Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate Dielectrics Article Swipe
Caleb Glaser
,
Brian Rummel
,
Joseph P. Klesko
,
Peter Dickens
,
Andrew Binder
,
Robert Kaplar
,
Daniel Feezell
·
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.2172/2430821
YOU?
·
· 2023
· Open Access
·
· DOI: https://doi.org/10.2172/2430821
Related Topics
Concepts
Metadata
- Type
- article
- Language
- en
- Landing Page
- http://doi.org/10.2172/2430821
- OA Status
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- Related Works
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- OpenAlex ID
- https://openalex.org/W4401780913
All OpenAlex metadata
Raw OpenAlex JSON
- OpenAlex ID
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https://openalex.org/W4401780913Canonical identifier for this work in OpenAlex
- DOI
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https://doi.org/10.2172/2430821Digital Object Identifier
- Title
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Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate DielectricsWork title
- Type
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articleOpenAlex work type
- Language
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enPrimary language
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2023Year of publication
- Publication date
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2023-06-01Full publication date if available
- Authors
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Caleb Glaser, Brian Rummel, Joseph P. Klesko, Peter Dickens, Andrew Binder, Robert Kaplar, Daniel FeezellList of authors in order
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https://doi.org/10.2172/2430821Publisher landing page
- Open access
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YesWhether a free full text is available
- OA status
-
greenOpen access status per OpenAlex
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https://www.osti.gov/biblio/2430821Direct OA link when available
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Atomic layer deposition, Materials science, Optoelectronics, Dielectric, Layer (electronics), Wide-bandgap semiconductor, Deposition (geology), Gallium nitride, Electronic engineering, Nanotechnology, Engineering, Sediment, Biology, PaleontologyTop concepts (fields/topics) attached by OpenAlex
- Cited by
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0Total citation count in OpenAlex
- Related works (count)
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10Other works algorithmically related by OpenAlex
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