Influence of Neutron Irradiation on the Generation of Charge Carriers in Heated Silicon-Germanium Film Structures for Thermal Energy Converters Article Swipe

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Silicon Germanium Materials science Optoelectronics Dopant Irradiation Charge carrier Impurity Carrier lifetime Converters Neutron Semiconductor Thermal Doping Voltage Electrical engineering Chemistry Nuclear physics Physics Organic chemistry Meteorology Engineering

B. M. Abdurakhmanov , M. M. Adilov , Sherzodbek Kuchkanov , Sergei Maksimov , Sherzod Makhmudov , A. S. Doroshkevich , Zhanna V. Mezentseva , Alisa A. Tatarinova , Sergiy Lyubchyk , Andriy Lyubchyk , Dan Chicea , M.N. Mirzayev , Х. Б. Ашуров ·

YOU? · · 2023 · Open Access · · DOI: https://doi.org/10.20944/preprints202310.0654.v1 · OA: W4387650627

The effect of neutron irradiation of Si-Ge/Si film structures obtained by gas-phase epitaxy on the processes of charge carrier generation and the magnitude of the dark short-circuit current and open-circuit voltage caused by it is studied, it is shown that their magnitude practically does not change with time. The results obtained indicate that all types of structural defects, both associated with dopant impurities and radiation exposure, contribute to the generation of charge carriers in heated silicon structures with the participation of deep energy levels, which indicates the applicability of neutron processing of silicon materials to create thermal energy converters, operating at high temperatures.