org/keywords/gate-oxide
keywords[5].score	0.5254865288734436
keywords[5].display_name	Gate oxide
keywords[6].id	https://openalex.org/keywords/doping
keywords[6].score	0.5018429756164551
keywords[6].display_name	Doping
keywords[7].id	https://openalex.org/keywords/reliability
keywords[7].score	0.5016632080078125
keywords[7].display_name	Reliability (semiconductor)
keywords[8].id	https://openalex.org/keywords/schottky-barrier
keywords[8].score	0.4711533784866333
keywords[8].display_name	Schottky barrier
keywords[9].id	https://openalex.org/keywords/voltage
keywords[9].score	0.3927225172519684
keywords[9].display_name	Voltage
keywords[10].id	https://openalex.org/keywords/electrical-engineering
keywords[10].score	0.3886876106262207
keywords[10].display_name	Electrical engineering
keywords[11].id	https://openalex.org/keywords/transistor
keywords[11].score	0.2856126129627228
keywords[11].display_name	Transistor
keywords[12].id	https://openalex.org/keywords/engineering
keywords[12].score	0.11563456058502197
keywords[12].display_name	Engineering
keywords[13].id	https://openalex.org/keywords/power
keywords[13].score	0.09329771995544434
keywords[13].display_name	Power (physics)
keywords[14].id	https://openalex.org/keywords/physics
keywords[14].score	0.0837298035621643
keywords[14].display_name	Physics
language	en
locations[0].id	pmh:oai:arXiv.org:2106.01495
locations[0].is_oa	True
locations[0].source.id	https://openalex.org/S4306400194
locations[0].source.issn
locations[0].source.type	repository
locations[0].source.is_oa	True
locations[0].source.issn_l
locations[0].source.is_core	False
locations[0].source.is_in_doaj	False
locations[0].source.display_name	arXiv (Cornell University)
locations[0].source.host_organization	https://openalex.org/I205783295
locations[0].source.host_organization_name	Cornell University
locations[0].source.host_organization_lineage	https://openalex.org/I205783295
locations[0].license
locations[0].pdf_url	https://arxiv.org/pdf/2106.01495
locations[0].version	submittedVersion
locations[0].raw_type	text
locations[0].license_id
locations[0].is_accepted	False
locations[0].is_published	False
locations[0].raw_source_name
locations[0].landing_page_url	http://arxiv.org/abs/2106.01495
locations[1].id	doi:10.48550/arxiv.2106.01495
locations[1].is_oa	True
locations[1].source.id	https://openalex.org/S4306400194
locations[1].source.issn
locations[1].source.type	repository
locations[1].source.is_oa	True
locations[1].source.issn_l
locations[1].source.is_core	False
locations[1].source.is_in_doaj	False
locations[1].source.display_name	arXiv (Cornell University)
locations[1].source.host_organization	https://openalex.org/I205783295
locations[1].source.host_organization_name	Cornell University
locations[1].source.host_organization_lineage	https://openalex.org/I205783295
locations[1].license	public-domain
locations[1].pdf_url
locations[1].version
locations[1].raw_type	article
locations[1].license_id	https://openalex.org/licenses/public-domain
locations[1].is_accepted	False
locations[1].is_published
locations[1].raw_source_name
locations[1].landing_page_url	https://doi.org/10.48550/arxiv.2106.01495
indexed_in	arxiv, datacite
authorships[0].author.id	https://openalex.org/A5063750111
authorships[0].author.orcid	https://orcid.org/0000-0002-6414-0462
authorships[0].author.display_name	Guangnan Zhou
authorships[0].author_position	first
authorships[0].raw_author_name	Guangnan Zhou
authorships[0].is_corresponding	False
authorships[1].author.id	https://openalex.org/A5008343751
authorships[1].author.orcid
authorships[1].author.display_name	Fanming Zeng
authorships[1].author_position	middle
authorships[1].raw_author_name	Fanming Zeng
authorships[1].is_corresponding	False
authorships[2].author.id	https://openalex.org/A5087498289
authorships[2].author.orcid
authorships[2].author.display_name	Rongyu Gao
authorships[2].author_position	middle
authorships[2].raw_author_name	Rongyu Gao
authorships[2].is_corresponding	False
authorships[3].author.id	https://openalex.org/A5100762532
authorships[3].author.orcid	https://orcid.org/0000-0003-0701-1418
authorships[3].author.display_name	Qing Wang
authorships[3].author_position	middle
authorships[3].raw_author_name	Qing Wang
authorships[3].is_corresponding	False
authorships[4].author.id	https://openalex.org/A5052444057
authorships[4].author.orcid	https://orcid.org/0000-0001-6303-015X
authorships[4].author.display_name	Kai Cheng
authorships[4].author_position	middle
authorships[4].raw_author_name	Kai Cheng
authorships[4].is_corresponding	False
authorships[5].author.id	https://openalex.org/A5083436523
authorships[5].author.orcid	https://orcid.org/0000-0002-5290-4963
authorships[5].author.display_name	Guangrui Xia
authorships[5].author_position	middle
authorships[5].raw_author_name	Guangrui Xia
authorships[5].is_corresponding	False
authorships[6].author.id	https://openalex.org/A5101765075
authorships[6].author.orcid	https://orcid.org/0000-0002-5756-868X
authorships[6].author.display_name	Hongyu Yu
authorships[6].author_position	last
authorships[6].raw_author_name	Hongyu Yu
authorships[6].is_corresponding	False
has_content.pdf	False
has_content.grobid_xml	False
is_paratext	False
open_access.is_oa	True
open_access.oa_url	https://arxiv.org/pdf/2106.01495
open_access.oa_status	green
open_access.any_repository_has_fulltext	False
created_date	2025-10-10T00:00:00
display_name	Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
has_fulltext	False
is_retracted	False
updated_date	2025-11-06T06:51:31.235846
primary_topic.id	https://openalex.org/T10099
primary_topic.field.id	https://openalex.org/fields/31
primary_topic.field.display_name	Physics and Astronomy
primary_topic.score	1.0
primary_topic.domain.id	https://openalex.org/domains/3
primary_topic.domain.display_name	Physical Sciences
primary_topic.subfield.id	https://openalex.org/subfields/3104
primary_topic.subfield.display_name	Condensed Matter Physics
primary_topic.display_name	GaN-based semiconductor devices and materials
related_works	https://openalex.org/W2099624314, https://openalex.org/W2539595190, https://openalex.org/W2106473374, https://openalex.org/W2250343992, https://openalex.org/W3160961382, https://openalex.org/W3043337507, https://openalex.org/W3038423925, https://openalex.org/W2077805257, https://openalex.org/W4229016249, https://openalex.org/W2102648694
cited_by_count	1
counts_by_year[0].year	2023
counts_by_year[0].cited_by_count	1
locations_count	2
best_oa_location.id	pmh:oai:arXiv.org:2106.01495
best_oa_location.is_oa	True
best_oa_location.source.id	https://openalex.org/S4306400194
best_oa_location.source.issn
best_oa_location.source.type	repository
best_oa_location.source.is_oa	True
best_oa_location.source.issn_l
best_oa_location.source.is_core	False
best_oa_location.source.is_in_doaj	False
best_oa_location.source.display_name	arXiv (Cornell University)
best_oa_location.source.host_organization	https://openalex.org/I205783295
best_oa_location.source.host_organization_name	Cornell University
best_oa_location.source.host_organization_lineage	https://openalex.org/I205783295
best_oa_location.license
best_oa_location.pdf_url	https://arxiv.org/pdf/2106.01495
best_oa_location.version	submittedVersion
best_oa_location.raw_type	text
best_oa_location.license_id
best_oa_location.is_accepted	False
best_oa_location.is_published	False
best_oa_location.raw_source_name
best_oa_location.landing_page_url	http://arxiv.org/abs/2106.01495
primary_location.id	pmh:oai:arXiv.org:2106.01495
primary_location.is_oa	True
primary_location.source.id	https://openalex.org/S4306400194
primary_location.source.issn
primary_location.source.type	repository
primary_location.source.is_oa	True
primary_location.source.issn_l
primary_location.source.is_core	False
primary_location.source.is_in_doaj	False
primary_location.source.display_name	arXiv (Cornell University)
primary_location.source.host_organization	https://openalex.org/I205783295
primary_location.source.host_organization_name	Cornell University
primary_location.source.host_organization_lineage	https://openalex.org/I205783295
primary_location.license
primary_location.pdf_url	https://arxiv.org/pdf/2106.01495
primary_location.version	submittedVersion
primary_location.raw_type	text
primary_location.license_id
primary_location.is_accepted	False
primary_location.is_published	False
primary_location.raw_source_name
primary_location.landing_page_url	http://arxiv.org/abs/2106.01495
publication_date	2021-06-02
publication_year	2021
referenced_works	https://openalex.org/W2902654293, https://openalex.org/W2554381269, https://openalex.org/W2800507758, https://openalex.org/W1987837737, https://openalex.org/W2769895692, https://openalex.org/W2771021374, https://openalex.org/W2912852913, https://openalex.org/W2039633112, https://openalex.org/W2343327181, https://openalex.org/W2889016987, https://openalex.org/W2806405796, https://openalex.org/W2945368664, https://openalex.org/W3103000680, https://openalex.org/W2080526069, https://openalex.org/W2305626453, https://openalex.org/W1979488505, https://openalex.org/W3074456051, https://openalex.org/W2593495332, https://openalex.org/W2973395542, https://openalex.org/W3099562360, https://openalex.org/W2104569049, https://openalex.org/W3132165980, https://openalex.org/W2084688533
referenced_works_count	23
abstract_inverted_index.V	56, 82
abstract_inverted_index.a	2, 84, 88
abstract_inverted_index.1%	89
abstract_inverted_index.By	31
abstract_inverted_index.We	0
abstract_inverted_index.an	33
abstract_inverted_index.at	23
abstract_inverted_index.by	16
abstract_inverted_index.in	19
abstract_inverted_index.is	43, 50
abstract_inverted_index.of	101
abstract_inverted_index.on	60
abstract_inverted_index.to	54, 80
abstract_inverted_index.6.2	79
abstract_inverted_index.GaN	37
abstract_inverted_index.and	45, 64
abstract_inverted_index.any	107
abstract_inverted_index.for	83
abstract_inverted_index.the	13, 25, 29, 39, 46, 61, 72, 97, 102
abstract_inverted_index.10.6	53, 81
abstract_inverted_index.14.6	55
abstract_inverted_index.HEMT	6
abstract_inverted_index.This	93
abstract_inverted_index.aims	22
abstract_inverted_index.from	52, 78
abstract_inverted_index.gate	5, 40, 47, 67, 74, 90, 104
abstract_inverted_index.hole	10
abstract_inverted_index.near	12
abstract_inverted_index.that	71
abstract_inverted_index.with	8, 57, 87
abstract_inverted_index.HEMTs	105
abstract_inverted_index.doped	36
abstract_inverted_index.drive	75
abstract_inverted_index.field	27
abstract_inverted_index.gate.	30
abstract_inverted_index.novel	3
abstract_inverted_index.other	108
abstract_inverted_index.p-GaN	4, 103
abstract_inverted_index.rate.	92
abstract_inverted_index.which	21
abstract_inverted_index.MOCVD,	20
abstract_inverted_index.across	28
abstract_inverted_index.doping	17
abstract_inverted_index.layer,	38
abstract_inverted_index.margin	100
abstract_inverted_index.method	94
abstract_inverted_index.reveal	70
abstract_inverted_index.steps.	111
abstract_inverted_index.10-year	85
abstract_inverted_index.boosted	51
abstract_inverted_index.current	42
abstract_inverted_index.expands	96
abstract_inverted_index.failure	91
abstract_inverted_index.leakage	41
abstract_inverted_index.maximum	73
abstract_inverted_index.present	1
abstract_inverted_index.process	110
abstract_inverted_index.reduced	9
abstract_inverted_index.voltage	49, 63, 76, 99
abstract_inverted_index.without	106
abstract_inverted_index.Schottky	14
abstract_inverted_index.electric	26
abstract_inverted_index.lifetime	86
abstract_inverted_index.lowering	24
abstract_inverted_index.breakdown	48, 68
abstract_inverted_index.employing	32
abstract_inverted_index.increases	77
abstract_inverted_index.influence	59
abstract_inverted_index.interface	15
abstract_inverted_index.operating	98
abstract_inverted_index.structure	7
abstract_inverted_index.threshold	62
abstract_inverted_index.additional	34, 109
abstract_inverted_index.negligible	58
abstract_inverted_index.suppressed	44
abstract_inverted_index.effectively	95
abstract_inverted_index.engineering	18
abstract_inverted_index.measurements	69
abstract_inverted_index.concentration	11
abstract_inverted_index.Time-dependent	66
abstract_inverted_index.on-resistance.	65
abstract_inverted_index.unintentionally	35
cited_by_percentile_year
countries_distinct_count	0
institutions_distinct_count	7
sustainable_development_goals[0].id	https://metadata.un.org/sdg/7
sustainable_development_goals[0].score	0.4699999988079071
sustainable_development_goals[0].display_name	Affordable and clean energy
citation_normalized_percentile