Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors Article Swipe
Peng Cui
,
Yuanjie Lv
,
Huan Liu
,
Aijie Cheng
,
Fu Chen
,
Zhaojun Lin
·
YOU?
·
· 2018
· Open Access
·
· DOI: https://doi.org/10.1038/s41598-018-19510-y
YOU?
·
· 2018
· Open Access
·
· DOI: https://doi.org/10.1038/s41598-018-19510-y
The single-tone power of the AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths was measured. A distinct improvement in device linearity was observed in the sample with a larger gate width. The analysis of the variation of the parasitic source access resistance showed that, as the gate bias is increased, the polarization Coulomb field scattering can offset the increased polar optical phonon scattering and improve the device linearity. This approach is shown to be effective in improving the device linearity of AlGaN/GaN HFETs.
Related Topics
Concepts
Linearity
Heterojunction
Materials science
Optoelectronics
Scattering
Polarization (electrochemistry)
Phonon scattering
Transistor
Field-effect transistor
Offset (computer science)
Gallium nitride
Optics
Voltage
Physics
Nanotechnology
Chemistry
Computer science
Programming language
Physical chemistry
Layer (electronics)
Quantum mechanics
Metadata
- Type
- article
- Language
- en
- Landing Page
- https://doi.org/10.1038/s41598-018-19510-y
- https://www.nature.com/articles/s41598-018-19510-y.pdf
- OA Status
- gold
- Cited By
- 13
- References
- 21
- Related Works
- 10
- OpenAlex ID
- https://openalex.org/W2782893779
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W2782893779Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.1038/s41598-018-19510-yDigital Object Identifier
- Title
-
Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect TransistorsWork title
- Type
-
articleOpenAlex work type
- Language
-
enPrimary language
- Publication year
-
2018Year of publication
- Publication date
-
2018-01-11Full publication date if available
- Authors
-
Peng Cui, Yuanjie Lv, Huan Liu, Aijie Cheng, Fu Chen, Zhaojun LinList of authors in order
- Landing page
-
https://doi.org/10.1038/s41598-018-19510-yPublisher landing page
- PDF URL
-
https://www.nature.com/articles/s41598-018-19510-y.pdfDirect link to full text PDF
- Open access
-
YesWhether a free full text is available
- OA status
-
goldOpen access status per OpenAlex
- OA URL
-
https://www.nature.com/articles/s41598-018-19510-y.pdfDirect OA link when available
- Concepts
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Linearity, Heterojunction, Materials science, Optoelectronics, Scattering, Polarization (electrochemistry), Phonon scattering, Transistor, Field-effect transistor, Offset (computer science), Gallium nitride, Optics, Voltage, Physics, Nanotechnology, Chemistry, Computer science, Programming language, Physical chemistry, Layer (electronics), Quantum mechanicsTop concepts (fields/topics) attached by OpenAlex
- Cited by
-
13Total citation count in OpenAlex
- Citations by year (recent)
-
2024: 1, 2023: 3, 2022: 1, 2021: 4, 2020: 1Per-year citation counts (last 5 years)
- References (count)
-
21Number of works referenced by this work
- Related works (count)
-
10Other works algorithmically related by OpenAlex
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