In beam performances of the MIMOSIS-2.1 CMOS Monolithic Active Pixel Sensor Article Swipe

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CMOS Reticle Large Hadron Collider CMOS sensor Detector Chip Beam (structure) Electronic circuit Pixel Optoelectronics Optics Materials science Physics Computer science Electrical engineering Wafer Nuclear physics Engineering Telecommunications

M. Deveaux , Ali-Murteza Altingun , Julio Andary , Benedict Arnoldi-Meadows , J. Baudot , G. Bertolone , Auguste Besson , N. Bialas , C. Braun , Roma Bugiel , G. Claus , C. Colledani , Hasan Darwish , Andrei Dorokhov , Guy Dozière , Ziad El Bitar , I. Fröhlich , M. Goffe , B. Gutsche , Abdelkader Himmi , C. Hu , Kimmo Jaaskelainen , Oliver Keller , Michal Koziel , Franz Matejcek , Jan Michel , Frédéric Morel , C. Müntz , Hung Viet Pham , Christian Joachim Schmidt , Stefan Schreiber , M. Specht , J. Stroth , Eva-dhidho Taka , Isabelle Valin , Roland Weirich , Yüe Zhao , M. Winter ·

YOU? · · 2025 · Open Access · · DOI: https://doi.org/10.1088/1748-0221/20/07/c07056 · OA: W4413060924

MIMOSIS is a CMOS Monolithic Active Pixel Sensor developed to equip the Micro Vertex Detector of the Compressed Baryonic Matter (CBM) experiment at FAIR/GSI. The sensor will combine an excellent spatial precision of 5 µm with a time resolution of ∼5 µs and provide a peak hit rate capability of ∼ 80 MHz/cm 2 . To fulfill its task, MIMOSIS will have to withstand ionising radiation doses of ∼ 5 MRad and fluences of ∼ 7 × 10 13 n eq /cm 2 . This paper introduces the reticle size full feature sensor prototype MIMOSIS-2.1, which was improved with respect to earlier prototypes by adding on-chip grouping circuits and by improving the analog power grid. Moreover, it features for a first time a 50 μm epitaxial layer, which is found to improve the performances of the non-irradiated device significantly. We discuss the in beam sensor performances as measured during beam tests at the CERN-SPS.